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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Afrmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
©1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6
September 2015
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177
P-Channel Switch
Ordering Information
Figure 1. J175 / J176 Device Package Figure 2. MMBFJ175 / 176 / 177 Device Package
Part Number Marking Package Packing Method
J175_D26Z J175 TO-92 3L Tape and Reel
J176_D74Z J176 TO-92 3L Ammo
MMBFJ175 6W SOT-23 3L Tape and Reel
MMBFJ176 6X SOT-23 3L Tape and Reel
MMBFJ177 6Y SOT-23 3L Tape and Reel
1. Drain
123123
Straight Lead Bent Lead
TO-92
Bulk Packing Tape & Reel
Ammo Packing
2. Gate
3. Source
SOT-23
Mark: 6W / 6X / 6Y
G
D
S
Note: Source & drain are interchangeable.
Description
This device is designed for low-level analog switching
sample-and-hold circuits and chopper-stabilized
amplifiers. Sourced from process 88.
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 2
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Symbol Parameter Value Unit
VDG Drain-Gate Voltage -30 V
VGS Gate-Source Voltage 30 V
IGF Forward Gate Current 50 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to + 150 °C
Symbol Parameter
Max.
Unit
J175 / J176 (3) MMBFJ175 /
MMBFJ176 /
MMBFJ177 (3)
PD
Total Device Dissipation 350 225 mW
Derate Above 25°C2.81.8mW/°C
RθJC Thermal Resistance, Junction to Case 125 °C/W
RθJA Thermal Resistance, Junction to Ambient 357 556 °C/W
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 3
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 30 V
IGSS Gate Reverse Current VGS = 20 V, VDS = 0 1.0 nA
VGS(off) Gate-Source Cut-Off Voltage VDS = -15 V, ID = -10 nA
J175 /
MMBFJ175 3.0 6.0
VJ176 /
MMBFJ176 1.0 4.0
MMBFJ177 0.8 2.5
On Characteristics
IDSS Zero-Gate Voltage Drain Current(4) VDS = -15 V, IGS = 0
J175 /
MMBFJ175 -7.0 -60.0
mAJ176 /
MMBFJ176 -2.0 -25.0
MMBFJ177 -1.5 -20.0
rDS(on) Drain-Source On Resistance VDS 0.1 V, VGS = 0
J175 /
MMBFJ175 125
ΩJ176 /
MMBFJ176 250
MMBFJ177 300
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 4
Typical Performance Characteristics
Figure 3. Common Drain-Source Figure 4. Parameter Interactions
Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics
Figure 7. Normalized Drain Resistance vs.
Bias Voltage Figure 8. Output Conductance vs. Drain Current
-5-4-3-2-10
-20
-16
-12
-8
-4
0
V - DRAIN-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
DS
D
1.0 V
2.5 V
2.0 V
0.5 V
1.5 V
V = 0 V
GS
T = 25°C
TYP V = 4.5 V
GS(off)
A
3.0 V 3.5 V
r - DRAIN "ON" RESISTANCE (Ω
Ω)
12 510
1
5
10
50
100
10
50
100
500
1,000
V - GATE CUTOFF VOLTAGE (V)
g - TRANSCONDUCTANCE (mmhos)
GS (OFF)
fs
I , g @ V = 15V,
V = 0 PULSED
r @ -100 mV, V = 0
V @ V = - 15V,
I = - 1.0 μA
GS(off)
DSS
r
D
I
DSS
DS
DS
GS
DS
DS
GS
fs
DS
DS
g
fs
01234
-32
-24
-16
-8
0
V - GATE-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
GS
D
V = - 4.5 V
GS(off)
25°C
V = - 15 V
DS
V = 2.5 V
GS(off)
125°C
- 55°C
25°C
125°C
- 55°C
01234
0
4
8
12
16
V - GATE-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
GS
D
V = - 4.5 V
GS(off)
25°C
V = - 15 V
DS
V = 2.5 V
GS(off)
125°C
- 55°C
25°C
- 55°C
125°C
0 0.2 0.4 0.6 0.8 1
1
2
5
10
20
50
100
V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)
r - NORMALIZED RESISTANCE
GS
DS
r =
DS
V @ 5.0V, 10 μA
GS(off)
r
DS
________
V
GS(off)
V
GS
1 -
GS(off)
( Ω ) Ω )
Ω ) Ω )
Ω )
0.01 0.1 1 10
1
10
100
1000
I - DRAIN CURRENT (mA)
g - OUTPUT CONDUCTANCE ( mhos)
D
os
V = - 4.5V
GS(off)
f = 1.0 kHz
μ
V = - 2.5V
GS(off)
-20V
-10V
-10V
-20V
-5.0V
-5.0V
_
___
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 5
Typical Performance Characteristics (Continued)
Figure 9. Transconductance vs. Drain Current Figure 10. Capacitance vs. Voltage
Figure 11. Noise Voltage vs. Frequency Figure 12. Channel Resistance vs. Temperature
Figure 13. Power Dissipation vs.
Ambient Temperature
0.1 1 10 100
0.1
0.5
1
5
10
I - DRAIN CURRENT (mA)
g - TRANSCONDUCTANCE (mmhos)
D
fs
V = 2.5V
GS(off)
V = -15V
f = 1.0 kHz
DG
V = 6.0V
GS(off)
- 55°C
25°C
125°C
25°C
_
__
_
048121620
1
5
10
100
V - GATE-SOURCE VOLTAGE (V)
C (C ) - CAPACITANCE (pF)
rs
GS
is
C (V = -15V)
is
DS
C (V = -15V)
rs
DS
f = 0.1 - 1.0 MHz
0.01 0.1 1 10 100
1
5
10
50
100
f - FREQUENCY (kHz)
e - NOISE VOLTAGE (nV / Hz)
n
V = - 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.2f @ f 1.0 kHz
DG
I = 5.0 mA
D
I = - 0.2 mA
D
-50 0 50 100 150
10
50
100
500
1000
T - AMBIENT TEMPERATURE ( C)
r - DRAIN "ON" RESISTANCE
DS
Ao
(Ω)
V = 2.5V
GS(off)
V = 4.5V
GS(off)
V = 8.0V
GS(off)
V = -100 mV
V = 0
DS
GS
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 6
Physical Dimensions
Figure 14. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 — P-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
J175 / J176 / MMBFJ175 / MMBFJ176 / MMBFJ177 Rev. 1.6 7
Physical Dimensions (Continued)
Figure 15. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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