© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 2 1Publication Order Number:
MBR30H100MFS/D
MBR30H100MFS,
NRVB30H100MFS
Switch-mode
Power Rectifiers
These state−of−the−art devices have the following features:
Features
•Low Power Loss / High Efficiency
•New Package Provides Capability of Inspection and Probe After
Board Mounting
•Guardring for Stress Protection
•Low Forward Voltage Drop
•175°C Operating Junction Temperature
•Wettable Flacks Option Available
•NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These are Pb−Free and Halide−Free Devices
Mechanical Characteristics:
•Case: Epoxy, Molded
•Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
•Lead Finish: 100% Matte Sn (Tin)
•Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
•Device Meets MSL 1 Requirements
Applications
•Output Rectification in Compact Portable Consumer Applications
•Freewheeling Diode used with Inductive Loads
•Telecom Power Conversion
•Automotive Freewheeling Diode
Device Package Shipping†
ORDERING INFORMATION
MBR30H100MFST1G SO−8 FL
(Pb−Free) 1500 /
Tape & Reel
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
100 VOLTS
www.onsemi.com
1,2,3 5,6
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B30H10 = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
MARKING
DIAGRAM
B30H10
AYWZZ
A
A
A
Not Used
C
C
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MBR30H100MFST3G SO−8 FL
(Pb−Free) 5000 /
Tape & Reel
NRVB30H100MFST1G SO−8 FL
(Pb−Free) 1500 /
Tape & Reel
NRVB30H100MFST3G SO−8 FL
(Pb−Free) 5000 /
Tape & Reel
MBR30H100MFS, NRVB30H100MFS
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR100
V
Average Rectified Forward Current
(Rated VR, TC = 140°C) IF(AV) 30 A
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 135°C) IFRM 60 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 300 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ−55 to +175 °C
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 100 mJ
ESD Rating (Human Body Model) 3B
ESD Rating (Machine Model) M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS
Characteristic Symbol Typ Max Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJC − 1.6 °C/W
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 15 A, TJ = 125°C)
(iF = 15 A, TJ = 25°C)
(iF = 30 A, TJ = 125°C)
(iF = 30 A, TJ = 25°C)
vF0.58
0.71
0.66
0.81
0.72
0.76
0.86
0.90
V
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR5
0.005 15
0.1
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2.0%.
MBR30H100MFS, NRVB30H100MFS
www.onsemi.com
3
TYPICAL CHARACTERISTICS
10
100
1000
10000
0 102030405060708090100
Figure 1. Typical Instantaneous Forward
Characteristics Figure 2. Maximum Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.90.80.60.50.30.20.10
0.1
1
10
100
Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics
VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V)
907060504020100
1.E−12 908060504020100
Figure 5. Typical Junction Capacitance Figure 6. Current Derating
VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C)
1601401201008060
0
5
15
25
30
40
50
60
iF, INSTANTANEOUS FORWARD
CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)C, JUNCTION CAPACITANCE (pF)
IF(AV), AVERAGE FORWARD CURRENT (A)
0.4 0.7 1.0 0.90.80.60.50.30.20.10
0.1
1
10
iF, INSTANTANEOUS FORWARD
CURRENT (A)
0.4 0.7 1.0
100
TA = 175°C
TA = 125°C
TA = 150°C
TA = −40°C
TA = 25°C
TA = 175°C
TA = 125°C
TA = 150°C
TA = −40°C
TA = 25°C
TA = 175°C
TA = 125°CTA = 150°C
TA = −40°C
TA = 25°C
30 80 100
1.E−11
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
1.E−12
IR, INSTANTANEOUS REVERSE CURRENT (A)
1.E−11
1.E−10
1.E−09
1.E−08
1.E−07
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00 TA = 175°C
TA = 125°CTA = 150°C
TA = −40°C
TA = 25°C
30 70 100
TJ = 25°C
10
20
35
45
55 dc
Square Wave
RqJC = 1.6°C/W
MBR30H100MFS, NRVB30H100MFS
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Forward Power Dissipation
IF(AV), AVERAGE FORWARD CURRENT (A)
43210
0
1
2
3
5
6
7
8
Figure 8. Thermal Characteristics
PULSE TIME (sec)
0.010.001 0.10.0001 100.00001 10.000001
0.001
0.01
0.1
1
10
100
PF(AV), AVERAGE FORWARD POW-
ER DISSIPATION (W)
R(t) (°C/W)
100 1000
4
IPK/IAV = 20 TJ = 175°C
IPK/IAV = 10
IPK/IAV = 5
dc
Square Wave
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
MBR30H100MFS, NRVB30H100MFS
www.onsemi.com
5
PACKAGE DIMENSIONS
DFN6 5x6, 1.27P
(SO8 FL)
CASE 488AA
ISSUE H
M3.00 3.40
q0 −−−
_
3.80
12
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
1234
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1 q
D
E
2
2
B
A
0.20 C
0.20 C
2 X
2 X
DIM MIN NOM
MILLIMETERS
A0.90 1.00
A1 0.00 −−−
b0.33 0.41
c0.23 0.28
D5.15 BSC
D1 4.70 4.90
D2 3.80 4.00
E6.15 BSC
E1 5.70 5.90
E2 3.45 3.65
e1.27 BSC
G0.51 0.61
K1.20 1.35
L0.51 0.61
L1 0.05 0.17
A
0.10 C
0.10 C
DETAIL A
14
L1
e/2
8X
D2
G
E2
K
b
A0.10 B
C
0.05 cL
DETAIL A
A1
e
3 X
c
4 X
C
SEATING
PLANE
MAX
1.10
0.05
0.51
0.33
5.10
4.20
6.10
3.85
0.71
1.50
0.71
0.20
M
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.270
2X
0.750
1.000
0.905
0.475
4.530
1.530
4.560
0.495
3.200
1.330
0.965
2X
2X
3X 4X
4X
PIN 5
(EXPOSED PAD)
STYLE 2:
PIN 1. ANODE
2. ANODE
3. ANODE
4. NO CONNECT
5. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation s pecial, c onsequential o r i ncidental d amages. “Typical” p arameters w hich may b e p rovided i n S CILLC d ata s heets a nd/or s pecificat ions can and d o v ary i n d if ferent a pplications
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P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
MBR30H100MFS/D
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