CNY35X CNY35 A.C. INPUT PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form l Dimensions in mm 2.54 7.62 max. 8.3 max. EN60950 approval pending DESCRIPTION The Solid State CNY35 optically coupled isolator consists of two infrared light emitting diodes connected in inverse parallel and NPN silicon photo transistor in a standard 6 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l AC or polarity insensitive input l All electrical parameters 100% tested l Custom electrical selections available 5.1 max. 0.5 min. 3.9 3.1 0.48 0.25 15 Max ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Peak Forward Current Power Dissipation 100mA 1A 200mW OUTPUT TRANSISTOR APPLICATIONS l Computer terminals l Industrial systems controllers l Telephone sets, Telephone exchangers l Signal transmission between systems of different potentials and impedances OPTION SM 10.2 9.5 1.4 0.9 8.3 max 0.26 POWER DISSIPATION Total Power Dissipation 350mW (derate linearly 4.67mW/C above 25C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 30V 70V 7V 5V 300mW OPTION G SURFACE MOUNT 1.2 0.6 Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Emitter-base Voltage BVEBO Power Dissipation ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91040-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER MIN TYP MAX UNITS Input Forward Voltage (VF) Output Collector-emitter Breakdown (BVCEO) ( note 2 ) Collector-base Breakdown (BVCBO) Emitter-base Breakdown (BVEBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (note 2 ) 10 Coupled 1.2 V IF = 10mA 30 V IC = 1mA 70 5 7 V V V nA IC = 100A IE = 100A IE = 100A VCE = 10V % 10mAIF , 10V VCE V 10mAIF , 0.5mAIC VRMS VPK See note 1 See note 1 VIO = 500V (note 1) 50 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 0.4 5300 7500 Input-output Isolation Resistance RISO 5x1010 Note 1 Note 2 7/12/00 1.5 TEST CONDITION Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91040-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Forward Voltage 100 80 Forward current I F (mA) Collector power dissipation P C (mW) 400 300 200 100 60 40 20 0 -20 -40 -60 -80 -100 0 -30 0 25 50 75 100 -2.0 125 Forward Current vs. Ambient Temperature Normalised output current ( I C ) Forward current I F (mA) 100 80 60 40 20 2.4 2.2 2.0 1.8 2.0 Normalised to VCE = 10V , IF = 10mA , RBE = 1M , TA = 25C IF = 20mA 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 IF = 10mA IF = 5mA 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) 0 25 50 75 Ambient temperature TA ( C ) Normalised Output Current vs. Collector-emitter Voltage Normalised Output Current vs. Forward Current 10 IF = -10mA 1 IF = +10mA 10-1 Normalised to VCE = 10V , IF = +10mA , TA = 25C -2 -30 Normalised output current ( I C ) Normalised output current ( I C ) 1.0 Normalised Output Current vs. Ambient Temperature 120 100 5 1 0.5 0.1 0.05 0.01 0.005 Normalised to VCE = 10V , IF = 10mA , TA = 25C 0.001 0.0005 0.0001 10-3 0.1 0.2 0.5 1 2 5 10 20 Collector-emitter voltage VCE ( V ) 7/12/00 0 Forward voltage VF ( V ) Ambient temperature TA ( C ) 10 -1.0 50 0.1 0.2 0.5 1 2 5 10 20 50 100 Forward current IF (mA) DB91040-AAS/A2