SUMMARY
V(BR)DSS = -30V; RDS(ON) = 0.070 ;I
D= -4.4A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•Low profile SOIC package
APPLICATIONS
•Motor Drive
•LCD backlighting
DEVICE MARKING
ZXMP
3A17D
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
1
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET
DEVICE REEL TAPE
WIDTH QUANTITY
PER REEL
ZXMP3A17DN8TA 7’‘ 12mm 500 units
ZXMP3A17DN8TC 13’‘ 12mm 2500 units
ORDERING INFORMATION
SO8
Top view
PINOUT
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) RθJA 100 °C/W
Junction to Ambient (b)(e) RθJA 70 °C/W
Junction to Ambient (b)(d) RθJA 60 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGS ⫾20 V
Continuous Drain Current@VGS=10V; TA=25⬚C (b)(d)
@VGS=10V; TA=70⬚C (b)(d)
@VGS=10V; TA=25⬚C (a)(d)
ID-4.4
-3.6
-3.4
A
A
A
Pulsed Drain Current (c) IDM -16.2 A
Continuous Source Current (Body Diode)(b) IS-2.5 A
Pulsed Source Current (Body Diode)(c) ISM -16.2 A
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor PD1.25
10 W
mW/°C
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor PD1.8
14 W
mW/°C
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor PD2.1
17 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
3
100m 1 10
10m
100m
1
10
Single Pulse
Tamb=25°C
Oneactivedie
RDS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IDDrain Current (A)
-VDS Drain-Source Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Twoactivedie
Oneactivedie
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
10
20
30
40
50
60
70
80
90
100
110 Tamb=25°C
Oneactivedie
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse
Tamb=25°C
Oneactivedie
Pulse Power Dissipation
Pulse Width (s)
Maximum Power (W)
CHARACTERISTICS
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1.0 ␮AV
DS=-30V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V ID=-250␮A, VDS=V
GS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.070
0.110 ⍀
⍀VGS=-10V, ID=-3.2A
VGS=-4.5V, ID=-2.5A
Forward Transconductance (1)(3) gfs 6.4 S VDS=-15V,ID=-3.2A
DYNAMIC (3)
Input Capacitance Ciss 630 pF VDS=-15 V, VGS=0V,
f=1MHz
Output Capacitance Coss 113 pF
Reverse Transfer Capacitance Crss 78 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 1.74 ns
VDD =-15V, ID=-1A
RG=6.0Ω,V
GS=-10V
Rise Time tr2.87 ns
Turn-Off Delay Time td(off) 29.2 ns
Fall Time tf8.72 ns
Gate Charge Qg8.28 nC VDS=-15V,VGS=-5V,
ID=-3.2A
Total Gate Charge Qg15.8 nC VDS=-15V,VGS=-10V,
ID=-3.2A
Gate-Source Charge Qgs 1.84 nC
Gate-Drain Charge Qgd 2.80 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.85 -1.2 V TJ=25°C, IS=-2.5A,
VGS=0V
Reverse Recovery Time (3) trr 19.5 ns TJ=25°C, IF=-1.7A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 16.3 nC
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width ≤300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
5
0.1 1 10
0.01
0.1
1
10
0.1 1 10
0.01
0.1
1
10
1234
0.1
1
10
-50 0 50 100 150
0.6
0.8
1.0
1.2
1.4
0.1 1 10
0.1
1
10
0.2 0.4 0.6 0.8 1.0 1.2
0.01
0.1
1
10
5V
10V 4V 3.5V
-VGS
2.5V
2V
3V
Output Characteristics
T = 25°C
-VGS
-IDDrain Current (A)
-VDS Drain-Source Voltage (V)
5V 4V 3.5V
3V
2V
1.5V
10V
2.5V
Output Characteristics
T = 150°C
-IDDrain Current (A)
-VDS Drain-Source Voltage (V)
Typical Transfer Characteristics
-VDS = 10V
T = 25°C
T = 150°C
-IDDrain Current (A)
-VGS Gate-SourceVoltage(V) Normalised Curves v Temperature
RDS(on)
VGS = -10V
ID= -3.2A
VGS(th)
VGS =V
DS
ID= -250uA
NormalisedRDS(on) and VGS(th)
Tj Junction Temperature (°C)
5V
10V
3V
2V
4V
3.5V
2.5V
On-Resistance v Drain Current
T = 25°C
-VGS
RDS(on) Drain-Source On-Resistance (Ω)
-IDDrainCurrent (A)
T = 150°C
T = 25°C
Source-Drain Diode Forward Voltage
-VSD Source-DrainVoltage(V)
-ISD Reverse Drain Current (A)
TYPICAL CHARACTERISTICS
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
6
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
Charge
QGS QGD
QG
10V
VGV
VDS
GS
12V 0.2µF 50k
0.3µF
ID
IG
Current
Regulator
Same as
D.U.T
D.U.T
VDS
VGS
90%
10%
trtf
td(off)
td(on)
RG
VGS
RD
VDS
Vcc
Pulse Width < 1µS
Duty Factor 0.1%
£
-
0.1 1 10
0
200
400
600
800
1000
CRSS
COSS
CISS
VGS =0V
f=1MHz
C Capacitance (pF)
-VDS -Drain-SourceVoltage(V) 0 5 10 15 20
0
2
4
6
8
10 ID=-3.2A
VDS = -15V
Gate-SourceVoltagevGateChargeCapacitance v Drain-Source Voltage Q - Charge (nC)
-VGS Gate-SourceVoltage(V)
TYPICAL CHARACTERISTICS
ZXMP3A17DN8
PROVISIONAL ISSUE A - AUGUST 2002
7
Europe
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
uk.sales@zetex.com
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
Thispublication isissuedtoprovideoutlineinformationonlywhich (unlessagreedbytheCompany inwriting)maynotbe used,appliedorreproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex plc 2002
DIM INCHES MILLIMETRES
MIN MAX MIN MAX
A 0.053 0.069 1.35 1.75
A1 0.004 0.010 0.10 0.25
D 0.189 0.197 4.80 5.00
H 0.228 0.244 5.80 6.20
E 0.150 0.157 3.80 4.00
L 0.016 0.050 0.40 1.27
e 0.050 BSC 1.27 BSC
b 0.013 0.020 0.33 0.51
c 0.008 0.010 0.19 0.25
⍜0⬚8⬚0⬚8⬚
h 0.010 0.020 0.25 0.50
PACKAGE DIMENSIONSPACKAGE OUTLINE
CONTROLLING DIMENSIONS ARE IN INCHES
APPROX IN MILLIMETRES