DMN10H170SVTQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID Max TA = +25C 160m @ VGS = 10V 2.6A 200m @ VGS = 4.5V 2.3A BVDSS PRODUCT INFORMATION ADVANCED NEW 100V Features and Benefits Description Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) TSOT26 D D 1 6 D D 2 5 D G 3 4 S G Top View Top View Pin-Out S Equivalent Circuit Ordering Information (Note 5) Part Number DMN10H170SVTQ-7 DMN10H170SVTQ-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMN10H170SVTQ Document number: DS38276 Rev. 2 - 2 1 of 8 www.diodes.com December 2015 (c) Diodes Incorporated DMN10H170SVTQ Marking Information TSOT26 PRODUCT INFORMATION ADVANCED NEW Date Code Key Year Code Month Code 2014 B Jan 1 YM 11N 2015 C Feb 2 11N = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: C = 2015) M = Month (ex: 9 = September) Mar 3 2016 D Apr 4 2017 E May 5 Jun 6 2018 F Jul 7 2019 G Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D Maximum Ratings (@TA = +25C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS 100 V Gate-Source Voltage VGSS 20 V ID 2.6 2.1 A Pulsed Drain Current (10s Pulse, Duty Cycle 1%) IDM 11.2 A Maximum Body Diode Continuous Current (Note 7) IS 2.0 A Symbol Value 1.2 1.7 101 73 Unit Continuous Drain Current (Note 7), VGS = 10V Steady State TA = +25C TA = +70C Thermal Characteristics Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case (Note 6) (Note 7) (Note 6) (Note 7) (Note 7) Operating and Storage Temperature Range Notes: PD RJA RJC 15 TJ, TSTG -55 to +150 W C/W C 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMN10H170SVTQ Document number: DS38276 Rev. 2 - 2 2 of 8 www.diodes.com December 2015 (c) Diodes Incorporated DMN10H170SVTQ Electrical Characteristics (@TA = +25C, unless otherwise specified.) PRODUCT INFORMATION ADVANCED NEW Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 250A Zero Gate Voltage Drain Current IDSS 1.0 A VDS = 100V, VGS = 0V Gate-Body Leakage IGSS 100 nA VGS = 20V, VDS = 0V Gate Threshold Voltage VGS(TH) 1.0 2.0 3.0 V VDS = VGS, ID = 250A Static Drain-Source On-Resistance RDS(ON) 115 160 124 200 VSD 0.9 1.0 Input Capacitance Ciss 1,167 Output Capacitance Coss 36 Reverse Transfer Capacitance Crss 25 Gate Resistance Rg 1.3 Total Gate Charge (VGS = 4.5V) Qg 4.9 Total Gate Charge (VGS = 10V) Qg 9.7 Gate-Source Charge Qgs 2.0 Gate-Drain Charge Qgd 2.0 Turn-On Delay Time tD(ON) 10 Turn-On Rise Time tR 11 Turn-Off Delay Time tD(OFF) 42 tF 12 ON CHARACTERISTICS (Note 8) Diode Forward Voltage m VGS = 10V, ID = 5.0A VGS = 4.5V, ID = 5.0A V VGS = 0V, IS = 10A pF VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 80V, ID = 12.8A ns VDD = 50V, VGS = 10V, Rg = 25, ID = 12.8A ns nC VGS = 0V, IS=12.8A, di/dt=100A/s DYNAMIC CHARACTERISTICS (Note 9) Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: tRR QRR 30 35 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN10H170SVTQ Document number: DS38276 Rev. 2 - 2 3 of 8 www.diodes.com December 2015 (c) Diodes Incorporated DMN10H170SVTQ 10.0 10 8.0 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 4.5V VGS = 4.0V VGS = 3.5V 6.0 VGS = 3.2V 4.0 VGS = 3.0V 2.0 6 125 4 85 150 2 25 -55 0.0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 2 0.14 0.13 0.12 0.11 VGS = 4.5V 0.1 0.09 VGS = 10V 0.08 0.07 1 2 3 4 5 6 7 8 ID, DRAIN-SOURCE CURRENT (A) 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 9 VGS = 10V, ID = 5A 2 1.8 1.6 1.4 1.2 VGS = 4.5V, ID = 5A 1 0.8 0.6 0.4 -50 RDS(ON), DRAIN-SOURCE ON-ESISTANCE () 2.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 5. On-Resistance Variation with Junction Temperature DMN10H170SVTQ Document number: DS38276 Rev. 2 - 2 4 of 8 www.diodes.com 4 VGS = 10V 0.26 150 0.22 125 0.18 85 0.14 0.1 25 0.06 -55 0.02 0 4 6 8 10 ID, DRAIN CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Junction Temperature 10 2.4 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.3 Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) PRODUCT INFORMATION ADVANCED NEW VGS = 10.0V 2 0.3 0.25 0.2 VGS = 4.5V, ID = 5A 0.15 0.1 VGS = 10V, ID = 5A 0.05 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature 150 December 2015 (c) Diodes Incorporated DMN10H170SVTQ VGS = 0V 2.2 ID = 1mA IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 10 2 1.8 ID = 250A 1.6 1.4 8 6 4 TJ = 125oC TJ = 85oC TJ = 25oC 2 TJ = 150oC 1.2 TJ = -55oC 0 1 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. Gate Threshold Variation vs. Junction Temperature 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8. Diode Forward Voltage vs. Current 1.5 10 10000 f=1MHz 9 -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) Ciss 1000 100 Coss 8 VDS = 80V I D = 12.8A 7 6 5 4 3 2 1 Crss 0 0 10 0 10 20 30 40 50 60 70 80 90 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Typical Junction Capacitance 2 4 6 8 Qg , TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 10 100 RDS(on) Limited 10 ID , DRAIN CURRENT (A) PRODUCT INFORMATION ADVANCED NEW 2.4 1 DC PW = 10s PW = 1s 0.1 PW = 100ms TJ(m ax) = 150C PW = 10ms 0.01 TA = 25C V GS = 10V Single Pulse DUT on 1 * MRP Board 0.001 0.1 PW = 1ms PW = 100s 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMN10H170SVTQ Document number: DS38276 Rev. 2 - 2 1000 5 of 8 www.diodes.com December 2015 (c) Diodes Incorporated DMN10H170SVTQ r(t), TRANSIENT THERMAL RESISTANCE PRODUCT INFORMATION ADVANCED NEW 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja(t) = r(t) * Rthja Rthja = 101C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance DMN10H170SVTQ Document number: DS38276 Rev. 2 - 2 6 of 8 www.diodes.com December 2015 (c) Diodes Incorporated DMN10H170SVTQ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TSOT26 PRODUCT INFORMATION ADVANCED NEW D e1 01(4x) E1/2 E/2 E1 c E Gauge Plane 0 L e Seating Plane L2 01(4x) b A2 A1 A Seating Plane TSOT26 Dim Min Max Typ A 1.00 A1 0.010 0.100 A2 0.840 0.900 D 2.800 3.000 2.900 E 2.800 BSC E1 1.500 1.700 1.600 b 0.300 0.450 c 0.120 0.200 e 0.950 BSC e1 1.900 BSC L 0.30 0.50 L2 0.250 BSC 0 8 4 1 4 12 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TSOT26 C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y X DMN10H170SVTQ Document number: DS38276 Rev. 2 - 2 7 of 8 www.diodes.com December 2015 (c) Diodes Incorporated DMN10H170SVTQ IMPORTANT NOTICE PRODUCT INFORMATION ADVANCED NEW DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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