DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5109 is a
Silicon NPN Epitaxial Planar RF Transistor
mounted in a hermetically sealed package
designed for high frequency amplifier applications.
MARKING CODE: FULL PART NUMBER
2N5109
SILICON
NPN RF TRANSISTOR
TO-39 CASE
Central
Semiconductor Corp.
TM
R3 (23-June 2005)
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current IC400 mA
Base Current IB400 mA
Power Dissipation PD1.0 W
Power Dissipation (TC=75°C) PD2.5 W
Operating and Storage
Junction Temperature TJ,Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICEV VCE=35V, VBE=1.5V 5.0 mA
ICEV VCE=15V, VBE=1.5V, TC=150°C 5.0 mA
ICEO VCE=15V 20 μA
IEBO VEB=3.0V 100 μA
BVCBO IC=0.1mA 40 V
BVCER IC=5.0mA, RBE=10Ω40 V
BVCEO IC=5.0mA 20 V
VCE(SAT) IC=100mA, IB=10mA 0.5 V
hFE VCE=15V, IC=50mA 40 150
hFE VCE=5.0V, IC=360mA 5.0
fTVCE=15V, IC=50mA, f=200MHz 1200 MHz
Cob VCB=15V, IE=0, f=1.0MHz 3.5 pF
NF VCE=15V, IC=10mA, f=200MHz 3.0 dB
GPE VCE=15V, IC=50mA, f=200MHz 11 dB
LEAD CODE:
1) EMITTER
2) BASE
3) COLLECTOR
MARKING CODE: Full Part Number
Central
Semiconductor Corp.
TM
TO-39 CASE - MECHANICAL OUTLINE
2N5109
NPN RF TRANSISTOR
MIN MAX MIN MAX
A (DIA) 0.335 0.370 8.51 9.40
B (DIA) 0.315 0.335 8.00 8.51
C - 0.040 - 1.02
D 0.240 0.260 6.10 6.60
E 0.500 - 12.70 -
F (DIA) 0.016 0.021 0.41 0.53
G (DIA)
H
I 0.028 0.034 0.71 0.86
J 0.029 0.045 0.74 1.14
TO-39 (REV: R1)
0.200
0.100
5.08
2.54
DIMENSIONS
SYMBOL
INCHES MILLIMETERS
R3 (23-June 2005)
PROCESS CP214
Small Signal Transistor
NPN - Silicon RF Transistor Chip
PRINCIPAL DEVICE TYPES
2N5109
Process EPITAXIAL PLANAR
Die Size 16 x 16 MILS
Die Thickness 7.5 MILS
Base Bonding Pad Area 2.9 x 3.4 MILS
Emitter Bonding Pad Area 2.9 x 3.4 MILS
Top Side Metalization Al - 20,000Å
Back Side Metalization Au - 16,000Å
PROCESS DETAILS
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
BE
R1
GEOMETRY
R2 (1-August 2002)
GROSS DIE PER 4 INCH WAFER
44,460
BACKSIDE COLLECTOR
Central
Semiconductor Corp.
TM
Central
Semiconductor Corp.
TM PROCESS CP214
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com R2 (1-August 2002)
Central
Semiconductor Corp.
TM
