2016-01-31 2
Version 1.4 / OS-IN-2015-033 SFH 3219
Maximum Ratings (TA = 25 °C)
Characteristics (TA = 25 °C)
Parameter Symbol Values Unit
Operating and storage temperature range Top; Tstg -40 ... 100 °C
Collector-emitter voltage VCE 35 V
Collector current IC15 mA
Collector surge current
(τ < 10 µs)
ICS 75 mA
Total Power dissipation Ptot 165 mW
ESD withstand voltage
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
VESD 2000 V
Thermal resistance for mounting on pcb RthJA 450 K/W
Parameter Symbol Values Unit
Wavelength of max. sensitivity (typ) λS max 990 nm
Spectral range of sensitivity (typ) λ10% (typ) 450
... 1150
nm
Radiant sensitive area (typ) A 0.038 mm2
Dimensions of chip area (typ) L x W (typ) 0.45 x
0.45
mm x
mm
Half angle (typ) ϕ ± 25 °
Capacitance
(VCE = 0 V, f = 1 MHz, E = 0)
(typ) CCE 5 pF
Photocurrent
(λ = 950 nm, Ee = 0.1 mW/cm2, VCE = 5 V)
IPCE ≥ 63 µA
Dark current
(VCE = 20 V, E = 0)
(typ (max)) ICE0 1 (≤ 50) nA
Rise and fall time
(IC = 1 mA, VCC = 5 V, RL = 1 kΩ)
(typ) tr, tf7 µs
Collector-emitter saturation voltage
(IC = 20 μA, Ee = 0.1 mW/cm2)
(typ) VCEsat 150 mV