2N3905, 2N3906 PNP Switching Transistors Si-Epitaxial PlanarTransistors PNP Version 2004-01-20 Power dissipation - Verlustleistung 625 mW Plastic case Kunststoffgehause TO-92 (10D3) Weight approx. - Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard Pinning 1=C 2=B 3=E Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) 2N3905, 2N3906 Collector-Emitter-voltage B open - VCE0 40 V Collector-Base-voltage E open - VCE0 40 V Emitter-Base-voltage C open - VEB0 5V Power dissipation - Verlustleistung Ptot 625 mW 1) Collector current - Kollektorstrom (dc) - IC 100 mA Peak collector current - Kollektorspitzenstrom - ICM 200 mA Junction temp. - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 55...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. - - - - 250 mV 400 mV - VBEsat - VBEsat - - - - 850 mV 950 mV - ICEV - - 50 nA - IEBV - - 50 nA Collector saturation volt. - Kollektor-Sattigungsspannung - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA - VCEsat - VCEsat Base saturation voltage - Basis-Sattigungsspannung - IC = 10 mA, - IB = 1 mA - IC = 50 mA, - IB = 5 mA Collector cutoff current - Kollektorreststrom - VCE = 30 V, - VEB = 3 V Emitter cutoff current - Emitterreststrom - VCE = 30 V, - VEB = 3 V 1 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 32 General Purpose Transistors 2N3905, 2N3906 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. DC current gain - Kollektor-Basis-Stromverhaltnis - VCE = 1 V, - IC = 0.1 mA 2N3905 2N3906 hFE hFE 30 60 - - - - - VCE = 1 V, - IC = 1 mA 2N3905 2N3906 hFE hFE 40 80 - - - - - VCE = 1 V, - IC = 10 mA 2N3905 2N3906 hFE hFE 50 100 - - 150 300 - VCE = 1 V, - IC = 50 mA 2N3905 2N3906 hFE hFE 30 60 - - - - - VCE = 1 V, - IC = 100 mA 2N3905 2N3906 hFE hFE 15 30 - - - - fT fT 200 MHz 250 MHz - - - - - - 4.5 pF CEB0 - - 10 pF F F - - - - 5 dB 4 dB ton toff - - - - 70 300 Gain-Bandwidth Product - Transitfrequenz - VCE = 20 V, - IC = 10 mA, f = 100 MHz 2N3905 2N3906 Collector-Base Capacitance - Kollektor-Basis-Kapazitat - VCB = 5 V, IE = ie = 0, f = 100 kHz CCB0 Emitter-Base Capacitance - Emitter-Basis-Kapazitat - VEB = 0.5 V, IC = ic = 0, f = 100 kHz Noise figure - Rauschzahl - VCE = 5 V, - IC = 100 :A 2N3905 RG = 1 kS f = 10 Hz ...15.7 kHz 2N3906 Switching times - Schaltzeiten turn-on time turn-off time ICon = 10 mA, IBon = - IBoff = 1 mA Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 1 RthA 200 K/W 1) 2N3903, 2N3904 ) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gultig, wenn die Anschludrahte in 2 mm Abstand von Gehause auf Umgebungstemperatur gehalten werden 33