T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 1 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Applications
• Military radar
• Civilian radar
• Professional and military radio communications
• Test instrumentation
• Wideband or narrowband amplifiers
• GPS Communications
• Avionics
Ordering Information
Part ECCN Description
T1G2028536-FL
EAR99
Packaged part
Flanged
T1G2028536-FL-
EVB1 EAR99 1.2 – 1.4 GHz
Evaluation Board
Functional Block Diagram
Product Features
• Frequency: DC to 2.0 GHz
• Output Power (P
3dB
): 260 W at 1.2 GHz
• Linear Gain: 18 dB at 1.2 GHz
• Operating Voltage: 36 V
• Low thermal resistance package
Pin Configuration
Pin No. Label
1 V
D
/ RF OUT
2 V
G
/ RF IN
Flange Source
General Description
The TriQuint T1G2028536-FL is a 285 W (P
3dB
) discrete
GaN on SiC
HEMT which operates from DC to 2 GHz.
The device is constructed with TriQuint’s proven
TQGaN25HV process, which features advanced field
plate techniques to optimize power and efficiency at high
drain bias operating conditions. This optimization can
potent
ially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 2 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Absolute Maximum Ratings
Parameter Value
Breakdown Voltage (BV
DG
) 145 V (Min.)
Drain Gate Voltage (V
DG
) 48 V
Gate Voltage Range (V
G
) -7 to 0 V
Drain Current (I
D
) 24 A
Gate Current (I
G
) -57 to 67 mA
Power Dissipation (P
D
) 260 W
RF Input Power, CW,
T = 25°C (P
IN
) 47 dBm
Channel Temperature (T
CH
) 275 °C
Mounting Temperature
(30 Seconds) 320 °C
Storage Temperature -40 to 150 °C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device
at these conditions is not implied.
Recommended Operating Conditions
Parameter Value
Drain Voltage (V
D
) 36 V (Typ.)
Drain Quiescent Current (I
DQ
) 576 mA (Typ.)
Peak Drain Current ( I
D
) 1.33 A (Typ.)
Gate Voltage (V
G
) -3.0 V (Typ.)
Channel Temperature (T
CH
) 250 °C (Max)
Power Dissipation, CW (P
D
) 226 W
Power Dissipation, Pulse (P
D
) 288 W
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
RF Characterization – Load Pull Performance at 2.0 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 36 V, I
DQ
= 576 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 19.4 dB
P
3dB
Output Power at 3 dB Gain Compression 268.9 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 56.3 %
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression
55.1 %
G
3dB
Gain at 3 dB Compression
16.4 dB
Notes:
1. V
DS
= 36 V, I
DQ
= 576 mA; Pulse: 300µs, 10%
RF Characterization – Load Pull Performance at 1.0 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 36 V, I
DQ
= 576 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 20.8 dB
P
3dB
Output Power at 3 dB Gain Compression 316.0 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 66.7 %
PAE
3dB
Power-Added Efficiency at 3 dB Gain
Compression
65.6 %
G
3dB
Gain at 3 dB Compression
17.8 dB
Notes:
1. V
DS
= 36 V, I
DQ
= 576 mA; Pulse: 300µs, 10%
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 3 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
RF Characterization – Performance at 1.2 GHz
(1, 2)
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 36 V, I
DQ
= 576 mA
Symbol Parameter Min Typical Max Units
G
LIN
Linear Gain 17.0 18.7 dB
P
3dB
Output Power at 3 dB Gain Compression 230.0 264.5 W
DE
3dB
Drain Efficiency at 3 dB Gain Compression 49.0 54.0 %
G
3dB
Gain at 3 dB Compression
14.0 15.7 dB
Notes:
1. Performance at 1.2 GHz in the 1.2 to 1.4 GHz Evaluation Board
2. V
DS
= 36 V, I
DQ
= 576 mA; Pulse: 300µs, 10%
RF Characterization – Narrow Band Performance at 1.2 GHz
(1)
Test conditions unless otherwise noted: T
A
= 25 °C, V
D
= 36 V, I
DQ
= 576 mA
Symbol Parameter Typical
VSWR Impedance Mismatch Ruggedness 10:1
Notes:
1. V
DS
= 36 V, I
DQ
= 576 mA, CW at P
1dB
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 4 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Thermal and Reliability Information
Parameter Test Conditions Value Units
Thermal Resistance (θ
JC
) Vd = 36V, DC at 85°C Case
CW
0.73 °C/W
Channel Temperature (T
CH
) 250 °C
Thermal Resistance (θ
JC
) Vd = 36 V, DC at 85°C Case
100 usec, 10% duty cycle
0.36 °C/W
Channel Temperature (T
CH
) 167 °C
Thermal Resistance (θ
JC
) Vd = 32 V, DC at 85°C Case
100 usec, 20% duty cycle
0.39 °C/W
Channel Temperature (T
CH
) 175 °C
Thermal Resistance (θ
JC
) Vd = 32 V, DC at 85°C Case
300 usec, 10% duty cycle
0.43 °C/W
Channel Temperature (T
CH
) 184 °C
Thermal Resistance (θ
JC
) Vd = 32 V, DC at 85°C Case
300 usec, 20% duty cycle
0.46 °C/W
Channel Temperature (T
CH
) 192 °C
Notes:
Thermal resistance measured to bottom of package
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 5 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Median Lifetime
Maximum Channel Temperature
T
BASE
= 85°C, P
D
= 288 W
140.0
160.0
180.0
200.0
220.0
240.0
260.0
280.0
300.0
320.0
1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01
Maximum Channel Temperature (oC)
Pulse Width (sec)
Max. Channel Temperature vs. Pulse Width
5% Duty Cycle
10% Duty Cycle
20% Duty Cycle
50% Duty Cycle
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 6 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Load Pull Smith Charts
(1, 2)
RF performance that the device typically exhibits when placed in the specified impedance
environment. The impedances are not
the impedances of the device, they are the impedances presented to the device via an RF circuit or load-
pull system. The
impedances listed follow an optimized trajectory to maintain high power and high efficiency.
Notes:
1. Test Conditions: V
DS
= 36 V, I
DQ
= 576 mA
2. Test Signal: Pulse Width = 100 µsec, Duty Cycle = 20%
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 7 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Typical Performance
Performance is based on compromised impedance point and measured at DUT reference plane.
40 42 44 46 48 50 52 54 56
18
19
20
21
22
23
24
25
26
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
600 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S
= 1.91 + j0.06 Ω
Z
L
= 1.39 + j0.54 Ω
40 42 44 46 48 50 52 54 56
18
19
20
21
22
23
24
25
26
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
800 MHz, 300 usec 10%, Vds = 36 V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S
= 0.84 - j0.48 Ω
Z
L
= 1.48 + j1.01 Ω
40 42 44 46 48 50 52 54 56
14
15
16
17
18
19
20
21
22
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
1000 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S
= 1.58 - j2.24 Ω
Z
L
= 1.40 + j0.26 Ω
40 42 44 46 48 50 52 54 56
14
15
16
17
18
19
20
21
22
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
1500 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S
= 9.73 - j2.20 Ω
Z
L
= 1.47 - j0.15 Ω
40 42 44 46 48 50 52 54 56
14
15
16
17
18
19
20
21
22
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
40 42 44 46 48 50 52 54 56
0
10
20
30
40
50
60
70
80
Pout [dBm]
Gain [dB]
DrEff. & PAE [%]
T1G2028536-FL Gain DrEff. and PAE vs. Pout
2000 MHz, 300 usec 10%, Vds = 36V, Idq = 576 mA
Gain
DrEff.
PAE
Z
S
= 1.42 + j1.35 Ω
Z
L
= 1.48 - j1.02 Ω
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 8 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Performance Over Temperature
(1, 2)
Performance measured in TriQuint’s 1.2 GHz to 1.4 GHz Evaluation Board at 3 dB compression.
Notes:
1. Test Conditions: V
DS
= 36 V, I
DQ
= 576 mA
2. Test Signal: Pulse Width = 300 µs, Duty Cycle = 10%
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 9 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Evaluation Board Performance
(1, 2)
Performance at 3 dB Compression
Notes:
1. Test Conditions: V
DS
= 36 V, I
DQ
= 576 mA
2. Test Signal: Pulse Width = 300 µs, Duty Cycle = 10 %
Bias-down Procedure
Turn off RF signal
Turn off V
D
and wait 1 second to allow drain capacitor
dissipation
Turn off V
G
Application Circuit
Bias-up Procedure
Set gate voltage (V
G
) to -5.0V
Set drain voltage (V
D
) to 36 V
Slowly increase V
G
until quiescent I
D
is 576 mA.
Apply RF signal
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 10 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Evaluation Board Layout
Top RF layer is 0.020” thick Rogers RO4350, ɛ
r
= 3.48. The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.
Bill of Materials
Reference Design
Value Qty
Manufacturer Part Number
C1, C2, C7, C8, C9, C10
27 pF 6 ATC 600S270FW250XT
C3, C5 3.9 pF 2 ATC 600S3R9AW250XT
C4, C6 4.7 pF 2 ATC 600S4R7AW250XT
C11, C12, C13, C14 2400 pF 4 Murata C08BL242X-5UN-X0T
C15, C16, C17, C18 100 pF 4 ATC 600S101FW250XT
C19, C20, C21, C22 0.01 uF 4 Kemet C1206C103KRAC7800
C23, C24, C25, C26 1 uF 4 Allied 18121C105KAT2A
C27 330 uF 1 Cornell Dubilier AFK337M2AR44T-F
R1, R2, R3 12.1 ohms 3 Vishay Dale CRCW120612R1FKTA
R4, R5 1000 ohms
2 Vishay Dale CRCW12061K00FKTA
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 11 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Pin Layout
Note:
The T1G2028536-FL will be marked with the “T1G2028536-FL” designator and a lot code marked below the part designator.
The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the
assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number.
Pin Description
Pin Symbol Description
1 V
D
/ RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 10 as an
example.
2 V
G
/ RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 10 as an
example.
3 Flange Source connected to ground; see EVB Layout on page 10 as an example.
Notes:
Thermal resistance measured to bottom of package
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 12 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Mechanical Information
All dimensions are in millimeters.
Note:
This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free
(maximum 260 °C reflow temperature) and tin-lead (maximum 245°C reflow temperature) soldering processes.
Datasheet: Rev A 11-21-13
© 2013 TriQuint
Product Compliance Information
ESD Sensitivity Ratings
Caution! ESD-Sensitive
Device
ESD Rating: TBD
Value:
TBD
Test: Human Body Model (HBM)
Standard: JEDEC Standard JESD22-
A114
MSL Rating
Level 3 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 3 at 260°C per
JEDEC standard IPC/JEDEC J-STD-020.
ECCN
US Department of Commerce EAR99
Recommended Soldering Temperature Profile
T1G2028536
285W, 36V DC –
2 GHz, GaN RF Power Transistor
- 13 of 14 -
Disclaimer: Subject to change without notice
Product Compliance Information
Device
A114
Solderability
Compatible with the latest version of J
free solder, 260° C
RoHs Compliance
This part is
compliant with EU 2002/95/EC
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
• Lead Free
•
Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C
15
H
12
Br
4
0
2
) Free
• PFOS Free
• SVHC Free
The part is rated Moisture Sensitivity Level 3 at 260°C per
Recommended Soldering Temperature Profile
T1G2028536
-FL
2 GHz, GaN RF Power Transistor
Disclaimer: Subject to change without notice
www.triquint.com
Compatible with the latest version of J
-STD-
020, Lead
compliant with EU 2002/95/EC
RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
Halogen Free (Chlorine, Bromine)
) Free
T1G2028536-FL
285W, 36V DC – 2 GHz, GaN RF Power Transistor
Datasheet: Rev A 11-21-13
- 14 of 14 -
Disclaimer: Subject to change without notice
© 2013 TriQuint www.triquint.com
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information
about TriQuint:
Web: www.triquint.com Tel: +1.972.994.8465
Email: info-sales@triquint.com Fax: +1.972.994.8504
For technical questions and application information: Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable.
TriQuint makes no warranties regarding the information
contained herein.
TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein.
The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user.
All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does
not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
