1
Subject to change without notice.
www.cree.com/RF
CG2H40025
25 W, 28 V RF Power GaN HEMT
Crees CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility
transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general
purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efciency, high gain and wide bandwidth capabilities
making the CG2H40025 ideal for linear and compressed amplier circuits. The
transistor is available in a screw-down, ange package and solder-down, pill
packages.
Rev 2.0 – November 2018
FEATURES
Up to 6 GHz Operation
17 dB Small Signal Gain at 2.0 GHz
15 dB Small Signal Gain at 4.0 GHz
30 W typical PSAT
70 % Efciency at PSAT
28 V Operation
APPLICATIONS
2-Way Private Radio
Broadband Ampliers
Cellular Infrastructure
Test Instrumentation
Class A, AB, Linear ampliers suitable for
OFDM, W-CDMA, EDGE, CDMA waveforms
Package Type: 440196 and 440166
PN: CG2H40025P and CG2H40025F
2CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units Conditions
Drain-Source Voltage VDSS 120 Volts 25˚C
Gate-to-Source Voltage VGS -10, +2 Volts 25˚C
Storage Temperature TSTG -65, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 7.0 mA 25˚C
Maximum Drain Current1IDMAX 3 A 25˚C
Soldering Temperature2TS245 ˚C
Screw Torque τ60 in-oz
Thermal Resistance, Junction to Case3RθJC 3.8 ˚C/W 85˚C
Case Operating Temperature3,4 TC-40, +150 ˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www,cree.com/RF/Document-Library
3 Measured for the CG2H40025F at PDISS = 28.8 W.
4 See also, the Power Dissipation De-rating Curve on Page 6.
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.8 -3.0 -2.3 VDC VDS = 10 V, ID = 7.2 mA
Gate Quiescent Voltage VGS(Q) -2.7 VDC VDS = 28 V, ID = 250 mA
Saturated Drain Current IDS 5.8 7.0 A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 120 VDC VGS = -8 V, ID = 7.2 mA
RF Characteristics2 (TC = 25˚C, F0 = 3.7 GHz unless otherwise noted)
Small Signal Gain GSS 13.0 14.8 dB VDD = 28 V, IDQ = 250 mA
Power Output3PSAT 25 34 W VDD = 28 V, IDQ = 250 mA
Drain Efciency4η57 71 % VDD = 28 V, IDQ = 250 mA, PSAT
Output Mismatch Stress VSWR 10 : 1 Y
No damage at all phase angles,
VDD = 28 V, IDQ = 250 mA,
POUT = 25 W CW
Dynamic Characteristics
Input Capacitance CGS 7.5 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS 2.4 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD 0.4 pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in CG2H40025-AMP.
3 PSAT is dened as IG = 0.72 mA.
4 Drain Efciency = POUT / PDC
3CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 1. - Small Signal Gain and Return Loss vs Frequency
of the CG2H40025F in the CG2H40025-AMP
Figure 2. - PSAT, Gain, and Drain Efciency vs Frequency of the
CG2H40025F in the CG2H40025-AMP
VDD = 28 V, IDQ = 250 mA
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
40
3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80
Drain Efficiency (%)
PSAT (W), Gain (dB)
Frequency (GHz)
PS AT, Gain, and Drain Efficiency vs Frequency of the CG2H40025F
in the CG2H40025-AMP VDD = 28V, IDQ = 250mA
Psat
Gain
Drain Eff
E󰀩ciency
Gain
PSAT
-40
-30
-20
-10
0
10
20
2.5 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5
Amplitude (dB)
Frequency (GHz)
Small Signal Gain and Return Loss vs Frequency of the
CG2H40025F in the CG2H40025-AMP
Small Signal Gain
Input Return Loss
Output Return Loss
4CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Performance
Figure 3. - Swept CW Data of CG2H40025 vs. Output Power in CG2H40025-AMP
VDD = 28 V, IDQ = 250 mA, Freq = 3.6 GHz
Figure 4. - Maximum Available Gain and K Factor of the CG2H40025
VDD = 28 V, IDQ = 250 mA
0
0.4
0.8
1.2
1.6
10
15
20
25
30
0.5 1.5 2.5 3.5 4.5 5.5
K Factor
MAG (dB)
Frequency (GHz)
Maximum Available Gain and K Factor of the CG2H40025
VDD = 28V, IDQ = 250mA
Gmax
K Factor
5CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Noise Performance
Figure 5. - Simulated Minimum Noise Figure and Noise Resistance vs Frequency of the CG2H40025F
VDD = 28 V, IDQ = 250 mA
Electrostatic Discharge (ESD) Classications
Parameter Symbol Class Test Methodology
Human Body Model HBM 1A > 250 V JEDEC JESD22 A114-D
Charge Device Model CDM 1 < 200 V JEDEC JESD22 C101-C
0
10
20
30
40
0
0.5
1
1.5
2
0.5 1.5 2.5 3.5 4.5 5.5
Noise Resistance (Ohms)
Minimum Noise Figure (dB)
Frequency (GHz)
Simulated Minimum Noise Figure and Noise Resistance vs
Frequency of the CG2H40025
VDD = 28V, IDQ = 250mA
Min Noise Figure
Noise Resistance
6CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Source and Load Impedances
Frequency (MHz) Z Source Z Load
500 7.75 + j15.5 20 + j5.2
1000 3.11 + j5.72 17 + j6.66
1500 2.86 + j1.63 16.8 + j3.2
2500 2.4 - j3.52 8.02 + j4.32
3500 1.31 - j7.3 5.85 - j0.51
Note 1. VDD = 28V, IDQ = 250mA in the 440166 package.
Note 2. Optimized for power gain, PSAT and PAE.
Note 3. When using this device at low frequency, series resistors should be
used to maintain amplier stability.
CG2H40025 Power Dissipation De-rating Curve
Note 1. Area exceeds Maximum Case Operating Temperature (See Page 2).
D
Z Source Z Load
G
S
20
25
30
Power Dissipation (W)
CGH40025F CW Power Dissipation De-rating Curve
0
5
10
15
0 25 50 75 100 125 150 175 200 225 250
Power Dissipation (W)
Maximum Case Temperature (°C)
Note 1
7CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CG2H40025-AMP Demonstration Amplier Circuit Schematic
CG2H40025-AMP Demonstration Amplier Circuit Outline
8CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
CG2H40025-AMP Demonstration Amplier Circuit Bill of Materials
Designator Description Qty
R2 RES,1/16W,0603,1%,47 OHMS 1
R1 RES,1/16W,0603,1%,100 OHMS 1
C6 CAP, 470PF, 5%,100V, 0603 1
C16 CAP, 33 UF, 20%, G CASE 1
C15 CAP, 1.0UF, 100V, 10%, X7R, 1210 1
C8 CAP 10UF 16V TANTALUM 1
C13 CAP, 100.0pF, +/-5%, 0603 1
C1 CAP, 0.8pF, +/-0.1pF, 0603 1
C2 CAP, 0.5pF, +/-0.05pF, 0603 1
C9,C10 CAP, 1.0pF, +/-0.1pF, 0603 2
C4,C11 CAP, 10.0pF,+/-5%, 0603 2
C5,C12 CAP, 39pF, +/-5%, 0603 2
C7,C14 CAP,33000PF, 0805,100V, X7R 2
J3,J4 CONN SMA STR PANEL JACK RECP 2
J1 HEADER RT>PLZ .1CEN LK 5POS 1
- PCB, RO4350B, Er = 3.48, h = 20 mil 1
- CG2H40025F or CG2H40025P 1
CG2H40025F-AMP Demonstration Amplier Circuit
9CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CG2H40025
(Small Signal, VDS = 28 V, IDQ = 100 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
0.5 0.869 -144.08 16.82 95.26 0.024 10.68 0.425 -137.01
0.6 0.864 -151.15 14.18 89.71 0.024 6.25 0.431 -142.15
0.7 0.861 -156.57 12.22 84.97 0.024 2.64 0.438 -145.82
0.8 0.859 -160.90 10.70 80.75 0.025 -0.43 0.446 -148.58
0.9 0.858 -164.50 9.49 76.90 0.025 -3.10 0.454 -150.76
1 0.857 -167.56 8.51 73.32 0.025 -5.46 0.463 -152.56
1.1 0.856 -170.23 7.70 69.96 0.025 -7.59 0.472 -154.11
1.2 0.856 -172.60 7.02 66.75 0.025 -9.52 0.482 -155.49
1.3 0.855 -174.74 6.43 63.69 0.025 -11.28 0.492 -156.77
1.4 0.855 -176.71 5.93 60.74 0.025 -12.87 0.502 -157.98
1.5 0.854 -178.52 5.49 57.88 0.025 -14.32 0.513 -159.15
1.6 0.854 179.77 5.10 55.12 0.025 -15.64 0.523 -160.30
1.7 0.854 178.17 4.76 52.43 0.025 -16.82 0.533 -161.43
1.8 0.854 176.64 4.45 49.81 0.025 -17.86 0.543 -162.56
1.9 0.853 175.18 4.18 47.25 0.025 -18.78 0.553 -163.69
2 0.853 173.78 3.93 44.76 0.025 -19.56 0.562 -164.83
2.1 0.853 172.43 3.70 42.32 0.025 -20.21 0.572 -165.97
2.2 0.853 171.11 3.50 39.93 0.025 -20.73 0.581 -167.12
2.3 0.852 169.83 3.31 37.59 0.025 -21.10 0.590 -168.28
2.4 0.852 168.58 3.14 35.30 0.025 -21.33 0.599 -169.44
2.5 0.852 167.35 2.98 33.06 0.025 -21.41 0.607 -170.61
2.6 0.851 166.15 2.84 30.85 0.025 -21.34 0.615 -171.78
2.7 0.851 164.96 2.70 28.69 0.025 -21.12 0.623 -172.96
2.8 0.851 163.79 2.58 26.56 0.025 -20.73 0.630 -174.14
2.9 0.850 162.64 2.47 24.48 0.025 -20.18 0.637 -175.32
3 0.850 161.49 2.36 22.42 0.025 -19.47 0.644 -176.51
3.2 0.849 159.23 2.17 18.42 0.025 -17.56 0.657 -178.89
3.4 0.848 157.00 2.00 14.55 0.026 -15.02 0.669 178.72
3.6 0.847 154.78 1.85 10.79 0.027 -11.92 0.679 176.34
3.8 0.845 152.58 1.73 7.14 0.028 -8.41 0.689 173.95
4 0.844 150.37 1.61 3.60 0.029 -4.65 0.697 171.56
4.2 0.843 148.16 1.51 0.16 0.031 -0.86 0.705 169.18
4.4 0.841 145.94 1.42 -3.19 0.034 2.77 0.712 166.79
4.6 0.839 143.71 1.34 -6.44 0.037 6.05 0.718 164.40
4.8 0.837 141.46 1.27 -9.61 0.041 8.89 0.723 162.00
5 0.835 139.18 1.21 -12.69 0.046 11.21 0.728 159.60
5.2 0.833 136.87 1.15 -15.69 0.051 13.00 0.732 157.18
5.4 0.830 134.54 1.10 -18.61 0.057 14.29 0.735 154.75
5.6 0.828 132.16 1.05 -21.45 0.064 15.09 0.738 152.31
5.8 0.825 129.75 1.01 -24.21 0.072 15.47 0.740 149.84
6 0.822 127.30 0.97 -26.89 0.080 15.46 0.742 147.35
10 CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CG2H40025
(Small Signal, VDS = 28 V, IDQ = 250 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
0.5 0.881 -151.40 18.76 93.94 0.017 12.31 0.488 -157.38
0.6 0.878 -157.62 15.77 89.14 0.018 9.22 0.495 -160.94
0.7 0.876 -162.40 13.57 85.03 0.018 6.84 0.501 -163.55
0.8 0.874 -166.25 11.89 81.37 0.018 4.92 0.505 -165.55
0.9 0.872 -169.47 10.56 78.02 0.018 3.33 0.510 -167.15
1 0.871 -172.24 9.49 74.89 0.018 1.99 0.515 -168.49
1.1 0.870 -174.67 8.60 71.93 0.019 0.84 0.519 -169.64
1.2 0.869 -176.86 7.86 69.10 0.019 -0.14 0.524 -170.66
1.3 0.867 -178.85 7.22 66.37 0.019 -0.99 0.529 -171.60
1.4 0.866 179.31 6.68 63.73 0.019 -1.72 0.534 -172.47
1.5 0.865 177.59 6.20 61.17 0.020 -2.33 0.539 -173.30
1.6 0.863 175.98 5.78 58.67 0.020 -2.84 0.544 -174.11
1.7 0.862 174.44 5.41 56.22 0.020 -3.26 0.549 -174.89
1.8 0.861 172.98 5.08 53.83 0.020 -3.58 0.554 -175.67
1.9 0.859 171.57 4.78 51.48 0.021 -3.81 0.559 -176.45
2 0.858 170.22 4.51 49.18 0.021 -3.95 0.564 -177.23
2.1 0.856 168.91 4.27 46.91 0.021 -4.00 0.569 -178.01
2.2 0.855 167.63 4.05 44.68 0.022 -3.97 0.574 -178.80
2.3 0.854 166.38 3.85 42.48 0.022 -3.86 0.579 -179.60
2.4 0.852 165.17 3.66 40.32 0.023 -3.67 0.584 179.58
2.5 0.850 163.97 3.49 38.19 0.023 -3.40 0.589 178.76
2.6 0.849 162.80 3.33 36.08 0.024 -3.06 0.593 177.93
2.7 0.847 161.64 3.19 34.01 0.024 -2.65 0.598 177.09
2.8 0.846 160.50 3.05 31.96 0.025 -2.18 0.602 176.23
2.9 0.844 159.38 2.93 29.94 0.025 -1.64 0.607 175.36
3 0.842 158.26 2.81 27.95 0.026 -1.05 0.611 174.48
3.2 0.839 156.06 2.60 24.03 0.027 0.26 0.619 172.70
3.4 0.836 153.89 2.41 20.21 0.029 1.71 0.627 170.87
3.6 0.832 151.74 2.25 16.47 0.031 3.23 0.634 169.01
3.8 0.829 149.60 2.10 12.82 0.033 4.77 0.640 167.11
4 0.825 147.46 1.97 9.25 0.036 6.24 0.646 165.18
4.2 0.821 145.33 1.86 5.75 0.039 7.61 0.651 163.22
4.4 0.817 143.19 1.76 2.33 0.043 8.82 0.656 161.23
4.6 0.814 141.03 1.66 -1.02 0.047 9.85 0.660 159.21
4.8 0.810 138.86 1.58 -4.31 0.051 10.66 0.664 157.17
5 0.806 136.67 1.51 -7.52 0.057 11.24 0.667 155.10
5.2 0.801 134.46 1.44 -10.68 0.062 11.59 0.669 153.00
5.4 0.797 132.22 1.38 -13.77 0.069 11.71 0.671 150.87
5.6 0.793 129.95 1.32 -16.80 0.076 11.60 0.673 148.72
5.8 0.788 127.64 1.27 -19.78 0.083 11.28 0.674 146.53
6 0.783 125.29 1.23 -22.69 0.092 10.74 0.675 144.31
11 CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Typical Package S-Parameters for CG2H40025
(Small Signal, VDS = 28 V, IDQ = 400 mA, angle in degrees)
Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22
0.5 0.891 -154.59 18.81 93.00 0.015 13.05 0.509 -162.83
0.6 0.888 -160.39 15.79 88.47 0.015 10.57 0.515 -165.80
0.7 0.886 -164.86 13.57 84.59 0.015 8.73 0.519 -168.00
0.8 0.885 -168.47 11.89 81.12 0.016 7.31 0.524 -169.72
0.9 0.883 -171.51 10.56 77.93 0.016 6.19 0.527 -171.12
1 0.882 -174.13 9.49 74.94 0.016 5.28 0.531 -172.30
1.1 0.881 -176.46 8.61 72.11 0.016 4.55 0.535 -173.34
1.2 0.879 -178.55 7.87 69.39 0.017 3.95 0.538 -174.27
1.3 0.878 179.53 7.23 66.77 0.017 3.47 0.542 -175.12
1.4 0.876 177.75 6.69 64.23 0.017 3.08 0.546 -175.93
1.5 0.875 176.09 6.22 61.76 0.017 2.79 0.550 -176.70
1.6 0.873 174.52 5.80 59.34 0.018 2.57 0.554 -177.44
1.7 0.872 173.02 5.43 56.97 0.018 2.43 0.558 -178.17
1.8 0.870 171.58 5.11 54.65 0.019 2.36 0.562 -178.90
1.9 0.869 170.20 4.81 52.36 0.019 2.35 0.566 -179.62
2 0.867 168.87 4.55 50.12 0.019 2.41 0.570 179.65
2.1 0.865 167.57 4.30 47.91 0.020 2.52 0.574 178.93
2.2 0.864 166.31 4.08 45.73 0.020 2.69 0.578 178.19
2.3 0.862 165.08 3.88 43.58 0.021 2.91 0.582 177.45
2.4 0.860 163.87 3.70 41.46 0.021 3.18 0.586 176.69
2.5 0.858 162.68 3.53 39.36 0.022 3.50 0.590 175.93
2.6 0.856 161.52 3.37 37.30 0.023 3.86 0.594 175.15
2.7 0.854 160.37 3.23 35.26 0.023 4.25 0.597 174.37
2.8 0.852 159.23 3.09 33.24 0.024 4.68 0.601 173.57
2.9 0.850 158.11 2.97 31.25 0.025 5.14 0.605 172.76
3 0.848 157.00 2.85 29.28 0.026 5.62 0.608 171.94
3.2 0.844 154.81 2.64 25.40 0.028 6.63 0.615 170.27
3.4 0.840 152.64 2.46 21.61 0.030 7.66 0.621 168.56
3.6 0.836 150.50 2.29 17.90 0.032 8.69 0.627 166.80
3.8 0.832 148.36 2.15 14.26 0.035 9.67 0.632 165.01
4 0.828 146.23 2.02 10.70 0.038 10.55 0.637 163.18
4.2 0.823 144.10 1.91 7.20 0.041 11.32 0.641 161.32
4.4 0.819 141.97 1.80 3.78 0.045 11.94 0.645 159.43
4.6 0.814 139.82 1.71 0.41 0.050 12.40 0.649 157.50
4.8 0.810 137.66 1.63 -2.89 0.055 12.68 0.652 155.54
5 0.805 135.48 1.55 -6.13 0.060 12.79 0.654 153.56
5.2 0.800 133.27 1.48 -9.30 0.066 12.71 0.656 151.54
5.4 0.795 131.04 1.42 -12.43 0.073 12.45 0.658 149.49
5.6 0.790 128.78 1.37 -15.49 0.080 12.01 0.659 147.40
5.8 0.785 126.49 1.32 -18.50 0.088 11.40 0.660 145.28
6 0.779 124.15 1.27 -21.45 0.096 10.62 0.660 143.13
12 CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Dimensions CG2H40025F (Package Type — 440166)
Product Dimensions CG2H40025P (Package Type — 440196)
13 CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Product Ordering Information
Order Number Description Unit of Measure Image
CG2H40025F GaN HEMT Each
CG2H40025P GaN HEMT Each
CG2H40025F-TB Test board without GaN HEMT Each
CG2H40025F-AMP Test board with GaN HEMT installed Each
14 CG2H40025 Rev 2.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
Disclaimer
Specications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/RF
Sarah Miller
Marketing & Export
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639