April 10, 2008
LM2738
550kHz/1.6MHz 1.5A Step-Down DC-DC Switching
Regulator
General Description
The LM2738 regulator is a monolithic, high frequency, PWM
step-down DC/DC converter in an 8-pin LLP or 8-pin eMSOP
package. It provides all the active functions for local DC/DC
conversion with fast transient response and accurate regula-
tion in the smallest possible PCB area.
With a minimum of external components, the LM2738 is easy
to use. The ability to drive 1.5A loads with an internal
250m NMOS switch using state-of-the-art 0.5µm BiCMOS
technology results in the best power density available.
Switching frequency is internally set to 550kHz (LM2738Y) or
1.6MHz (LM2738X), allowing the use of extremely small sur-
face mount inductors and chip capacitors. Even though the
operating frequencies are very high, efficiencies up to 90%
are easy to achieve. External enable is included, featuring an
ultra-low stand-by current of 400nA. The LM2738 utilizes cur-
rent-mode control and internal compensation to provide high-
performance regulation over a wide range of operating
conditions. Additional features include internal soft-start cir-
cuitry to reduce in-rush current, cycle-by-cycle current limit,
thermal shutdown, and output over-voltage protection.
Features
Space Saving LLP-8 and eMSOP-8 package
3.0V to 20V input voltage range
0.8V to 18V output voltage range
1.5A output current
550kHz (LM2738Y) and 1.6MHz (LM2738X)
switching frequencies
250m NMOS switch
400nA shutdown current
0.8V, 2% internal voltage reference
Internal soft-start
Current-Mode, PWM operation
Thermal shutdown
Applications
Local Point of Load Regulation
Core Power in HDDs
Set-Top Boxes
Battery Powered Devices
USB Powered Devices
DSL Modems
Typical Application Circuit
30049101
Efficiency vs Load Current
VIN = 12V, VOUT = 3.3V
30049145
© 2008 National Semiconductor Corporation 300491 www.national.com
LM2738 550kHz/1.6MHz 1.5A Step-Down DC-DC Switching Regulator
Connection Diagrams
30049161
8-Pin LLP - TOP VIEW
NS Package Number SDA08A
30049163
8-Pin eMSOP - TOP VIEW
NS Package Number MUY08A
Ordering Information
Order Number Frequency
Option
Package Type NSC Package
Drawing
Package Marking Supplied As
LM2738XSD 1.6MHz
8-Lead LLP SDA08A
L237B 1000 Tape and Reel
LM2738XSDX 4500 Tape and Reel
LM2738YSD 0.55MHz L174B 1000 Tape and Reel
LM2738YSDX 4500 Tape and Reel
LM2738XMY 1.6MHz
8-Lead eMSOP MUY08A
STDB 1000 Tape and Reel
LM2738XMYX 3500 Tape and Reel
LM2738YMY 0.55MHz SJBB 1000 Tape and Reel
LM2738YMYX 3500 Tape and Reel
* Contact the local sales office for the lead-free package.
Pin Descriptions
Pin Name Function
1 BOOST Boost voltage that drives the internal NMOS control switch. A
bootstrap capacitor is connected between the BOOST and SW pins.
2VIN
Supply voltage for output power stage. Connect a bypass capacitor
to this pin. Must tie pins 2 and 3 together at package.
3VCC
Input supply voltage of the IC. Connect a bypass capacitor to this pin.
Must tie pin 2 and 3 together at the package.
4 EN Enable control input. Logic high enables operation. Do not allow this
pin to float or be greater than VIN + 0.3V.
5, 7 GND Signal and power ground pins. Place the bottom resistor of the
feedback network as close as possible to these pins.
6FB Feedback pin. Connect FB to the external resistor divider to set output
voltage.
8 SW Output switch. Connects to the inductor, catch diode, and bootstrap
capacitor.
DAP GND Signal and power ground. Must be connected to GND on the PCB.
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LM2738
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
VIN, VCC -0.5V to 24V
SW Voltage -0.5V to 24V
Boost Voltage -0.5V to 30V
Boost to SW Voltage -0.5V to 6.0V
FB Voltage -0.5V to 3.0V
EN Voltage -0.5V to (VIN + 0.3V)
Junction Temperature 150°C
ESD Susceptibility (Note 2) 2kV
Storage Temp. Range -65°C to 150°C
Soldering Information
Infrared/Convection Reflow (15sec) 220°C
Wave Soldering Lead Temp. (10sec) 260°C
Operating Ratings (Note 1)
VIN, VCC 3V to 20V
SW Voltage -0.5V to 20V
Boost Voltage -0.5V to 25.5V
Boost to SW Voltage 2.5V to 5.5V
Junction Temperature Range −40°C to +125°C
Thermal Resistance θJA for LLP/eMSOP(Note 3) 60°C/W
Thermal Shutdown (Note 3) 165°C
Electrical Characteristics
Specifications with standard typeface are for TJ = 25°C, and those in boldface type apply over the full Operating Temperature
Range (TJ = -40°C to 125°C). VIN = 12V, VBOOST - VSW = 5V unless otherwise specified. Datasheet min/max specification limits
are guaranteed by design, test, or statistical analysis.
Symbol Parameter Conditions Min
(Note 4)
Typ
(Note 5)
Max
(Note 4) Units
VFB Feedback Voltage 0.784 0.800 0.816 V
ΔVFBVIN Feedback Voltage Line Regulation VIN = 3V to 20V 0.02 % / V
IFB Feedback Input Bias Current Sink/Source 0.1 100 nA
UVLO
Undervoltage Lockout VIN Rising 2.7 2.90
V
Undervoltage Lockout VIN Falling 2.0 2.3
UVLO Hysteresis 0.4
FSW Switching Frequency LM2738X 1.28 1.6 1.92 MHz
LM2738Y 0.364 0.55 0.676
DMAX Maximum Duty Cycle LM2738X , Load=150mA 92 %
LM2738Y, Load=150mA 95
DMIN Minimum Duty Cycle LM2738X 7.5 %
LM2738Y 2
RDS(ON) Switch ON Resistance VBOOST - VSW = 3V,
Load=400mA
250 500 m
ICL Switch Current Limit VBOOST - VSW = 3V, VIN = 3V 2.0 2.9 A
IQ
Quiescent Current Switching 1.9 3mA
Non-Switching 1.9 mA
Quiescent Current (shutdown) VEN = 0V 400 nA
IBOOST Boost Pin Current LM2738X (27% Duty Cycle) 4.5 mA
LM2738Y (27% Duty Cycle) 2.5
VEN_TH
Shutdown Threshold Voltage VEN Falling - 0.4 V
Enable Threshold Voltage VEN Rising 1.4 -
IEN Enable Pin Current Sink/Source 10 nA
ISW Switch Leakage VIN = 20V 100 nA
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see Electrical Characteristics.
Note 2: Human body model, 1.5k in series with 100pF.
Note 3: Typical thermal shutdown will occur if the junction temperature exceeds 165°C. The maximum power dissipation is a function of TJ(MAX) , θJA and TA .
The maximum allowable power dissipation at any ambient temperature is PD = (TJ(MAX) – TA)/θJA . All numbers apply for packages soldered directly onto a 3” x
3” PC board with 2 oz. copper on 4 layers in still air in accordance to JEDEC standards. Thermal resistance varies greatly with layout, copper thicknes, number
of layers in PCB, power distribution, number of thermal vias, board size, ambient temperature, and air flow.
Note 4: Guaranteed to National’s Average Outgoing Quality Level (AOQL).
Note 5: Typicals represent the most likely parametric norm.
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LM2738
Typical Performance Characteristics All curves taken at VIN = 12V, VBOOST - VSW = 5V, and TA = 25°C,
unless specified otherwise.
Efficiency vs Load Current - "X" VOUT = 5V
30049197
Efficiency vs Load Current - "Y" VOUT = 5V
30049198
Efficiency vs Load Current - "X" VOUT = 3.3V
30049151
Efficiency vs Load Current - "Y" VOUT = 3.3V
30049152
Efficiency vs Load Current - "X" VOUT = 1.5V
30049199
Efficiency vs Load Current - "Y" VOUT = 1.5V
30049131
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LM2738
Typical Performance Characteristics All curves taken at VIN = 12V, VBOOST - VSW = 5V, and TA = 25°C,
unless specified otherwise.
Oscillator Frequency vs Temperature - "X"
30049127
Oscillator Frequency vs Temperature - "Y"
30049128
Current Limit vs Temperature
VIN = 5V
30049129
IQ Non-Switching vs Temperature
30049147
VFB vs Temperature
30049133
RDSON vs Temperature
30049130
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LM2738
Typical Performance Characteristics All curves taken at VIN = 12V, VBOOST - VSW = 5V, and TA = 25°C,
unless specified otherwise.
Line Regulation - "X" (VOUT = 1.5V, IOUT = 750mA)
30049156
Line Regulation - "Y" (VOUT = 1.5V, IOUT = 750mA)
30049154
Line Regulation - "X" (VOUT = 3.3V, IOUT = 750mA)
30049155
Line Regulation - "Y" (VOUT = 3.3V, IOUT = 750mA)
30049153
Load Regulation - "X" (VOUT = 1.5V)
30049176
Load Regulation - "Y" (VOUT = 1.5V)
30049175
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LM2738
Typical Performance Characteristics All curves taken at VIN = 12V, VBOOST - VSW = 5V, and TA = 25°C,
unless specified otherwise.
Load Regulation - "X" (VOUT = 3.3V)
30049177
Load Regulation - "Y" (VOUT = 3.3V)
30049178
IQ Switching vs Temperature
30049146
Load Transient - "X" (VOUT = 3.3V, VIN = 12V)
30049194
Startup - "X"
(VOUT = 3.3V, VIN = 12, IOUT=1.5A (Resistive Load))
30049190
In-Rush Current - "X"
(VOUT = 3.3V, VIN = 12V, IOUT=1.5A (Resistive Load) )
30049191
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LM2738
Block Diagram
30049106
FIGURE 1. Simplified Internal Block Diagram
Application Information
THEORY OF OPERATION
The LM2738 is a constant frequency PWM buck regulator IC
that delivers a 1.5A load current. The regulator has a preset
switching frequency of either 550kHz (LM2738Y) or 1.6MHz
(LM2738X). These high frequencies allow the LM2738 to op-
erate with small surface mount capacitors and inductors,
resulting in DC/DC converters that require a minimum amount
of board space. The LM2738 is internally compensated, so it
is simple to use, and requires few external components. The
LM2738 uses current-mode control to regulate the output
voltage.
The following operating description of the LM2738 will refer
to the Simplified Block Diagram (Figure 1) and to the wave-
forms in Figure 2. The LM2738 supplies a regulated output
voltage by switching the internal NMOS control switch at con-
stant frequency and variable duty cycle. A switching cycle
begins at the falling edge of the reset pulse generated by the
internal oscillator. When this pulse goes low, the output con-
trol logic turns on the internal NMOS control switch. During
this on-time, the SW pin voltage (VSW) swings up to approxi-
mately VIN, and the inductor current (IL) increases with a linear
slope. IL is measured by the current-sense amplifier, which
generates an output proportional to the switch current. The
sense signal is summed with the regulator’s corrective ramp
and compared to the error amplifier’s output, which is propor-
tional to the difference between the feedback voltage and
VREF. When the PWM comparator output goes high, the out-
put switch turns off until the next switching cycle begins.
During the switch off-time, inductor current discharges
through Schottky diode D1, which forces the SW pin to swing
below ground by the forward voltage (VD) of the catch diode.
The regulator loop adjusts the duty cycle (D) to maintain a
constant output voltage.
30049107
FIGURE 2. LM2738 Waveforms of SW Pin Voltage and
Inductor Current
BOOST FUNCTION
Capacitor CBOOST and diode D2 in Figure 3 are used to gen-
erate a voltage VBOOST. VBOOST - VSW is the gate drive voltage
to the internal NMOS control switch. To properly drive the in-
ternal NMOS switch during its on-time, VBOOST needs to be at
least 2.5V greater than VSW. It is recommended that VBOOST
be greater than 2.5V above VSW for best efficiency. VBOOST
VSW should not exceed the maximum operating limit of 5.5V.
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LM2738
5.5V > VBOOST – VSW > 2.5V for best performance.
When the LM2738 starts up, internal circuitry from the
BOOST pin supplies a maximum of 20mA to CBOOST. This
current charges CBOOST to a voltage sufficient to turn the
switch on. The BOOST pin will continue to source current to
CBOOST until the voltage at the feedback pin is greater than
0.76V.
There are various methods to derive VBOOST:
1. From the input voltage (3.0V < VIN < 5.5V)
2. From the output voltage (2.5V < VOUT < 5.5V)
3. From an external distributed voltage rail (2.5V < VEXT <
5.5V)
4. From a shunt or series zener diode
In the Simplifed Block Diagram of Figure 1, capacitor
CBOOST and diode D2 supply the gate-drive voltage for the
NMOS switch. Capacitor CBOOST is charged via diode D2 by
VIN. During a normal switching cycle, when the internal NMOS
control switch is off (TOFF) (refer to Figure 2), VBOOST equals
VIN minus the forward voltage of D2 (VFD2), during which the
current in the inductor (L) forward biases the Schottky diode
D1 (VFD1). Therefore the voltage stored across CBOOST is
VBOOST - VSW = VIN - VFD2 + VFD1
When the NMOS switch turns on (TON), the switch pin rises
to
VSW = VIN – (RDSON x IL),
forcing VBOOST to rise thus reverse biasing D2. The voltage at
VBOOST is then
VBOOST = 2VIN – (RDSON x IL) – VFD2 + VFD1
which is approximately
2VIN - 0.4V
for many applications. Thus the gate-drive voltage of the
NMOS switch is approximately
VIN - 0.2V
An alternate method for charging CBOOST is to connect D2 to
the output as shown in Figure 3. The output voltage should
be between 2.5V and 5.5V, so that proper gate voltage will be
applied to the internal switch. In this circuit, CBOOST provides
a gate drive voltage that is slightly less than VOUT.
30049108
FIGURE 3. VOUT Charges CBOOST
In applications where both VIN and VOUT are greater than
5.5V, or less than 3V, CBOOST cannot be charged directly from
these voltages. If VIN and VOUT are greater than 5.5V,
CBOOST can be charged from VIN or VOUT minus a zener volt-
age by placing a zener diode D3 in series with D2, as shown
in Figure 4. When using a series zener diode from the input,
ensure that the regulation of the input supply doesn’t create
a voltage that falls outside the recommended VBOOST voltage.
(VINMAX – VD3) < 5.5V
(VINMIN – VD3) > 2.5V
30049109
FIGURE 4. Zener Reduces Boost Voltage from VIN
An alternative method is to place the zener diode D3 in a
shunt configuration as shown in Figure 5. A small 350mW to
500mW 5.1V zener in a SOT-23 or SOD package can be used
for this purpose. A small ceramic capacitor such as a 6.3V,
0.1µF capacitor (C4) should be placed in parallel with the
zener diode. When the internal NMOS switch turns on, a pulse
of current is drawn to charge the internal NMOS gate capac-
itance. The 0.1 µF parallel shunt capacitor ensures that the
VBOOST voltage is maintained during this time.
30049148
FIGURE 5. Boost Voltage Supplied from the Shunt Zener
on VIN
Resistor R3 should be chosen to provide enough RMS current
to the zener diode (D3) and to the BOOST pin. A recom-
mended choice for the zener current (IZENER) is 1 mA. The
current IBOOST into the BOOST pin supplies the gate current
of the NMOS control switch and varies typically according to
the following formula for the X version:
IBOOST = 0.56 x (D + 0.54) x (VZENER – VD2) mA
IBOOST can be calculated for the Y version using the following:
IBOOST = 0.22 x (D + 0.54) x (VZENER - VD2) µA
where D is the duty cycle, VZENER and VD2 are in volts, and
IBOOST is in milliamps. VZENER is the voltage applied to the
anode of the boost diode (D2), and VD2 is the average forward
voltage across D2. Note that this formula for IBOOST gives typ-
ical current. For the worst case IBOOST, increase the current
by 40%. In that case, the worst case boost current will be
IBOOST-MAX = 1.4 x IBOOST
R3 will then be given by
R3 = (VIN - VZENER) / (1.4 x IBOOST + IZENER)
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LM2738
For example, using the X-version let VIN = 10V, VZENER = 5V,
VD2 = 0.7V, IZENER = 1mA, and duty cycle D = 50%. Then
IBOOST = 0.56 x (0.5 + 0.54) x (5 - 0.7) mA = 2.5mA
R3 = (10V - 5V) / (1.4 x 2.5mA + 1mA) = 1.11k
ENABLE PIN / SHUTDOWN MODE
The LM2738 has a shutdown mode that is controlled by the
enable pin (EN). When a logic low voltage is applied to EN,
the part is in shutdown mode and its quiescent current drops
to typically 400nA. The voltage at this pin should never ex-
ceed VIN + 0.3V.
SOFT-START
This function forces VOUT to increase at a controlled rate dur-
ing start up. During soft-start, the error amplifier’s reference
voltage ramps from 0V to its nominal value of 0.8V in approx-
imately 600µs. This forces the regulator output to ramp up in
a more linear and controlled fashion, which helps reduce in
rush current.
OUTPUT OVERVOLTAGE PROTECTION
The overvoltage comparator compares the FB pin voltage to
a voltage that is 16% higher than the internal reference Vref.
Once the FB pin voltage goes 16% above the internal refer-
ence, the internal NMOS control switch is turned off, which
allows the output voltage to decrease toward regulation.
UNDERVOLTAGE LOCKOUT
Undervoltage lockout (UVLO) prevents the LM2738 from op-
erating until the input voltage exceeds 2.7V (typ).
The UVLO threshold has approximately 400mV of hysteresis,
so the part will operate until VIN drops below 2.3V (typ). Hys-
teresis prevents the part from turning off during power up if
the VIN ramp-up is non-monotonic.
CURRENT LIMIT
The LM2738 uses cycle-by-cycle current limiting to protect
the output switch. During each switching cycle, a current limit
comparator detects if the output switch current exceeds 2.9A
(typ), and turns off the switch until the next switching cycle
begins.
THERMAL SHUTDOWN
Thermal shutdown limits total power dissipation by turning off
the output switch when the IC junction temperature exceeds
165°C. After thermal shutdown occurs, the output switch
doesn’t turn on until the junction temperature drops to ap-
proximately 150°C.
Design Guide
INDUCTOR SELECTION
The Duty Cycle (D) can be approximated quickly using the
ratio of output voltage (VO) to input voltage (VIN):
The catch diode (D1) forward voltage drop and the voltage
drop across the internal NMOS switch must be included to
calculate a more accurate duty cycle. Calculate D by using
the following formula:
VSW can be approximated by:
VSW = IOUT x RDSON
The diode forward drop (VD) can range from 0.3V to 0.7V de-
pending on the quality of the diode. The lower the VD, the
higher the operating efficiency of the converter. The inductor
value determines the output ripple current. Lower inductor
values decrease the size of the inductor, but increase the
output ripple current. An increase in the inductor value will
decrease the output ripple current.
One must ensure that the minimum current limit (2.0A) is not
exceeded, so the peak current in the inductor must be calcu-
lated. The peak current (ILPK) in the inductor is calculated by:
ILPK = IOUT + ΔiL
30049180
FIGURE 6. Inductor Current
In general,
ΔiL = 0.1 x (IOUT) 0.2 x (IOUT)
If ΔiL = 33.3% of 1.50A, the peak current in the inductor will
be 2.0A. The minimum guaranteed current limit over all op-
erating conditions is 2.0A. One can either reduce ΔiL, or make
the engineering judgment that zero margin will be safe
enough. The typical current limit is 2.9A.
The LM2738 operates at frequencies allowing the use of ce-
ramic output capacitors without compromising transient re-
sponse. Ceramic capacitors allow higher inductor ripple
without significantly increasing output ripple. See the output
capacitor section for more details on calculating output volt-
age ripple. Now that the ripple current is determined, the
inductance is calculated by:
Where
When selecting an inductor, make sure that it is capable of
supporting the peak output current without saturating. Induc-
tor saturation will result in a sudden reduction in inductance
and prevent the regulator from operating correctly. Because
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LM2738
of the speed of the internal current limit, the peak current of
the inductor need only be specified for the required maximum
output current. For example, if the designed maximum output
current is 1.0A and the peak current is 1.25A, then the induc-
tor should be specified with a saturation current limit of >
1.25A. There is no need to specify the saturation or peak cur-
rent of the inductor at the 2.9A typical switch current limit.
Because of the operating frequency of the LM2738, ferrite
based inductors are preferred to minimize core losses. This
presents little restriction since the variety of ferrite-based in-
ductors is huge. Lastly, inductors with lower series resistance
(RDCR) will provide better operating efficiency. For recom-
mended inductors see Example Circuits.
INPUT CAPACITOR
An input capacitor is necessary to ensure that VIN does not
drop excessively during switching transients. The primary
specifications of the input capacitor are capacitance, voltage,
RMS current rating, and ESL (Equivalent Series Inductance).
The recommended input capacitance is 10 µF.The input volt-
age rating is specifically stated by the capacitor manufacturer.
Make sure to check any recommended deratings and also
verify if there is any significant change in capacitance at the
operating input voltage and the operating temperature. The
input capacitor maximum RMS input current rating (IRMS-IN)
must be greater than:
Neglecting inductor ripple simplifies the above equation to:
It can be shown from the above equation that maximum RMS
capacitor current occurs when D = 0.5. Always calculate the
RMS at the point where the duty cycle D is closest to 0.5. The
ESL of an input capacitor is usually determined by the effec-
tive cross sectional area of the current path. A large leaded
capacitor will have high ESL and a 0805 ceramic chip capac-
itor will have very low ESL. At the operating frequencies of the
LM2738, leaded capacitors may have an ESL so large that
the resulting impedance (2πfL) will be higher than that re-
quired to provide stable operation. As a result, surface mount
capacitors are strongly recommended.
Sanyo POSCAP, Tantalum or Niobium, Panasonic SP, and
multilayer ceramic capacitors (MLCC) are all good choices for
both input and output capacitors and have very low ESL. For
MLCCs it is recommended to use X7R or X5R type capacitors
due to their tolerance and temperature characteristics. Con-
sult capacitor manufacturer datasheets to see how rated
capacitance varies over operating conditions.
OUTPUT CAPACITOR
The output capacitor is selected based upon the desired out-
put ripple and transient response. The initial current of a load
transient is provided mainly by the output capacitor. The out-
put ripple of the converter is:
When using MLCCs, the ESR is typically so low that the ca-
pacitive ripple may dominate. When this occurs, the output
ripple will be approximately sinusoidal and 90° phase shifted
from the switching action. Given the availability and quality of
MLCCs and the expected output voltage of designs using the
LM2738, there is really no need to review any other capacitor
technologies. Another benefit of ceramic capacitors is their
ability to bypass high frequency noise. A certain amount of
switching edge noise will couple through parasitic capaci-
tances in the inductor to the output. A ceramic capacitor will
bypass this noise while a tantalum will not. Since the output
capacitor is one of the two external components that control
the stability of the regulator control loop, most applications will
require a minimum of 22 µF of output capacitance. Capaci-
tance, in general, is often increased when operating at lower
duty cycles. Refer to the circuit examples at the end of the
datasheet for suggested output capacitances of common ap-
plications. Like the input capacitor, recommended multilayer
ceramic capacitors are X7R or X5R types.
CATCH DIODE
The catch diode (D1) conducts during the switch off-time. A
Schottky diode is recommended for its fast switching times
and low forward voltage drop. The catch diode should be
chosen so that its current rating is greater than:
ID1 = IOUT x (1-D)
The reverse breakdown rating of the diode must be at least
the maximum input voltage plus appropriate margin. To im-
prove efficiency, choose a Schottky diode with a low forward
voltage drop.
OUTPUT VOLTAGE
The output voltage is set using the following equation where
R2 is connected between the FB pin and GND, and R1 is
connected between VO and the FB pin. A good value for R2
is 10k. When designing a unity gain converter (Vo = 0.8V), R1
should be between 0 and 100, and R2 should not be load-
ed.
VREF = 0.80V
PCB LAYOUT CONSIDERATIONS
When planning layout there are a few things to consider when
trying to achieve a clean, regulated output. The most impor-
tant consideration is the close coupling of the GND connec-
tions of the input capacitor and the catch diode D1. These
ground ends should be close to one another and be connect-
ed to the GND plane with at least two through-holes. Place
these components as close to the IC as possible. Next in im-
portance is the location of the GND connection of the output
capacitor, which should be near the GND connections of
CIN and D1. There should be a continuous ground plane on
the bottom layer of a two-layer board except under the switch-
ing node island. The FB pin is a high impedance node and
care should be taken to make the FB trace short to avoid noise
pickup and inaccurate regulation. The feedback resistors
should be placed as close as possible to the IC, with the GND
of R1 placed as close as possible to the GND of the IC. The
VOUT trace to R2 should be routed away from the inductor and
any other traces that are switching. High AC currents flow
through the VIN, SW and VOUT traces, so they should be as
short and wide as possible. However, making the traces wide
increases radiated noise, so the designer must make this
trade-off. Radiated noise can be decreased by choosing a
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LM2738
shielded inductor. The remaining components should also be
placed as close as possible to the IC. Please see Application
Note AN-1229 for further considerations and the LM2738 de-
mo board as an example of a four-layer layout.
RECOMMENED OPERATING AREA DUE TO MINIMUM
ON TIME
The LM2738 operates over a wide range of conditions, which
is limited by the ON time of the device. A graph is provided to
show the recommended operating area for the "X" at the full
load (1.5A) and at 25°C ambient. The "Y" version of the
LM2738 operates at a lower frequency and therefore oper-
ates over the entire range of operating voltages.
30049187
FIGURE 7. LM2738X - 1.6MHz (25°C, LOAD=1.5A)
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LM2738
Calculating Efficiency, and Junction
Temperature
The complete LM2738 DC/DC converter efficiency can be
calculated in the following manner.
Or
Calculations for determining the most significant power loss-
es are shown below. Other losses totaling less than 2% are
not discussed.
Power loss (PLOSS) is the sum of two basic types of losses in
the converter: switching and conduction. Conduction losses
usually dominate at higher output loads, whereas switching
losses remain relatively fixed and dominate at lower output
loads. The first step in determining the losses is to calculate
the duty cycle (D):
VSW is the voltage drop across the internal NFET when it is
on, and is equal to:
VSW = IOUT x RDSON
VD is the forward voltage drop across the Schottky catch
diode. It can be obtained from the diode manufactures Elec-
trical Characteristics section. If the voltage drop across the
inductor (VDCR) is accounted for, the equation becomes:
The conduction losses in the free-wheeling Schottky diode
are calculated as follows:
PDIODE = VD x IOUT x (1-D)
Often this is the single most significant power loss in the cir-
cuit. Care should be taken to choose a Schottky diode that
has a low forward voltage drop.
Another significant external power loss is the conduction loss
in the output inductor. The equation can be simplified to:
PIND = IOUT2 x RDCR
The LM2738 conduction loss is mainly associated with the
internal NFET switch:
If the inductor ripple current is fairly small, the conduction
losses can be simplified to:
PCOND = IOUT2 x RDSON x D
Switching losses are also associated with the internal NFET
switch. They occur during the switch on and off transition pe-
riods, where voltages and currents overlap resulting in power
loss. The simplest means to determine this loss is to empiri-
cally measure the rise and fall times (10% to 90%) of the
switch at the switch node.
Switching Power Loss is calculated as follows:
PSWR = 1/2(VIN x IOUT x FSW x TRISE)
PSWF = 1/2(VIN x IOUT x FSW x TFALL)
PSW = PSWR + PSWF
Another loss is the power required for operation of the internal
circuitry:
PQ = IQ x VIN
IQ is the quiescent operating current, and is typically around
1.9mA for the 0.55MHz frequency option.
Typical Application power losses are:
Power Loss Tabulation
VIN 12.0V
VOUT 3.3V POUT 4.125W
IOUT 1.25A
VD0.34V PDIODE 317mW
FSW 550kHz
IQ1.9mA PQ22.8mW
TRISE 8nS PSWR 33mW
TFALL 8nS PSWF 33mW
RDS(ON) 275mPCOND 118mW
INDDCR 70mPIND 110mW
D 0.275 PLOSS 634mW
η86.7% PINTERNAL 207mW
ΣPCOND + PSW + PDIODE + PIND + PQ = PLOSS
ΣPCOND + PSWF + PSWR + PQ = PINTERNAL
PINTERNAL = 207mW
Thermal Definitions
TJ = Chip junction temperature
TA = Ambient temperature
RθJC = Thermal resistance from chip junction to device case
RθJA = Thermal resistance from chip junction to ambient air
Heat in the LM2738 due to internal power dissipation is re-
moved through conduction and/or convection.
Conduction: Heat transfer occurs through cross sectional ar-
eas of material. Depending on the material, the transfer of
heat can be considered to have poor to good thermal con-
ductivity properties (insulator vs. conductor).
Heat Transfer goes as:
Silicon package lead frame PCB
Convection: Heat transfer is by means of airflow. This could
be from a fan or natural convection. Natural convection occurs
when air currents rise from the hot device to cooler air.
13 www.national.com
LM2738
Thermal impedance is defined as:
Thermal impedance from the silicon junction to the ambient
air is defined as:
The PCB size, weight of copper used to route traces and
ground plane, and number of layers within the PCB can great-
ly effect RθJA. The type and number of thermal vias can also
make a large difference in the thermal impedance. Thermal
vias are necessary in most applications. They conduct heat
from the surface of the PCB to the ground plane. Four to six
thermal vias should be placed under the exposed pad to the
ground plane if the LLP package is used.
Thermal impedance also depends on the thermal properties
due to the application's operating conditions (Vin, Vo, Io etc),
and the surrounding circuitry.
Silicon Junction Temperature Determination Method 1:
To accurately measure the silicon temperature for a given
application, two methods can be used. The first method re-
quires the user to know the thermal impedance of the silicon
junction to top case temperature.
Some clarification needs to be made before we go any further.
RθJC is the thermal impedance from all six sides of an IC
package to silicon junction.
RΦJC is the thermal impedance from top case to the silicon
junction.
In this data sheet we will use RΦJC so that it allows the user
to measure top case temperature with a small thermocouple
attached to the top case.
RΦJC is approximately 30°C/Watt for the 8-pin LLP package
with the exposed pad. Knowing the internal dissipation from
the efficiency calculation given previously, and the case tem-
perature, which can be empirically measured on the bench
we have:
Therefore:
Tj = (RΦJC x PLOSS) + TC
From the previous example:
Tj = (RΦJC x PINTERNAL) + TC
Tj = 30°C/W x 0.207W + TC
The second method can give a very accurate silicon junction
temperature.
The first step is to determine RθJA of the application. The
LM2738 has over-temperature protection circuitry. When the
silicon temperature reaches 165°C, the device stops switch-
ing. The protection circuitry has a hysteresis of about 15°C.
Once the silicon temperature has decreased to approximately
150°C, the device will start to switch again. Knowing this, the
RθJA for any application can be characterized during the early
stages of the design one may calculate the RθJA by placing
the PCB circuit into a thermal chamber. Raise the ambient
temperature in the given working application until the circuit
enters thermal shutdown. If the SW-pin is monitored, it will be
obvious when the internal NFET stops switching, indicating a
junction temperature of 165°C. Knowing the internal power
dissipation from the above methods, the junction tempera-
ture, and the ambient temperature RθJA can be determined.
Once this is determined, the maximum ambient temperature
allowed for a desired junction temperature can be found.
An example of calculating RθJA for an application using the
National Semiconductor LM2738 LLP demonstration board is
shown below.
The four layer PCB is constructed using FR4 with ½ oz copper
traces. The copper ground plane is on the bottom layer. The
ground plane is accessed by two vias. The board measures
3.0cm x 3.0cm. It was placed in an oven with no forced airflow.
The ambient temperature was raised to 144°C, and at that
temperature, the device went into thermal shutdown.
From the previous example:
PINTERNAL = 207mW
If the junction temperature was to be kept below 125°C, then
the ambient temperature could not go above 109°C
Tj - (RθJA x PLOSS) = TA
125°C - (102°C/W x 207mW) = 104°C
LLP Package
30049174
FIGURE 8. Internal LLP Connection
For certain high power applications, the PCB land may be
modified to a "dog bone" shape (see Figure 9). By increasing
the size of ground plane, and adding thermal vias, the RθJA
for the application can be reduced.
www.national.com 14
LM2738
30049179
FIGURE 9. 8-Lead LLP PCB Dog Bone Layout
15 www.national.com
LM2738
LM2738X Circuit Example 1
30049142
FIGURE 10. LM2738X (1.6MHz)
VBOOST Derived from VIN
5V to 1.5V/1.5A
Bill of Materials for Figure 10
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738X National Semiconductor
C1, Input Cap 10µF, 6.3V, X5R C3216X5ROJ106M TDK
C2, Output Cap 22µF, 6.3V, X5R C3216X5ROJ226M TDK
C3, Boost Cap 0.1uF, 16V, X7R C1005X7R1C104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
L1 2.2µH, 1.9A, MSS5131-222ML Coilcraft
R1 8.87kΩ, 1% CRCW06038871F Vishay
R2 10.2kΩ, 1% CRCW06031022F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
www.national.com 16
LM2738
LM2738X Circuit Example 2
30049193
FIGURE 11. LM2738X (1.6MHz)
VBOOST Derived from VOUT
12V to 3.3V/1.5A
Bill of Materials for
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator NSC LM2738X
C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK
C2, Output Cap 33µF, 6.3V, X5R C3216X5ROJ336M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
L1 5µH, 2.9A MSS7341- 502NL Coilcraft
R1 31.6kΩ, 1% CRCW06033162F Vishay
R2 10kΩ, 1% CRCW06031002F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
17 www.national.com
LM2738
LM2738X Circuit Example 3
30049144
FIGURE 12. LM2738X (1.6MHz)
VBOOST Derived from VSHUNT
18V to 1.5V/1.5A
Bill of Materials for
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738X National Semiconductor
C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK
C2, Output Cap 47µF, 6.3V, X5R C3216X5ROJ476M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
C4, Shunt Cap 0.1µF, 6.3V, X5R C1005X5R0J104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
D3, Zener Diode 5.1V 250Mw SOT-23 BZX84C5V1 Vishay
L1 2.7µH, 1.76A VLCF5020T-2R7N1R7 TDK
R1 8.87kΩ, 1% CRCW06038871F Vishay
R2 10.2kΩ, 1% CRCW06031022F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
R4 4.12kΩ, 1% CRCW06034121F Vishay
www.national.com 18
LM2738
LM2738X Circuit Example 4
30049149
FIGURE 13. LM2738X (1.6MHz)
VBOOST Derived from Series Zener Diode (VIN)
15V to 1.5V/1.5A
Bill of Materials for
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738X National Semiconductor
C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK
C2, Output Cap 47µF, 6.3V, X5R C3216X5ROJ476M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
D3, Zener Diode 11V 350Mw SOT-23 BZX84C11T Diodes, Inc.
L1 3.3µH, 3.5A MSS7341-332NL Coilcraft
R1 8.87kΩ, 1% CRCW06038871F Vishay
R2 10.2kΩ, 1% CRCW06031022F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
19 www.national.com
LM2738
LM2738X Circuit Example 5
30049150
FIGURE 14. LM2738X (1.6MHz)
VBOOST Derived from Series Zener Diode (VOUT)
15V to 9V/1.5A
Bill of Materials for
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738X National Semiconductor
C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK
C2, Output Cap 22µF, 16V, X5R C3216X5R1C226M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
D3, Zener Diode 4.3V 350mw SOT-23 BZX84C4V3 Diodes, Inc.
L1 6.2µH, 2.5A MSS7341-622NL Coilcraft
R1 102kΩ, 1% CRCW06031023F Vishay
R2 10.2kΩ, 1% CRCW06031022F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
www.national.com 20
LM2738
LM2738Y Circuit Example 6
30049142
FIGURE 15. LM2738Y (550kHz)
VBOOST Derived from VIN
5V to 1.5V/1.5A
Bill of Materials for Figure 15
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738Y National Semiconductor
C1, Input Cap 10µF, 6.3V, X5R C3216X5ROJ106M TDK
C2, Output Cap 47µF, 6.3V, X5R C3216X5ROJ476M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
L1 6.2µH, 2.5A, MSS7341-622NL Coilcraft
R1 8.87kΩ, 1% CRCW06038871F Vishay
R2 10.2kΩ, 1% CRCW06031022F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
21 www.national.com
LM2738
LM2738Y Circuit Example 7
30049193
FIGURE 16. LM2738Y (550kHz)
VBOOST Derived from VOUT
12V to 3.3V/1.5A
Bill of Materials for
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738Y National Semiconductor
C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK
C2, Output Cap 47µF, 6.3V, X5R C3216X5ROJ476M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Vishay
L1 12µH, 1.7A, MSS7341-123NL Coilcraft
R1 31.6kΩ, 1% CRCW06033162F Vishay
R2 10.0 kΩ, 1% CRCW06031002F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
www.national.com 22
LM2738
LM2738Y Circuit Example 8
30049144
FIGURE 17. LM2738Y (550kHz)
VBOOST Derived from VSHUNT
18V to 1.5V/1.5A
Bill of Materials for
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738Y National Semiconductor
C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK
C2, Output Cap (47µF, 6.3V, X5R) x 2 = 94µF C3216X5ROJ476M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
C4, Shunt Cap 0.1µF, 6.3V, X5R C1005X5R0J104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
D3, Zener Diode 5.1V 250Mw SOT-23 BZX84C5V1 Vishay
L1 8.7µH, 2.2A MSS7341-872NL Coilcraft
R1 8.87kΩ, 1% CRCW06038871F Vishay
R2 10.2kΩ, 1% CRCW06031022F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
R4 4.12kΩ, 1% CRCW06034121F Vishay
23 www.national.com
LM2738
LM2738Y Circuit Example 9
30049149
FIGURE 18. LM2738Y (550kHz)
VBOOST Derived from Series Zener Diode (VIN)
15V to 1.5V/1.5A
Bill of Materials for
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738Y National Semiconductor
C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK
C2, Output Cap (47µF, 6.3V, X5R) x 2 = 94µF C3216X5ROJ476M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
D3, Zener Diode 11V 350Mw SOT-23 BZX84C11T Diodes, Inc.
L1 8.7µH, 2.2A MSS7341-872NL Coilcraft
R1 8.87kΩ, 1% CRCW06038871F Vishay
R2 10.2kΩ, 1% CRCW06031022F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
www.national.com 24
LM2738
LM2738Y Circuit Example 10
30049150
FIGURE 19. LM2738Y (550kHz)
VBOOST Derived from Series Zener Diode (VOUT)
15V to 9V/1.5A
Bill of Materials for
Part ID Part Value Part Number Manufacturer
U1 1.5A Buck Regulator LM2738Y National Semiconductor
C1, Input Cap 10µF, 25V, X7R C3225X7R1E106M TDK
C2, Output Cap 22µF, 16V, X5R C3216X5R1C226M TDK
C3, Boost Cap 0.1µF, 16V, X7R C1005X7R1C104K TDK
D1, Catch Diode 0.34VF Schottky 1.5A, 30V CRS08 Toshiba
D2, Boost Diode 1VF @ 100mA Diode BAT54WS Diodes, Inc.
D3, Zener Diode 4.3V 350mw SOT-23 BZX84C4V3 Diodes, Inc.
L1 15µH, 2.1A SLF7055T150M2R1-3PF TDK
R1 102kΩ, 1% CRCW06031023F Vishay
R2 10.2kΩ, 1% CRCW06031022F Vishay
R3 100kΩ, 1% CRCW06031003F Vishay
25 www.national.com
LM2738
Physical Dimensions inches (millimeters) unless otherwise noted
8-Lead LLP Package
NS Package Number SDA08A
8-Lead eMSOP Package
NS Package Number MUY08A
www.national.com 26
LM2738
Notes
27 www.national.com
LM2738
Notes
LM2738 550kHz/1.6MHz 1.5A Step-Down DC-DC Switching Regulator
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