PD - 96383A AUTOMOTIVE GRADE AUIRF2805S AUIRF2805L HEXFET(R) Power MOSFET Features l l l l l l l l l Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D V(BR)DSS G S 55V RDS(on) max. 4.7m ID 135A h Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. D2Pak AUIRF2805S TO-262 AUIRF2805L G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (Tested) IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested value Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Max. c d c i e Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Units h h 135 96 700 200 1.3 20 380 920 j A W W/C V mJ See Fig.12a,12b, 15,16 A mJ 2.0 V/ns -55 to + 175 C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient (PCB mounted) k Typ. Max. Units --- --- 0.75 40 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 08/29/11 AUIRF2805S/L Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage Parameter 55 --- --- V V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient --- 0.06 --- V/C Reference to 25C, ID = 1mA RDS(on) VGS(th) Static Drain-to-Source On-Resistance Gate Threshold Voltage --- 3.9 4.7 2.0 --- 4.0 m V VDS = VGS, ID = 250A gfs IDSS Forward Transconductance 91 --- --- S VDS = 25V, ID = 104A Drain-to-Source Leakage Current --- --- 20 A VDS = 55V, VGS = 0V --- --- 250 Gate-to-Source Forward Leakage --- --- 200 nA VGS = 20V Gate-to-Source Reverse Leakage --- --- -200 IGSS Conditions VGS = 0V, ID = 250A VGS = 10V, ID = 104A f VDS = 44V, VGS = 0V, TJ = 150C VGS = -20V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Total Gate Charge Qgs Gate-to-Source Charge --- 38 57 Qgd Gate-to-Drain ("Miller") Charge --- 52 78 VGS = 10V td(on) Turn-On Delay Time --- 14 --- VDD = 28V tr Rise Time --- 120 --- td(off) Turn-Off Delay Time --- 68 --- tf Fall Time --- 110 --- LD Internal Drain Inductance LS --- Internal Source Inductance 150 ID = 104A 230 --- 4.5 --- --- 7.5 --- nC VDS = 44V f ID = 104A ns RG = 2.5 f VGS = 10V Between lead, nH D 6mm (0.25in.) Between lead, G Ciss Input Capacitance --- 5110 --- and center of die contact VGS = 0V Coss Output Capacitance --- 1190 --- VDS = 25V Crss Reverse Transfer Capacitance --- 210 --- Coss Output Capacitance --- 6470 --- Coss Output Capacitance Effective Output Capacitance Coss eff. pF S = 1.0MHz, See Fig.5 VGS = 0V, VDS = 1.0V, =1.0MHz --- 860 --- VGS = 0V, VDS = 44V, =1.0MHz --- 1600 --- VGS = 0V, VDS = 0V to 44V Min. Typ. Max. g Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current h Units --- --- --- VSD (Body Diode) Diode Forward Voltage --- --- --- 1.3 V trr Reverse Recovery Time --- 80 120 ns Qrr Reverse Recovery Charge --- 290 430 nC ton Forward Turn-On Time c 175 Conditions MOSFET symbol A 700 showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 104A, VGS = 0V f S TJ = 25C, IF = 104A di/dt = 100A/s f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.08mH, RG = 25, IAS = 104A. (See Figure 12). ISD 104A, di/dt 240A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Limited by T Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value determined from sample failure population Starting T J = 25C, L = 0.08mH, RG = 25, IAS = 104A. When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com AUIRF2805S/L Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-D2 PAK MSL1 3L-TO-262 N/A Machine Model Class M4(+/- 800V ) (per AEC-Q101-002) Human Body Model ESD Class H3A(+/- 5000V ) (per AEC-Q101-001) Charged Device Model RoHS Compliant Class C5(+/- 2000V ) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifier's web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passing voltage www.irf.com 3 AUIRF2805S/L 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 4.5V 10 100 20s PULSE WIDTH Tj = 25C 1 0.1 1 10 4.5V 20s PULSE WIDTH Tj = 175C 10 0.1 100 1 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3.0 1000 T J = 25C I D = 175A 2.5 100 VDS = 25V 20s PULSE WIDTH 10 4.0 5.0 6.0 7.0 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 10.0 2.0 (Normalized) T J = 175C RDS(on) , Drain-to-Source On Resistance ID, Drain-to-Source Current (A) 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 4 10 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRF2805S/L 10000 Crss Coss ID= 104A VGS , Gate-to-Source Voltage (V) 8000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED = Cgd = Cds + Cgd 6000 Ciss 4000 2000 Coss 1 12 8 4 0 Crss 0 16 10 0 100 10000 ID, Drain-to-Source Current (A) 1000.0 T J = 175C 10.0 TJ = 25C 1.0 VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-toDrain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 80 120 160 200 240 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD, Reverse Drain Current (A) 40 Q G Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 100.0 VDS= 44V VDS= 28V 1000 100 100sec 1msec 10 1 1.8 OPERATION IN THIS AREA LIMITED BY RDS(on) Tc = 25C Tj = 175C Single Pulse 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF2805S/L 140 LIMITED BY PACKAGE ID , Drain Current (A) RD V DS 120 VGS 100 D.U.T. RG + -V DD 80 10V 60 Pulse Width 1 s Duty Factor 0.1 % 40 20 0 Fig 10a. Switching Time Test Circuit 25 50 75 100 125 150 175 TC , Case Temperature ( C) VDS 90% 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.01 0.00001 0.10 PDM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRF2805S/L 15V DRIVER L VDS D.U.T RG + V - DD IAS VGS 20V A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) 800 ID 42.5A 73.5A BOTTOM 104A TOP 600 400 200 V(BR)DSS 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms QG QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. ID = 250A 3.0 2.0 1.0 50K 12V -VGS(th) Gate threshold Voltage (V) 10 V 4.0 -75 .2F .3F D.U.T. + V - DS VGS -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( C ) Fig 14. Threshold Voltage Vs. Temperature 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRF2805S/L 10000 Avalanche Current (A) 1000 Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 0.05 10 0.10 1 0.1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 104A 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature 8 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF2805S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG VGS * + * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period V[ GS=10V] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET(R) power MOSFETs www.irf.com 9 AUIRF2805S/L D2Pak Package Outline (Dimensions are shown in millimeters (inches)) D2Pak Part Marking Information Part Number AUF2805S YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF2805S/L TO-262 Package Outline ( Dimensions are shown in millimeters (inches)) TO-262 Part Marking Information Part Number AUF2805L YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF2805S/L D2Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 12 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 www.irf.com AUIRF2805S/L Ordering Information Base part AUIRF2805L AUIRF2805S www.irf.com Package Type TO-262 D2Pak Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right Complete Part Number Quantity 50 50 800 800 AUIRF2805L AUIRF2805S AUIRF2805STRL AUIRF2805STRR 13 AUIRF2805S/L IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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