DMN10H170SVTQ-7 - DIODES INC

DMN10H170SVTQ

Document number: DS38276 Rev. 2 - 2

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DMN10H170SVTQ

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100V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

BVDSS

RDS(ON) Max

ID Max

TA = +25°C

100V

160GS = 10V

2.6A

200GS = 4.5V

2.3A

Description

This new generation MOSFET is designed to minimize the on-state

resistance (RDS(ON)), yet maintain superior switching performance,

making it ideal for high-efficiency power management applications.

Applications

 Power Management Functions

 Battery Operated Systems and Solid-State Relays

 Drivers: Relays, Solenoids, Lamps, Hammers, Displays,

Memories, Transistors, etc.

Features and Benefits

 Low Gate Threshold Voltage

 Low Input Capacitance

 Fast Switching Speed

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: TSOT26

 

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminal Connections: See Diagram

 Terminals: Finish - Matte Tin Annealed over Copper Leadframe.

Solderable per MIL-STD-202, Method 208

 Weight: 0.015 grams (Approximate)

Ordering Information (Note 5)

Part Number

Case

Packaging

DMN10H170SVTQ-7

TSOT26

3,000/Tape & Reel

DMN10H170SVTQ-13

TSOT26

10,000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html ogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-ucts are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

TSOT26

Top View

Pin-Out

Equivalent Circuit

1

2

3

6

5

4

D D

G S

D

S

G

DMN10H170SVTQ

Document number: DS38276 Rev. 2 - 2

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December 2015

DMN10H170SVTQ

NEW PROD UCT

ADVA N C ED I N F ORM ATI O N

Marking Information

TSOT26

Date Code Key

Year

2014

2015

2016

2017

2018

2019

2020

2021

Code

B

C

D

E

F

G

H

I

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 7), VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

2.6

2.1

A

Pulsed Drain Current (10s Pulse, Duty Cycle ≦1%)

IDM

11.2

A

Maximum Body Diode Continuous Current (Note 7)

IS

2.0

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation

(Note 6)

PD

1.2

W

(Note 7)

1.7

Thermal Resistance, Junction to Ambient

(Note 6)

RJA

101

°C/W

(Note 7)

73

Thermal Resistance, Junction to Case

(Note 7)

RJC

15

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

11N = Product Type Marking Code

YM = Date Code Marking

Y  = Year (ex: C = 2015)

M = Month (ex: 9 = September)

11N

YM

DMN10H170SVTQ

Document number: DS38276 Rev. 2 - 2

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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

100



V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS



1.0

µA

VDS = 100V, VGS = 0V

Gate-Body Leakage

IGSS



±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1.0

2.0

3.0

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)



115

160

m

VGS = 10V, ID = 5.0A



124

200

VGS = 4.5V, ID = 5.0A

Diode Forward Voltage

VSD



0.9

1.0

V

VGS = 0V, IS = 10A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss



1,167



pF

VDS = 25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss



36



Reverse Transfer Capacitance

Crss



25



Gate Resistance

Rg



1.3





VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg



4.9



nC

VDS = 80V, ID = 12.8A

Total Gate Charge (VGS = 10V)

Qg



9.7



Gate-Source Charge

Qgs



2.0



Gate-Drain Charge

Qgd



2.0



Turn-On Delay Time

tD(ON)



10



ns

VDD = 50V, VGS = 10V,

Rg = 25, ID = 12.8A

Turn-On Rise Time

tR



11



Turn-Off Delay Time

tD(OFF)



42



Turn-Off Fall Time

tF



12



Reverse Recovery Time

tRR



30



ns

VGS = 0V, IS=12.8A, di/dt=100A/µs

Reverse Recovery Charge

QRR



35



nC

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

DMN10H170SVTQ

Document number: DS38276 Rev. 2 - 2

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0.0

2.0

4.0

6.0

8.0

10.0

0 0.5 1 1.5 2

ID, DRAIN CURRENT (A)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

VGS = 3.0V

VGS = 3.2V

VGS = 10.0V

VGS = 4.5V

VGS = 3.5V

VGS = 4.0V

0.07

0.08

0.09

0.1

0.11

0.12

0.13

0.14

1 2 3 4 5 6 7 8 9 10

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

ID, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

VGS = 10V

VGS = 4.5V

0.02

0.06

0.1

0.14

0.18

0.22

0.26

0.3

0 2 4 6 8 10

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

ID, DRAIN CURRENT (A)

Figure 4. Typical On-Resistance vs. Drain Current and

Junction Temperature

-55℃

25℃

85℃

150℃

125℃

VGS = 10V

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

TJ, JUNCTION TEMPERATURE (℃)

Figure 5. On-Resistance Variation with Junction

Temperature

VGS = 4.5V, ID = 5A

VGS = 10V, ID = 5A

0

0.05

0.1

0.15

0.2

0.25

0.3

-50 -25 025 50 75 100 125 150

RDS(ON), DRAIN-SOURCE ON-ESISTANCE ()

TJ, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Junction

Temperature

VGS = 4.5V, ID = 5A

VGS = 10V, ID = 5A

0

2

4

6

8

10

1.5 2 2.5 3 3.5 4

ID, DRAIN CURRENT (A)

VGS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

VDS = 5V

-55℃

25℃

85℃

125℃

150℃

DMN10H170SVTQ

Document number: DS38276 Rev. 2 - 2

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Q , TOTAL GATE CHARGE (nC)

g

Figure 10 Gate-Charge Characteristics

-V , GATE-SOURCE VOLTAGE (V)

GS

0

1

2

3

4

5

6

7

8

9

10

0 2 4 6 8 10

V = 80V

DS

I = 12.8A

D

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 11 SOA, Safe Operation Area

I , DRAIN CURRENT (A)

D

0.001

0.01

0.1

1

10

100

0.1 1 10 100 1000

P = 100µs

W

P = 1ms

W

P = 10ms

W

P = 100ms

W

P = 1s

W

P = 10s

W

DC

RDS(on)

Limited

T = 150°C

J(max)

T = 25°C

A

V = 10V

GS

Single Pulse

DUT on 1 * MRP Board

10

100

1000

10000

010 20 30 40 50 60 70 80 90 100

CT, JUNCTION CAPACITANCE (pF)

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Typical Junction Capacitance

f=1MHz

Crss

Coss

Ciss

1

1.2

1.4

1.6

1.8

2

2.2

2.4

-50 -25 025 50 75 100 125 150

VGS(TH), GATE THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (℃)

Figure 7. Gate Threshold Variation vs. Junction

Temperature

ID = 250A

ID = 1mA

0

2

4

6

8

10

0 0.3 0.6 0.9 1.2 1.5

IS, SOURCE CURRENT (A)

VSD, SOURCE-DRAIN VOLTAGE (V)

Figure 8. Diode Forward Voltage vs. Current

TJ= 125oCTJ= 85oC

TJ= 25oC

TJ= -55oC

VGS = 0V

TJ= 150oC

DMN10H170SVTQ

Document number: DS38276 Rev. 2 - 2

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t1, PULSE DURATION TIME (sec)

Figure 12 Transient Thermal Resistance

r(t), TRANSIENT THERMAL RESISTANCE

0.001

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

Single Pulse

D = 0.005

D = 0.01

D = 0.02

D = 0.05

D = 0.1

D = 0.3

D = 0.5

D = 0.7

D = 0.9

Rthja(t) = r(t) * Rthja

Rthja = 101°C/W

Duty Cycle, D = t1/ t2

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Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.

TSOT26

Dim

Min

Max

Typ

A



1.00



A1

0.010

0.100



A2

0.840

0.900



D

2.800

3.000

2.900

E

2.800 BSC

E1

1.500

1.700

1.600

b

0.300

0.450



c

0.120

0.200



e

0.950 BSC

e1

1.900 BSC

L

0.30

0.50



L2

0.250 BSC

θ

0°

8°

4°

θ1

4°

12°



All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

TSOT26

Dimensions

Value (in mm)

C

0.950

X

0.700

Y

1.000

Y1

3.199

D

E1

E1/2

e1

E

E/2

e

A

A2

A1

Seating Plane

0

L2

L

Gauge Plane

01(4x)

c

b

Seating Plane

Y1

C

X

Y

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IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

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all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the

final and determinative format released by Diodes Incorporated.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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