CGHV35400F-TB - CREE - Datasheet.Live

Subject to change without notice.

www.cree.com/rf

CGHV35400F

400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed specically with high efciency, high gain and wide bandwidth capabilities,

which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplier applications.

The transistor is matched to 50-ohms on the input and 50-ohms on the output. The

CGHV35400 is based on Cree’s high power density 50 V, 0.4 µm GaN on silicon carbide

(SiC) foundry process. The transistor is supplied in a ceramic/metal ange package, type

440217.

Rev 5.0 - March 2019

Features

• 2.9 - 3.5 GHz Operation

• 500 W Typical Output Power

• 11 dB Power Gain

• 70% Typical Drain Efciency

• 50 Ohm Internally Matched

• <0.3 dB Pulsed Amplitude Droop

Typical Performance Over 2.9-3.5 GHz (TC = 25˚C) of Demonstration Amplier

Parameter 2.9 GHz 3.2 GHz 3.5 GHz Units

Output Power 500 535 480 W

Gain 11.0 11.3 10.8 dB

Drain Efciency 74 69 64 %

Note:

Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm.

PN: CGHV35400F

Package Type: 440225

2CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Absolute Maximum Ratings (not simultaneous)

Parameter Symbol Rating Units Conditions

Pulse Width PW 500 µs

Duty Cycle DC 10 %

Drain-Source Voltage VDSS 125 Volts 25˚C

Gate-to-Source Voltage VGS -10, +2 Volts 25˚C

Storage Temperature TSTG -65, +150 ˚C

Operating Junction Temperature TJ225 ˚C

Maximum Forward Gate Current IGMAX 80 mA 25˚C

Maximum Drain Current1IDMAX 24 A 25˚C

Soldering Temperature2TS245 ˚C

Screw Torque τ40 in-oz

Pulsed Thermal Resistance, Junction to Case RθJC 0.22 ˚C/W 100 μsec, 10%, 85˚C , PDISS = 418 W

Pulsed Thermal Resistance, Junction to Case RθJC 0.30 ˚C/W 500 μsec, 10%, 85˚C, PDISS = 418 W

Case Operating Temperature TC-40, +125 ˚C

Notes:

1 Current limit for long term, reliable operation

2 Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library

Electrical Characteristics

Characteristics Symbol Min. Typ. Max. Units Conditions

DC Characteristics1 (TC = 25˚C)

Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 83.6 mA

Gate Quiescent Voltage VGS(Q) –-2.7 – VDC VDS = 50 V, ID = 0.5 A

Saturated Drain Current2IDS 62.7 75.5 –AVDS = 6.0 V, VGS = 2.0 V

Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 83.6 mA

Notes:

1 Measured on wafer prior to packaging.

2 Scaled from PCM data.

3CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Electrical Characteristics Continued...

Characteristics Symbol Min. Typ. Max. Units Conditions

RF Characteristics3 (TC = 25˚C, F0 = 2.9 - 3.5 GHz unless otherwise noted)

Output Power at 2.9 GHz POUT1 445 500 – W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Output Power at 3.2 GHz POUT2 475 535 – W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Output Power at 3.5 GHz POUT3 410 480 – W VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Gain at 2.9 GHz GP1 10.5 11 –dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Gain at 3.2 GHz GP2 10.75 11.3 –dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Gain at 3.5 GHz GP3 10.1 10.8 –dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Drain Efciency at 2.9 GHz DE1 60 70 –%VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Drain Efciency at 3.2 GHz DE2 60 70 –%VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Drain Efciency at 3.5 GHz DE3 54 64 – %VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Small Signal Gain S21 10.5 12 –dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm

Input Return Loss S11 –-8 -3.0 dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm

Output Return Loss S22 –-8 -4.0 dB VDD = 50 V, IDQ = 500 mA, PIN = -10 dBm

Amplitude Droop D –-0.3 –dB VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm

Output Stress Match VSWR –5:1 –YNo damage at all phase angles,

VDD = 50 V, IDQ = 500 mA, PIN = 46 dBm Pulsed

Notes:

3 Measured in CGHV35400F-AMP. Pulse Width = 500 μS, Duty Cycle = 10%.

Electrostatic Discharge (ESD) Classications

Parameter Symbol Class Test Methodology

Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D

Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C

4CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Typical Performance

Figure 1. - CGHV35400F Typical Sparameters

VDD = 50 V, IDQ = 0.5 A

Figure 2. - CGHV35400F POUT and Drain Eff vs Frequency at TCASE = 25˚C

VDD = 50 V, IDQ = 0.5 A, PIN = 46 dBm, Pulse Width = 500µs, Duty Cycle = 10 %

Magnitude (dB)

CGHV35400F Sparameters

Vdd = 50 V, Idq = 500 mA

-20

-15

-10

-5

2500 2700 2900 3100 3300 3500 3700 3900

Magnitude (dB)

Frequency (MHz)

S(2,1)

S(1,1)

S(2,2)

100

450

500

550

600

Drain Efficiency (%)

Output Power

CGHV35400F Pout and Drain Eff vs Frequency at Tcase = 25 deg C

Vdd = 50 V, Idq = 0.5 A, Pin = 46 dBm, Pulse Width = 500 usec, Duty Cycle = 10

300

350

400

2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7

Drain Efficiency (%)

Output Power

Frequency (GHz)

Output Power

Drain Efficiency

5CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Typical Performance

Figure 3. - CGHV35400F Output Power vs Input Power

VDD = 50 V, IDQ = 500 mA, Pulse Width = 500 µs, Duty Cycle = 10 %, Tcase = 25 °C

Figure 4. - CGHV35400F Drain Efciency & Gain vs Input Power

VDD = 50 V, IDQ = 500 mA, Pulse Width = 500 µs, Duty Cycle = 10 %, Tcase = 25 °C

Output Power (dBm)

CGHV35400F Output Power vs Input Power

Vdd = 50 V, Idq = 500 mA, Pulse Width = 500 us, Duty Cycle = 10 %, Tcase = 25

°C

2.9 GHz

3.2 GHz

3.5 GHz

5 10 15 20 25 30 35 40 45 50

Output Power (dBm)

Input Power (dBm)

Gain (dB)

Drain Efficiency (%)

CGHV35400F Drain Efficiency & Gain vs Input Power

Vdd = 50 V, Idq = 500 mA, Pulse Width = 500 us, Duty Cycle = 10 %, Tcase = 25

°C

Drain Efficiency - 2.9 GHz

Drain Efficiency - 3.2 GHz

Drain Efficiency - 3.5 GHz

Gain

GHz

5 10 15 20 25 30 35 40 45 50

Drain Efficiency (%)

Input Power (dBm)

Gain

GHz

Gain - 3.2 GHz

Gain - 3.5 GHz

6CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV35400F-AMP Application Circuit Bill of Materials

Designator Description Qty

R1 RES, 511, OHM, +/- 1%, 1/16W, 0603 1

R2 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 1

C1 CAP, 6.8pF, +/-0.25%, 250V, 0603 1

C2, C7, C8 CAP, 10.0pF, +/-1%, 250V, 0805 3

C3 CAP, 10.0pF, +/-5%, 250V, 0603 1

C4, C9 CAP, 470pF, 5%, 100V, 0603, X 2

C5 CAP, 33000 pF, 0805, 100V, X7R 1

C6 CAP, 10uF 16V TANTALUM 1

C10 CAP, 1.0uF, 100V, 10%, X7R, 1210 1

C11 CAP, 33uF, 20%, G CASE 1

C12 CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC 1

J1,J2 CONN, SMA, PANEL MOUNT JACK, FL 2

J3 HEADER, RT>PLZ, 0.1CEN LK 9POS 1

J4 CONNECTOR; SMB, Straight, JACK, SMD 1

W1 CABLE, 18 AWG, 4.2 1

- PCB, RO4350, 2.5 X 4.0 X 0.030 1

Q1 CGHV35400F 1

CGHV35400F Power Dissipation De-rating Curve

Maximum Case Temperature (°C)

Note 1. Area exceeds Maximum Case Temperature (See Page 2).

200

250

300

350

400

450

Power Dissipation (W)

CGHV35400F Transient Power Dissipation De-Rating Curve

100

150

0 25 50 75 100 125 150 175 200 225 250

Power Dissipation (W)

Maximum Case Temperature (°C)

100 us 10 %

500 us 10 %

Note 1

7CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

CGHV35400F-AMP Application Circuit Outline

CGHV35400F-AMP Application Circuit Schematic

8CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Product Dimensions CGHV35400F (Package Type — 440225)

9CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Part Number System

Parameter Value Units

Upper Frequency13.5 GHz

Power Output 400 W

Package Flange -

Table 1.

Note1: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code Code Value

B 1

E 4

F 5

G 6

K 9

Examples: 1A = 10.0 GHz

2H = 27.0 GHz

Table 2.

Package

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

CGHV35400F

10 CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Product Ordering Information

Order Number Description Unit of Measure Image

CGHV35400F GaN HEMT Each

CGHV35400F-TB Test board without GaN HEMT Each

CGHV35400F-AMP Test board with GaN HEMT installed Each

11 CGHV35400F Rev 5.0

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

www.cree.com/rf

registered trademarks of Cree, Inc.

Disclaimer

Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/rf

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing & Sales

Cree, RF Components

1.919.407.7816