TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 1 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Applications
Point-to-Point Radio
VSAT
Test Equipment & Sensors
28-pin 5x5 mm QFN package
Product Features
Functional Block Diagram
RF Frequency Range: 17 27 GHz
IF Frequency: DC 4 GHz
LO Frequency: 6.5 15.5 GHz
LO Input Power: 2 to 9 dBm
Conversion Gain: 15 dB
Noise Figure: 2.5 dB
Package Dimensions: 5.0 x 5.0 x 1.3 mm
General Description
Pin Configuration
The TriQuint TGC4610-SM is a K-Band Image
Reject Downconverter. The TGC4610-SM operates
over an RF frequency range of 17 to 27 GHz and
LO from 6.5 to 15.5 GHz with IF outputs from DC to
4 GHz. This part
pHEMT production process.
The TGC4610-SM integrates an LNA, and image
reject mixer driven by a multiplier. It typically
provides an Input IP3 of 3 dBm at 25 dBm input
power per tone and has a conversion gain of 15 dB
and noise figure of 2.5 dB or less.
The TGC4610-SM is available in a low-cost,
surface mount 28 lead 5x5 mm QFN package and
is ideally suited for Point-to-Point Radio, and K-
Band VSAT Ground Terminal applications.
Lead-free and RoHS compliant.
Evaluation Boards are available upon request.
Pin #
Function Label
1, 7, 8, 14, 15, 21, 22,
28
GND
2, 4, 5, 6, 12, 16, 18,
20, 25, 26
NC
3
RF IN
9
LO IN
10
VDLO1
11
VGX
13
VDLO23
17
IF1
19
IF2
23
VDRF4V
24
VDRF
27
VGRF
Ordering Information
Part No.
ECCN
Description
TGC4610-SM
EAR99
K-band Downconverter
Standard T/R size = 500 pieces on a 7
4610
1232
6425
X2
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 2 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications
Absolute Maximum Ratings
Parameter
Rating
VDRF
6 V
VDLO
6 V
IDRF
150 mA
IDLO
375 mA
VGX, VGRF
-3 to 0 V
Power Dissipation
1.6 W
RF Input Power, C
16.7 dBm
Channel Temperature, Tch
200 C
Storage Temperature
-65 to 125 C
Operation of this device outside the parameter ranges
given above may cause permanent damage.
Recommended Operating Conditions
Parameter
Min
Typ
Max
Units
Operating Temp. Range
-40
+25
+85
C
VDRF
3
V
IDRF
68
mA
VDLO
3
V
IDLO
160
mA
VGRF
-0.65
V
VGX
-1.1
V
LO Input Power
2
9
dBm
Electrical specifications are measured at specified test
conditions. Specifications are not guaranteed over all
recommended operating conditions.
Electrical Specifications
Test conditions unless otherwise noted: IF Input Power = -25 dBm, LO Input Power = 5.5 dBm, VGX = -1.1 V, VDLO = 3 V,
IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Parameter
Conditions
Min
Typ
Max
Units
RF Frequency Range
17
27
GHz
LO Frequency Range
6.5
15.5
GHz
IF Frequency Range
DC
4
GHz
LO Input Power
2
9
dBm
Drain Current, LO (IDLO)
160
mA
Drain Current, RF (IDRF)
68
mA
Conversion Gain
11.5
15
18.5
dB
Input Third Order Intercept
Point (IIP3)
18 to 24 GHz
24 to 28 GHz
0
-2
3
2
dBm
Image Rejection (IMR)
20
dB
Noise Figure
2.5
dB
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 3 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Specifications
Thermal and Reliability Information
Parameter
Condition
Rating
JC, measured to back of package
Tbase = 85 °C
JC = 73.5 °C/W
Channel Temperature (Tch), and Median Lifetime (Tm)
Tbase = 85 °C,
VDRF = 3 V, IDRF = 68 mA
VDLO = 3 V, IDLO = 160 mA
Pdiss = 0.68 W
Tch = 135 °C
Tm = 5.8 E+6
Hours
Channel Temperature (Tch), and Median Lifetime (Tm)
Under RF Drive
Tbase = 85 °C
VDRF = 3 V, IDRF = 68 mA
VDLO = 3 V, IDLO = 220 mA
Pin = -25 dBm
Pdiss = 0.86 W
Tch = 148 °C
Tm = 1.3 E+6
Hours
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 4 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
0
10
20
30
40
50
60
16 18 20 22 24 26 28
Image rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. IF
LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
0
10
20
30
40
50
60
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. IF
LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. IF
LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IF
LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. IF
LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 5 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
0
10
20
30
40
50
10 11 12 13 14 15 16
Image Rejection Ratio (dB)
RF Frequency (GHz)
IMR vs. RF Output and IF Input
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
0
10
20
30
40
50
60
70
6 8 10 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. IF
LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
0
10
20
30
40
50
60
70
6 8 10 12 14 16
2 x LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. IF
LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
0
10
20
30
40
50
60
70
6 8 10 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. IF
LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
0
10
20
30
40
50
60
70
6 8 10 12 14 16
2 x LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. IF
LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. IF
LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. IF
LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 6 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
0
10
20
30
40
50
60
70
6 8 10 12 14 16
3 x LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. IF
LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
0
10
20
30
40
50
60
70
6 8 10 12 14 16
3 x LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. IF
LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 GHz
2 GHz
3 GHz
4 GHz
0
1
2
3
4
5
6
17 19 21 23 25 27
Noise Figure (dB)
RF Frequency (GHz)
Noise Figure vs. RF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
0
1
2
3
4
5
6
17 19 21 23 25 27
Noise Figure (dB)
RF Frequency (GHz)
Noise Figure vs. RF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
10
12
14
16
18
20
1 1.5 2 2.5 3 3.5 4
Conversion Gain (dB)
IF Frequency (GHz)
Conversion Gain vs. IF vs. RF
LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
17 GHz
22 GHz
27 GHz
10
12
14
16
18
20
1 1.5 2 2.5 3 3.5 4
Conversion Gain (dB)
IF Frequency (GHz)
Conversion Gain vs. IF vs. RF
LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
17 GHz
22 GHz
27 GHz
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 7 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB
85 °C
25 °C
-40 °C
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB
85 °C
25 °C
-40 °C
10
15
20
25
30
35
40
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB
85 °C
25 °C
-40 °C
10
15
20
25
30
35
40
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB
85 °C
25 °C
-40 °C
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB
85 °C
25 °C
-40 °C
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB
85 °C
25 °C
-40 °C
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 8 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB
85 °C
25 °C
-40 °C
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB
85 °C
25 °C
-40° C
0
10
20
30
40
50
60
70
46810 12 14 16
2 x LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB
85 °C
25 °C
-40° C
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB
85 °C
25 °C
-40 °C
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB
85 °C
25 °C
-40° C
0
10
20
30
40
50
60
70
46810 12 14 16
2 x LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB
85 °C
25 °C
-40° C
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 9 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB
85 °C
25 °C
-40 °C
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. Temperature
IF = 1 GHz, LO = 2.0 dBm, VGX = -1.1 V, LSB
85 °C
25 °C
-40 °C
0
1
2
3
4
5
6
17 19 21 23 25 27
Noise Figure (dB)
RF Frequency (GHz)
Noise Figure vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB
85° C
25 °C
-40 °C
0
1
2
3
4
5
6
17 19 21 23 25 27
Noise Figure (dB)
RF Frequency (GHz)
Noise Figure vs. RF vs. Temperature
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB
85° C
25 °C
-40 °C
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 10 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 55 to 82 mA, VGRF = -0.7 to -0.6 V.
Data taken with external IF hybrid.
0
10
20
30
40
50
60
70
80
10 11 12 13 14 15 16
Isolation (dB)
LO Frequency (GHz)
I to R Isolation vs. LO vs. IF
Vcontrol = 2 V, LO = 0 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
55 mA
68 mA
82 mA
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
55 mA
68 mA
82 mA
10
15
20
25
30
35
40
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
55 mA
68 mA
82 mA
10
15
20
25
30
35
40
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
55 mA
68 mA
82 mA
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
55 mA
68 mA
82 mA
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
55 mA
68 mA
82 mA
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 11 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 55 to 82 mA, VGRF = -0.7 to -0.6 V.
Data taken with external IF hybrid.
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-5
0
5
10
15
10 11 12 13 14 15 16
Input 1dB Compression (dBm)
RF Frequency (GHz)
Input 1dB Compression vs. RF Output
Vcontrol = 0 V, LO = 6 dBm, USB, 25 °C
1.0 GHz
2.0 GHz
3.0 GHz
3.5 GHz
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
55 mA
68 mA
82 mA
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
55 mA
68 mA
82 mA
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
55 mA
68 mA
82 mA
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
55 mA
68 mA
82 mA
0
10
20
30
40
50
60
70
46810 12 14 16
2 x LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
55 mA
68 mA
82 mA
0
10
20
30
40
50
60
70
46810 12 14 16
2 x LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
55 mA
68 mA
82 mA
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 12 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 55 to 82 mA, VGRF = -0.7 to -0.6 V.
Data taken with external IF hybrid.
0
10
20
30
40
50
60
70
46810 12 14 16
3 x LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
55 mA
68 mA
82 mA
0
10
20
30
40
50
60
70
46810 12 14 16
3 x LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
55 mA
68 mA
82 mA
0
1
2
3
4
5
6
17 19 21 23 25 27
Noise Figure (dB)
RF Frequency (GHz)
Noise Figure vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
55 mA
68 mA
82 mA
0
1
2
3
4
5
6
17 19 21 23 25 27
Noise Figure (dB)
RF Frequency (GHz)
Noise Figure vs. RF vs. IDRF
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
55 mA
68 mA
82 mA
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 13 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, LSB, 25 C
1.1 V
1.2 V
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, USB, 25 C
1.1 V
1.2 V
10
15
20
25
30
35
40
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, LSB, 25 C
1.1 V
1.2 V
10
15
20
25
30
35
40
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, USB, 25 C
1.1 V
1.2 V
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, USB, 25 C
1.1 V
1.2 V
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, LSB, 25 C
1.1 V
1.2 V
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 14 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
0
10
20
30
40
50
60
70
46810 12 14 16
2 x LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. VGX
IF = 1 GHz, LO = 5.5 dBm, LSB, 25 C
1.1 V
1.2 V
0
10
20
30
40
50
60
70
46810 12 14 16
2 x LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. VGX
IF = 1 GHz, LO = 5.5 dBm, USB, 25 C
1.1 V
1.2 V
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. VGX
IF = 1 GHz, LO = 5.5 dBm, USB, 25 C
1.1 V
1.2 V
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. VGX
IF = 1 GHz, LO = 5.5 dBm, LSB, 25 C
1.1 V
1.2 V
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, USB, 25 C
1.1 V
1.2 V
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, LSB, 25 C
1.1 V
1.2 V
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 15 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
0
1
2
3
4
5
6
17 19 21 23 25 27
Noise Figure (dB)
RF Frequency (GHz)
Noise Figure vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, USB, 25 C
1.1 V
1.2 V
0
1
2
3
4
5
6
17 19 21 23 25 27
Noise Figure (dB)
RF Frequency (GHz)
Noise Figure vs. RF vs. VGX
IF = 1 GHz, LO = 5.5 dBm, LSB, 25 C
1.1 V
1.2 V
0
10
20
30
40
50
60
70
46810 12 14 16
3 x LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. VGX
IF = 1 GHz, LO = 5.5 dBm, USB, 25 C
1.1 V
1.2 V
0
10
20
30
40
50
60
70
46810 12 14 16
3 x LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. VGX
IF = 1 GHz, LO = 5.5 dBm, LSB, 25 C
1.1 V
1.2 V
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 16 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. LO
IF = 1 GHz, VGX = -1.1 V, LSB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
10
12
14
16
18
20
16 18 20 22 24 26 28
Conversion Gain (dB)
RF Frequency (GHz)
Conversion Gain vs. RF vs. LO
IF = 1 GHz, VGX = -1.1 V, USB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
10
15
20
25
30
35
40
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. LO
IF = 1 GHz, VGX = 1.1 V, USB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
10
15
20
25
30
35
40
16 18 20 22 24 26 28
Image Rejection (dB)
RF Frequency (GHz)
Image Rejection vs. RF vs. LO
IF = 1 GHz, VGX = -1.1 V, LSB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. LO
IF = 1 GHz, VGX = -1.1 V, LSB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
-4
-2
0
2
4
6
8
10
16 18 20 22 24 26 28
Input IP3 (dBm)
RF Frequency (GHz)
Input IP3 vs. RF vs. LO
IF = 1 GHz, VGX = 1.1 V, USB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 17 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. LO
IF = 1 GHz, VGX = -1.1 V, LSB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. LO
IF = 1 GHz, VGX = -1.1 V, LSB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. LO
IF = 1 GHz, VGX = -1.1 V, LSB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO vs. LO
IF = 1 GHz, VGX = -1.1 V, USB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
2 x LO Isolation vs. LO vs. LO
IF = 1 GHz, VGX = -1.1 V, USB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
-10
-5
0
5
10
15
16 18 20 22 24 26 28
RF Isolation (dB)
RF Frequency (GHz)
RF Isolation vs. RF vs. LO
IF = 1 GHz, VGX = -1.1 V, USB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 18 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
0
10
20
30
40
50
60
70
80
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. LO
IF = 1 GHz, VGX = -1.1 V, USB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
0
10
20
30
40
50
60
70
80
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
3 x LO Isolation vs. LO vs. LO
IF = 1 GHz, VGX = -1.1 V, LSB, 25 C
2.0 dBm
5.5 dBm
9.0 dBm
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO Frequency
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 x LO
2 x LO
3 x LO
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO Frequency
IF = 2 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 x LO
2 x LO
3 x LO
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO Frequency
IF = 1 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 x LO
2 x LO
3 x LO
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO Frequency
IF = 2 GHz, LO = 5.5 dBm, VGX = 1.1 V, USB, 25 C
1 x LO
2 x LO
3 x LO
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 19 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Typical Performance
IF Input Power = -25 dBm, VDLO = 3 V, IDLO = 160 mA, VDRF = 3 V, IDRF = 68 mA, VGRF = -0.65 V.
Data taken with external IF hybrid.
M x N Spurious Outputs for USB
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO Frequency
IF = 3 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 x LO
2 x LO
3 x LO
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO Frequency
IF = 4 GHz, LO = 5.5 dBm, VGX = -1.1 V, LSB, 25 C
1 x LO
2 x LO
3 x LO
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO Frequency
IF = 3 GHz, LO = 5.5 dBm, VGX = 1.1 V, USB, 25 C
1 x LO
2 x LO
3 x LO
0
10
20
30
40
50
60
70
46810 12 14 16
LO Isolation (dB)
LO Frequency (GHz)
LO Isolation vs. LO Frequency
IF = 4 GHz, LO = 5.5 dBm, VGX = -1.1 V, USB, 25 C
1 x LO
2 x LO
3 x LO
RF/LO 0 1 2 3
-3 --- 49 52 51
-2 --- 56 57 63
-1 --- 28 026
0--- 12 014
110 44 23 47
252 50 51 ---
IF = 2.0 GHz; RF = 17 - 27 GHz; LO = 7.5 - 12.5 GHz
RF/LO 0 1 2 3
-3 --- 47 50 ---
-2 --- 53 56 56
-1 --- 30 032
0--- 10 -2 13
110 39 21 49
251 51 51 ---
IF = 4.0 GHz; RF = 17 - 27 GHz; LO = 6.5 - 11.5 GHz
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 20 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Pin Description
TOP VIEW
Pin
Symbol
Description
1, 7, 8, 14, 15, 21,
22, 28
GND
Internal grounding; must be grounded on PCB.
2, 4, 5, 6, 12, 16, 20,
25, 26
NC
No internal connection; must be grounded on PCB
3
RF IN
RF Input matched to 50 ohms, AC Coupled.
9
LO IN
LO Input, matched to 50 ohms, AC coupled.
10
VDLO1
LO Drain Voltage. Bias network is required; see Application Circuit on
page 21 as an example.
11
VGX
Mixer Gate Voltage. Bias network is required; see Application Circuit on
page 21 as an example.
13
VDLO23
LO Drain Voltage. Bias network is required; see Application Circuit on
page 21 as an example.
17
IF1
IF Output matched to 50 ohms, DC coupled.
18
NC
No internal connection; should be left open.
19
IF2
IF Output matched to 50 ohms, DC coupled.
23
VDRF4V
RF Drain Voltage for 4 V operation. Bias network is required; see
Application Circuit on page 21 as an example.
24
VDRF
RF Drain Voltage. Bias network is required; see Application Circuit on
page 21 as an example.
27
VGRF
RF Gate Voltage. Bias network is required; see Application Circuit on
page 21 as an example.
29
GND
Backside Paddle. Multiple vias should be employed to minimize
inductance and thermal resistance; see Mounting Configuration on page
24 for suggested footprint.
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 21 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Application Circuit
Biasing Procedures
Bias up Bias Down
Set VGX to -1.1 V Turn off RF signal
Set VDLO to 3 V Set VDRF to 0 V
Set VGRF to -1.5 V Set VDLO to 0 V
Set VDRF to 3 V Set VGRF to 0 V
Increase VGRF to get IDRF = 68 mA Set VGX to 0 V
Apply LO and RF signals
.
LO Input
4610
YYWW
XXXX
RF Input
VDRF4V
VDLO23
VGRF
IF Output
USB
LSB
VGX
VDLO1
IF Output
VDRF
VDLO1
VDLO23
VDRF Open
4 V
VDRF4V
4 V Operation
3 V Operation
VDRF
VDRF4V Open
VDLO23
VDLO1
3 V
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 22 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Application Circuit
PC Board Layout
thickness with ½ oz copper cladding.
For further technical information, refer to the TGC4610-SM Product Information page.
Note: For 4 V operation, R3 = 22 and R4 = 8.2
Bill of Material
Ref Des
Value
Description
Manufacturer
Part Number
C1 C6
100 pF
Cap, 0402, 50V, 5%, NPO
various
C7 C12
0.01 µF
Cap, 0603, 25V, 5%, COG
various
C13 C18
1 µF
Cap, 0805, 25V, 5%, X5R
various
R1
Res, 0402, 0.05W, 0.1%, SMD
various
R2 R4
Res, 0402, 0.01W, SMD
various
X1
Power Splitter
Mini-Circuits
QCN-19+ or QCN45+
U1
K-Band Downconverter
TriQuint
TGC4610-SM
U1 R1
R2
X1
R3
R4
C1 C2 C3
C7 C9
C8
C12 C13
C14
C5 C6
C4
C10
C11 C12
C16
C18
C17
R1
R2
X1
LSB
Configuration
LSB
Configuration
USB
Configuration
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 23 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Mechanical Information
Package Information and Dimensions
All dimensions are in millimeters.
The TGC4610- 4610
-generated number.
This package is lead-free/RoHS-compliant with a copper alloy base (CDA194), and the plating material on the
leads is NiPdAu. It is compatible with lead-free (maximum 260 °C reflow temperature) soldering processes.
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 24 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Mechanical Information
PCB Mounting Pattern
All dimensions are in millimeters.
Notes:
1. The pad pattern shown has been developed and tested for
optimized assembly at TriQuint Semiconductor. The PCB land
pattern has been developed to accommodate lead and package
tolerances. Since surface mount processes vary from company to
company, careful process development is recommended.
2. Ground / thermal vias are critical for the proper performance of this
device. Vias should use a .35mm diameter drill and have a final
plated thru diameter of .25 mm.
Tape and Reel Information
Tape and reel specifications for this part are also available on the TriQuint website in the
section.
Standard T/R size = 500 pieces on a 7.
MATERIAL
CAVITY (mm)
DISTANCE BETWEEN
CENTERLINE (mm)
CARRIER
TAPE (mm)
COVER
TAPE (mm)
Vendor
Vendor P/N
Length
(A0)
Width
(B0)
Depth
(K0)
Pitch
(P1)
Length
direction
(P2)
Width
Direction
(F)
Width
(W)
Width
(W)
Tek-Pak
QFN0500X0
500F-L500
5.3
5.3
1.65
8.0
2.00
5.50
12.0
9.20
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 25 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Product Compliance Information
ESD Information
ESD Rating: 1A
Value: Passes 250 V and < 500V.
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
Solderability
Compatible with lead-free soldering processes,
260° maximum reflow temperature.
Package lead plating: NiPdAu
The use of no-clean solder to avoid washing after
soldering is recommended.
This package is not compatible with solder
containing lead.
RoHS Compliance
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and
Electronic Equipment).
This product also has the following attributes:
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
MSL Rating
Moisture Sensitivity Level (MSL) MSL1 at 260°C convection
reflow per JEDEC standard IPC/JEDEC J-STD-020.
Recommended Soldering Temperature Profile
TGC4610-SM
K-Band Downconverter
Data Sheet: Rev E 7/11/14
- 26 of 26 -
Disclaimer: Subject to change without notice
© 2014 TriQuint Semiconductor, Inc.
Connecting the Digital World to the Global Network®
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@tqs.com Fax: +1.972.994.8504
For technical questions and application information:
Email: info-networks@tqs.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the
information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information
contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the
entire risk associated with such information is entirely with the user. All information contained herein is subject to
change without notice. Customers should obtain and verify the latest relevant information before placing orders for
TriQuint products. The information contained herein or any use of such information does not grant, explicitly or
implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to
such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe
personal injury or death.
