CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree's CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is matched to 50-ohms on the input and 50-ohms on the output. The CGHV35400 is based on Cree's high power density 50 V, 0.4 m GaN on silicon carbide (SiC) foundry process. The transistor is supplied in a ceramic/metal flange package, type 440217. PN: CGHV354 00F Package Type : 440225 Typical Performance Over 2.9-3.5 GHz (TC = 25C) of Demonstration Amplifier Parameter 2.9 GHz 3.2 GHz 3.5 GHz Units Output Power 500 535 480 W Gain 11.0 11.3 10.8 dB 74 69 64 % Drain Efficiency Note: Measured in the CGHV35400F-AMP application circuit, under 500 s pulse width, 10% duty cycle, PIN = 46 dBm. 20 Rev 5.0 - March 19 Features * 2.9 - 3.5 GHz Operation * 500 W Typical Output Power * 11 dB Power Gain * 70% Typical Drain Efficiency * 50 Ohm Internally Matched * <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Pulse Width PW 500 s Duty Cycle DC 10 % Drain-Source Voltage VDSS 125 Volts 25C 25C Gate-to-Source Voltage VGS -10, +2 Volts Storage Temperature TSTG -65, +150 C Conditions Operating Junction Temperature TJ 225 C Maximum Forward Gate Current IGMAX 80 mA 25C Maximum Drain Current1 IDMAX 24 A 25C Soldering Temperature TS 245 C Screw Torque 40 in-oz Pulsed Thermal Resistance, Junction to Case RJC 0.22 C/W 100 sec, 10%, 85C , PDISS = 418 W Pulsed Thermal Resistance, Junction to Case RJC 0.30 C/W 500 sec, 10%, 85C, PDISS = 418 W TC -40, +125 C 2 Case Operating Temperature Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA Gate Quiescent Voltage VGS(Q) - -2.7 - VDC VDS = 50 V, ID = 0.5 A Saturated Drain Current IDS 62.7 75.5 - A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBR 150 - - VDC VGS = -8 V, ID = 83.6 mA DC Characteristics1 (TC = 25C) 2 Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV35400F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Electrical Characteristics Continued... Characteristics Symbol Min. Typ. Max. Units Conditions RF Characteristics (TC = 25C, F0 = 2.9 - 3.5 GHz unless otherwise noted) 3 Output Power at 2.9 GHz POUT1 445 500 - W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Output Power at 3.2 GHz POUT2 475 535 - W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Output Power at 3.5 GHz POUT3 410 480 - W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Gain at 2.9 GHz GP1 10.5 11 - dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Gain at 3.2 GHz GP2 10.75 11.3 - dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Gain at 3.5 GHz GP3 10.1 10.8 - dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 2.9 GHz DE1 60 70 - % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 3.2 GHz DE2 60 70 - % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Drain Efficiency at 3.5 GHz DE3 54 64 - % VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Small Signal Gain S21 10.5 12 - dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm Input Return Loss S11 - -8 -3.0 dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm Output Return Loss S22 - -8 -4.0 dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm D - -0.3 - dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm VSWR - 5:1 - Y Amplitude Droop Output Stress Match No damage at all phase angles, VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Pulsed Notes: 3 Measured in CGHV35400F-AMP. Pulse Width = 500 S, Duty Cycle = 10%. Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV35400F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 1. - CGHV35400F Typical Sparameters CGHV35400F Sparameters VDDVdd = 50 V, V, IDQIdq = 0.5 A mA = 50 = 500 20 15 Magnitude (dB) 10 5 0 -5 -10 S(2,1) S(1,1) S(2,2) -15 -20 2500 2700 2900 3100 3300 Frequency (MHz) 3500 3700 3900 Figure 2. CGHV35400F - CGHV35400F POUT Drain EffFrequency vs Frequency at T=CASE 25C Pout andand Drain Eff vs at Tcase 25 = deg C Vdd = 50 V, Idq = 0.5 A, Pin = 46 dBm, Pulse Width = 500 usec, Duty Cycle VDD = 50 V, IDQ = 0.5 A, PIN = 46 dBm, Pulse Width = 500s, Duty Cycle = 10 =%10 100 550 90 500 80 450 70 400 60 Output Power 350 Drain Efficiency (%) Output Power % 600 50 Drain Efficiency 300 2.7 2.8 2.9 3.0 3.1 3.2 3.3 Frequency (GHz) 3.4 3.5 Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV35400F Rev 5.0 3.6 3.7 40 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Output Power Power vs Inputvs Power Figure 3.CGHV35400F - CGHV35400F Output Input Power Vdd 50=V,500 Idq =mA, 500 Pulse mA, Pulse Width = 500s, us,Duty Duty Cycle %,%, Tcase = 25= 25 C VDD = 50 V, =IDQ Width = 500 Cycle==1010 Tcase C 60 55 2.9 GHz Output Power (dBm) 50 3.2 GHz 3.5 GHz 45 40 35 30 25 20 5 10 15 20 25 30 Input Power (dBm) 35 40 45 50 Figure 4. - CGHV35400F Drain Efficiency & Gain vs Input Power CGHV35400F Drain Efficiency & Gain vs Input Power VDD = 50 V, =IDQ50=V,500 Pulse WidthWidth = 500= s, Cycle = 10 %, %, Tcase = 25 C Vdd IdqmA, = 500 mA, Pulse 500Duty us, Duty Cycle = 10 Tcase = 25 80 16 70 14 60 12 50 10 Drain Efficiency - 2.9 GHz Drain Efficiency - 3.2 GHz Drain Efficiency - 3.5 GHz 40 8 Gain - 2.9 GHz Gain - 3.2 GHz 30 6 Gain - 3.5 GHz 20 4 10 2 0 5 10 15 20 25 30 Input Power (dBm) 35 40 Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV35400F Rev 5.0 Gain (dB) Drain Efficiency (%) C 45 50 0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV35400F-AMP Application Circuit Bill of Materials Designator Description Qty R1 RES, 511, OHM, +/- 1%, 1/16W, 0603 R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1 1 C1 CAP, 6.8pF, +/-0.25%, 250V, 0603 1 C2, C7, C8 CAP, 10.0pF, +/-1%, 250V, 0805 3 C3 CAP, 10.0pF, +/-5%, 250V, 0603 1 CAP, 470pF, 5%, 100V, 0603, X 2 C4, C9 C5 CAP, 33000 pF, 0805, 100V, X7R 1 C6 CAP, 10uF 16V TANTALUM 1 C10 CAP, 1.0uF, 100V, 10%, X7R, 1210 1 C11 CAP, 33uF, 20%, G CASE 1 C12 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1 CONN, SMA, PANEL MOUNT JACK, FL 2 HEADER, RT>PLZ, 0.1CEN LK 9POS 1 J4 CONNECTOR; SMB, Straight, JACK, SMD 1 W1 CABLE, 18 AWG, 4.2 1 PCB, RO4350, 2.5 X 4.0 X 0.030 1 CGHV35400F 1 J1,J2 J3 Q1 CGHV35400F Power Dissipation De-rating Curve CGHV35400F Transient Power Dissipation De-Rating Curve 450 400 Power Dissipation (W) 350 Note 1 300 250 200 150 100 100 us 10 % 500 us 10 % 50 0 0 25 50 75 100 125 150 175 Case Temperature (C) Maximum Maximum Case Temperature (C) 200 225 250 Note 1. Area exceeds Maximum Case Temperature (See Page 2). Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV35400F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV35400F-AMP Application Circuit Outline CGHV35400F-AMP Application Circuit Schematic Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV35400F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV35400F (Package Type -- 440225) Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV35400F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV35400F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 3.5 GHz 400 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV35400F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV35400F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV35400F-TB CGHV35400F-AMP Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV35400F Rev 5.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. "Typical" parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer's technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Copyright (c) 2013-2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV35400F Rev 5.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf