FMY1T148 - ROHM Electronics

EMY1 / UMY1N / FMY1A

Transistors

Emitter common (dual transistors)

EMY1 / UMY1N / FMY1A

!

!!

!Features

1) Includes a 2SA1037AK and a 2SC2412K transistor in

a EMT or UMT or SMT package.

2) PNP and NPN transistors have common emitters.

3) Mounting cost and area can be cut in half.

!

!!

!Structure

Epitaxial planar type

PNP / NPN silicon transistor

!

!!

!Equivalent circuit

EMY1 / UMY1N FMY1A

R1

Tr1Tr2

(3) (4) (5)

(2) (1)

Tr1Tr2

(3) (2) (1)

(4) (5)/(6)

!

!!

!Absolute maximum ratings (Ta = 25°C)

Parameter Symbol Limits

Tr1Tr2

V

CBO

60

50

V

CEO

V

EBO

7

I

C

150

−60

−50

−6

−150

Tj 150

Tstg −55∼+150

P

C

EMY1, UMY1N 150 (TOTAL)

Unit

V

mA

°C

mW

FMY1A 300 (TOTAL)

∗1

∗2

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Power

dissipation

∗

1 120mW per element must not be exceeded.

∗

2 200mW per element must not be exceeded.

!

!!

!External dimensions (Units : mm)

ROHM : EMT5

EMY1

ROHM : UMT5

EIAJ : SC-88A

UMY1N

Each lead has same dimensions

0to0.1

1.1

0.8

0.3to0.6

0.15

1.6

2.8

2.9

0.95

1.9

(4)

(5)

(1)

0.3

(3)

0.95

(2)

Abbreviated symbol : Y1

ROHM : SMT5

EIAJ : SC-74A

FMY1A

0.22

1.2

1.6

(1)

(2)

(3)

(5)

(4)

0.13

0.5

1.0

1.6

Each lead has same dimensions

0.9

0.15

0~0.1

0.1Min.

0.7

2.1

1.3

0.65

2.0

(4)

(1)

(6)

0.2

1.25

(2)

0.65

(3)

EMY1 / UMY1N / FMY1A

Transistors

!

!!

!Electrical characteristics (Ta = 25°C)

Tr1 (PNP)

Parameter Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

h

FE

V

CE (sat)

Cob

Min.

−60

−50

−6

−

120

−

4

−

−0.1

560

−0.5

5

VI

C

=

−50µA

I

C

=

−1mA

I

E

=

−50µA

V

CB

=

−60V

V

EB

=

−

6

V

CE

=

−6V, I

C

=

−1mA

I

C

/I

B

=

−50mA/−5mA

V

µA

−

V

PF

Typ. Max. Unit Conditions

f

T

−140 −V

CE

=

−12V, I

E

=

2mA, f

=

100MHz

V

CB

=

−12V, I

E

=

0A, f

=

1MHz

MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Output capacitance

Tr2 (NPN)

Parameter Symbol

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE (sat)

Cob

Min.

60

50

7

−

120

−

2

−

0.1

560

0.4

3.5

VI

C

=

50µA

IC

=

1mA

IE

=

50µA

VCB

=

60V

VEB

=7

V

VCE

=

6V, IC

=

1mA

IC/IB

=

50mA/5mA

V

µA

−

V

PF

Typ. Max. Unit Conditions

fT−180 −VCE

=

12V, IE

=−

2mA, f

=

100MHz

VCB

=

12V, IE

=

0A, f

=

1MHz

MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Output capacitance

!

!!

!Packaging specifications

Packaging type

Code TR T148

3000 3000

Taping

Basic ordering

unit (pieces)

UMY1N

T2R

8000

EMY1

FMY1

Type

!

!!

!Electrical characteristic curves

Tr1 (PNP)

−0.2

COLLECTOR CURRENT : Ic (mA)

−50

−20

−10

−5

−2

−1

−0.5

−0.2

−0.1 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6

V

CE

=−6V

BASE TO EMITTER VOLTAGE : V

BE

(V)

Ta=100˚C

25˚C

−40˚C

Fig.1 Grounded emitter propagation

characteristics

−0.4

−4

−8

−1.20

−2

−6

−10

−0.8 −1.6 −2.0

−3.5µA

−7.0

−10.5

−14.0

−17.5

−21.0

−24.5

−28.0

−31.5

I

B

=0

Ta=25˚C

−35.0

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.2 Grounded emitter output

characteristics ( I )

−40

−80

−5−3−4−2−1

−20

−60

−100

0

I

B

=0

Ta=25˚C

−50µA

−100

−150

−200

−250

−500

−450

−400

−350

−300

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.3 Grounded emitter output

characteristics ( II )

EMY1 / UMY1N / FMY1A

Transistors

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.4 DC current gain vs. collector

current ( I )

500

200

100

50

−0.2 −0.5 −1−2−5−10 −20 −50 −100

Ta=25˚CV

CE

=−5V

−3V

−1V

500

200

100

50

−0.2 −0.5 −1−2−5−10 −20 −50 −100

V

CE

=−6V

Ta=100˚C

−40˚C

25˚C

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C (mA)

Fig.5 DC current gain vs. collector

current ( II )

−0.1

−0.2 −0.5 −1−2−5−10 −20 −50 −100

−1

−0.5

−0.2

−0.05

Ta=25˚C

I

C

/I

B

=50

20

10

COLLECTOR CURRENT : I

C (mA)

COLLECTOR SATURATION VOLTAGE : V

CE (sat) (

V)

Fig.6 Collector-emitter saturation

voltage vs. collector current ( I )

−0.1

−0.2 −0.5 −1−2−5−10 −20 −50 −100

−1

−0.5

−0.2

−0.05

l

C

/l

B

=10

Ta=100˚C

25˚C

−40˚C

COLLECTOR SATURATION VOLTAGE : V

CE (sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.7 Collector-emitter saturation

voltage vs. collector current ( II )

50 1000.5 20

50

100

200

500

1000

12 510

Ta=25˚C

V

CE

=−

12V

EMITTER CURRENT : I

E (mA)

TRANSITION FREQUENCY : f

T (MHz)

Fig.8 Gain bandwidth product vs.

emitter current

-0.5 -20

2

5

10

-1 -2 -5 -10

20

Cib

Cob

COLLECTOR TO BASE VOLTAGE : VCB

(V)

EMITTER TO BASE VOLTAGE

: VEB

(V)

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

EMITTER INPUT CAPACITANCE

: Cib

(pF)

Fig.9 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Ta=25˚C

f

=

1MHz

IE=0A

IC=0A

Tr2 (NPN)

0

0.1

0.2

0.5

2

20

50

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

1

5

10

Ta=100˚C

VCE=6V

25˚C

−55˚C

COLLECTOR CURRENT : IC

(mA)

BASE TO EMITTER VOLTAGE : VBE

(V)

Fig.10 Grounded emitter propagation

characteristics

0

20

40

60

80

100

0.4 0.8 1.2 1.6 2.00

0.05mA

0.10mA

0.15mA

0.25mA

0.30mA

0.35mA

0.20mA

Ta=25˚C

I

B

=0A

0.40mA

0.50mA

0.45mA

COLLECTOR CURRENT : I

C

(mA)

COLLECTOR TO EMITTER VOLTAGE : V

CE

(V)

Fig.11 Grounded emitter output

characteristics ( I )

0

2

8

10

4 8 12 16

4

6

20

IB=0A

Ta=25˚C

3µA

6µA

9µA

12µA

15µA

18µA

21µA

24µA

27µA

30µA

COLLECTOR CURRENT : IC

(mA)

COLLECTOR TO EMITTER VOLTAGE : VCE

(V)

Fig.12 Grounded emitter output

characteristics ( II )

EMY1 / UMY1N / FMY1A

Transistors

0.2

20

10 0.5 1 2 5 10 20 50 100 200

50

100

200

500

V

CE

=5V

3V

1V

Ta=25˚C

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.13 DC current gain vs. collector

current ( I )

0.2 0.5 1 2 5 10 20 50 100 200

20

10

50

100

200

500

25˚C

−55˚C

Ta=100˚CV

CE

=5V

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : I

C

(mA)

Fig.14 DC current gain vs. collector

current ( II )

0.2

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

I

C

/I

B

=50

20

10

Ta=25

˚C

COLLECTOR SATURATION VOLTAGE : V

CE (sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.15 Collector-emitter saturation

voltage vs. collector current ( I )

0.2

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100 200

I

C

/I

B

=10

Ta=100˚C

25˚C

−55˚C

COLLECTOR SATURATION VOLTAGE : V

CE (sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.16 Collector-emitter saturation

voltage vs. collector current ( II )

0.2

0.01

0.02

0.05

0.1

0.2

0.5

0.5 1 2 5 10 20 50 100

I

C

/I

B

=50

Ta=100˚C

25˚C

−55˚C

COLLECTOR SATURATION VOLTAGE : V

CE (sat)

(V)

COLLECTOR CURRENT : I

C

(mA)

Fig.17 Collector-emitter saturation

voltage vs. collector current ( III )

50

−0.5 −1−2−5−10 −20 −50 −100

100

200

500

Ta=25˚C

V

CE

=6V

EMITTER CURRENT : I

E

(mA)

TRANSITION FREQUENCY : f

T

(MHz)

Fig.18 Gain bandwidth product vs.

emitter current

0.2 0.5 1 2 5 10 20 50

1

2

5

10

20

Cib

Cob

COLLECTOR TO BASE VOLTAGE : V

CB

(V)

EMITTER TO BASE VOLTAGE

: V

EB

(V)

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

EMITTER INPUT CAPACITANCE

: Cib

(pF)

Fig.19 Collector output capacitance vs.

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Ta=25˚C

f

=

1MHz

I

E

=0A

I

C

=0A

−0.2 −0.5 −1−2−5−10

10

20

50

100

200

EMITTER CURRENT : I

E

(mA)

Fig.20 Base-collector time constant vs.

emitter current

BASE COLLECTOR TIME CONSTANT : Cc r

bb'

(ps)

Ta=25

˚C

f=32MH

Z

V

CB

=6V