IRF7805PbF HEXFET(R) Chip-Set for DC-DC Converters N Channel Application Specific MOSFETs Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses Lead-Free A A D S 1 8 S 2 7 S 3 6 D G 4 5 D D SO-8 IRF7805PbF Top View Devices Features Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make this device ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. IRF7805PbF VDSS 30V RDS(on) 11m Qg 31nC QSW 11.5nC QOSS 36nC The IRF7805PbF offers maximum efficiency for mobile CPU core DC-DC converters. G Gate D Drain S Source Standard Pack Base part number Package Type IRF7805PbF SO-8 Symbol Form Quantity Tape and Reel 4000 Orderable Part Number IRF7805PbF Parameter Max. VDS Drain-Source Voltage 30 VGS Gate-to-Source Voltage 12 ID @ TA = 25C Continuous Drain Current, VGS @ 10V 13 ID @ TA = 70C IDM PD @TA = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 10 100 2.5 PD @TA = 70C Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range TJ TSTG Thermal Resistance Symbol RJL RJA 1 Parameter Junction-to-Drain Lead Junction-to-Ambient Units V A 1.6 0.02 -55 to + 150 W W/C C Typ. Max. Units --- --- 20 50 C/W 2016-8-23 IRF7805PbF Static @ TJ = 25C (unless otherwise specified) V(BR)DSS RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 30 --- 1.0 --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 9.2 11 mVGS = 4.5V, ID = 7.0A --- 3.0 V VDS = VGS, ID = 250A --- 70 VDS = 30V, VGS = 0V A VDS = 24V, VGS = 0V --- 10 --- 150 VDS = 24V,VGS = 0V,TJ = 100C --- 100 VGS = 12V nA --- -100 VGS = -12V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Total Gate Charge Qg Qgs1 Pre -Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time Rise Time tr td(off) Turn-Off Delay Time tf Fall Time Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Charge Qrr --- --- --- --- --- --- 0.5 --- --- --- --- 22 3.7 1.4 6.8 8.2 30 --- 16 20 38 16 31 --- --- --- 11.5 36 1.7 --- --- --- --- Min. Typ. Max. Units --- --- 2.5 --- --- 106 --- --- 1.2 --- 88 --- VGS = 5.0V nC VDS = 16V ID = 7.0A nC VDS = 16V, VGS = 0V VDD = 16V,VGS = 4.5V ID = 7.0A ns RG = 2 Resistive Load A V nC Qrr Reverse Recovery Charge --- 55 --- Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C,IS = 7.0A,VGS = 0V di/dt = 700A/s VDS =16V, VGS= 0V, IS= 7.0A di/dt = 700A/s (with 10BQ040) VDS =16V, VGS= 0V, IS= 7.0A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. When mounted on 1" in square copper board, t < 10 sec. Typ = measured - QOSS R is measured at TJ of approximately 90C. Devices are 100% tested to these parameters. 2 2016-8-23 IRF7805PbF Fig. 2 Typical Gate Charge vs. Gate-to-Source Voltage Fig. 1 Normalized On-Resistance vs. Temperature ISD , Reverse Drain Current (A) 10 TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 VSD,Source-to-Drain Voltage (V) Fig. 3 Typical Rds(on) vs. Gate-to-Source Voltage Fig. 4 Typical Source-Drain Diode Forward Voltage Fig 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 3 2016-8-23 IRF7805PbF SO-8 Package Outline (Dimensions are shown in millimeters (inches) D D IM B 8 6 7 6 M IN A .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B ASIC 1.27 B ASIC e1 5 H E 1 6X 2 3 0.25 [ .010] 4 A e e1 0.25 [ .010] A1 C A M AX .025 B ASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0 8 0 8 K x 45 A C 8X b M ILLIM ETERS M AX 5 A IN C H ES M IN y 0.10 [ .004] 8X L 8X c 7 B F O O T P R IN T N O TE S : 1. D IM E N S IO N IN G & T O L E R A N C IN G P E R A S M E Y 1 4 . 5 M - 1 9 9 4 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R 3. D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S [ IN C H E S ] . 4. O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S - 0 1 2 A A . 5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .1 5 [ . 0 0 6 ] . 6 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S . M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 [ . 0 1 0 ] . 7 D IM E N S IO N IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S TR A TE . 8 X 0 .7 2 [ .0 2 8 ] 6 .4 6 [ .2 5 5 ] 3 X 1 .2 7 [ .0 5 0 ] 8 X 1 .7 8 [ .0 7 0 ] SO-8 Part Marking Information E X A M P L E : T H IS IS A N IR F 7 1 0 1 (M O S F E T ) IN T E R N A T IO N A L R E C T IF IE R LO G O XXXX F7101 D A T E C O D E (Y W W ) P = D E S IG N A T E S L E A D -F R E E P R O D U C T (O P T IO N A L ) Y = L A S T D IG IT O F T H E Y E A R W W = W EEK A = A S S E M B L Y S IT E C O D E LO T C O D E PART N U M BER 4 2016-8-23 IRF7805PbF SO-8 Tape and Reel (Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 5 2016-8-23 IRF7805PbF Qualification Information Consumer Qualification Level Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D) SO-8 Yes RoHS Compliant Applicable version of JEDEC standard at the time of product release. Revision History Date 08/23/2016 Comments Changed datasheet with Infineon logo - all pages. Corrected typo Qoss from typ/max "3.0nC/3.6nC" to "30nC/36nC" on page 2. Added disclaimer on last page. Trademarks of Infineon Technologies AG HVICTM, IPMTM, PFCTM, AU-ConvertIRTM, AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, CoolDPTM, CoolGaNTM, COOLiRTM, CoolMOSTM, CoolSETTM, CoolSiCTM, DAVETM, DI-POLTM, DirectFETTM, DrBladeTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, GaNpowIRTM, HEXFETTM, HITFETTM, HybridPACKTM, iMOTIONTM, IRAMTM, ISOFACETM, IsoPACKTM, LEDrivIRTM, LITIXTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OPTIGATM, OptiMOSTM, ORIGATM, PowIRaudioTM, PowIRStageTM, PrimePACKTM, PrimeSTACKTM, PROFETTM, PRO-SILTM, RASICTM, REAL3TM, SmartLEWISTM, SOLID FLASHTM, SPOCTM, StrongIRFETTM, SupIRBuckTM, TEMPFETTM, TRENCHSTOPTM, TriCoreTM, UHVICTM, XHPTM, XMCTM Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2016-04-19 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2016 Infineon Technologies AG. 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