V
RRM
= 20 V - 40 V
I
F(AV)
= 120 A
Features
• High Surge Capability Twin Tower Package
• Not ESD Sensitive
Parameter Symbol MBR12020CT(R) MBR12030CT(R) Unit
Repetitive peak
reverse voltage V
RRM
20 30 V
RMS reverse voltage V
RMS
14 21 V
• Types from 20 V to 40 V V
RRM
MBR12020CT thru MBR12040CTR
MBR12040CT(R)
35
25
MBR12035CT(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
y
Diode
Conditions
40
28
DC blocking voltage V
DC
20 30 V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MBR12020CT(R) MBR12030CT(R) Unit
Average forward
current (per pkg) I
F(AV)
120 120 A
Maximum forward
voltage (per leg) 0.70 0.70
11
10 10
30 30
Thermal characteristics
Thermal resistance,
junction-case,
per leg
R
ΘJC
0.80 0.80 °C/W
T
C
= 125 °C 120 120
Peak forward surge
current (per leg) I
FSM
t
p
= 8.3 ms, half sine 800 800 800 800
30
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at
rated DC blocking
voltage (per leg)
I
R
V
F
A
T
j
= 100 °C 10 10
V
T
j
= 25 °C
I
FM
= 60 A, T
j
= 25 °C
Conditions
-55 to 150 -55 to 150
MBR12060CT(R)
11
MBR12035CT(R)
0.80
T
j
= 150 °C
0.80
0.70 0.70
30
mA
-55 to 150 -55 to 150
4035
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1
MBR12020CT thru MBR12040CTR
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBR12020CT thru MBR12040CTR
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3
