1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
32
2N3905, 2N3906 Switching Transistors
PNP Si-Epitaxial PlanarTransistors PNP
Version 2004-01-20
Power dissipation – Verlustleistung 625 mW
Plastic case TO-92
Kunststoffgehäuse (10D3)
Weight approx. – Gewicht ca. 0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard Pinning
1 = C 2 = B 3 = E Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
2N3905, 2N3906
Collector-Emitter-voltage B open - VCE0 40 V
Collector-Base-voltage E open - VCE0 40 V
Emitter-Base-voltage C open - VEB0 5 V
Power dissipation – Verlustleistung Ptot 625 mW 1)
Collector current – Kollektorstrom (dc) - IC100 mA
Peak collector current – Kollektorspitzenstrom - ICM 200 mA
Junction temp. – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 55…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector saturation volt. – Kollektor-Sättigungsspannung
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA - VCEsat
- VCEsat
–
––
–250 mV
400 mV
Base saturation voltage – Basis-Sättigungsspannung
- IC = 10 mA, - IB = 1 mA
- IC = 50 mA, - IB = 5 mA - VBEsat
- VBEsat
–
––
–850 mV
950 mV
Collector cutoff current – Kollektorreststrom
- VCE = 30 V, - VEB = 3 V - ICEV – – 50 nA
Emitter cutoff current – Emitterreststrom
- VCE = 30 V, - VEB = 3 V - IEBV – – 50 nA
1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden 33
General Purpose Transistors 2N3905, 2N3906
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
- VCE = 1 V, - IC = 0.1 mA 2N3905
2N3906 hFE
hFE
30
60 –
––
–
- VCE = 1 V, - IC = 1 mA 2N3905
2N3906 hFE
hFE
40
80 –
––
–
- VCE = 1 V, - IC = 10 mA 2N3905
2N3906 hFE
hFE
50
100 –
–150
300
- VCE = 1 V, - IC = 50 mA 2N3905
2N3906 hFE
hFE
30
60 –
––
–
- VCE = 1 V, - IC = 100 mA 2N3905
2N3906 hFE
hFE
15
30 –
––
–
Gain-Bandwidth Product – Transitfrequenz
- VCE = 20 V, - IC = 10 mA,
f = 100 MHz 2N3905
2N3906 fT
fT
200 MHz
250 MHz –
––
–
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 5 V, IE = ie = 0, f = 100 kHz CCB0 – – 4.5 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 100 kHz CEB0 – – 10 pF
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 100 :A
RG = 1 kS f = 10 Hz ...15.7 kHz 2N3905
2N3906 F
F–
––
–5 dB
4 dB
Switching times – Schaltzeiten
turn-on time ICon = 10 mA,
IBon = - IBoff = 1 mA ton ––70
turn-off time toff – – 300
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 200 K/W 1)
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren 2N3903, 2N3904
