KK4516B
MAXIMUM RATINGS*
Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) -0.5 to +20 V
VIN DC Input Voltage (Referenced to GND) -0.5 to VCC +0.5 V
VOUT DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V
IIN DC Input Current, per Pin ±10 mA
PDPower Dissipation in Still Air, Plastic DIP+
SOIC Package+ 750
500 mW
PDPower Dissipation per Output Transistor 100 mW
Tstg Storage Temperature -65 to +150 °C
TLLead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package) 260 °C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
+Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C
SOIC Package: : - 7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 3.0 18 V
VIN, VOUT DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
TAOperating Temperature, All Package Types -55 +125 °C
This device contains protection circuitry to guard against damage due to high static voltages or electric fields.
However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this
high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or
VOUT)≤VCC.
Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused
outputs must be left open.
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