"6 E SOLID STATE Optoelectronic Specifications -OL DE fR3875081 0019710 1 7 " T-41-85 im Photon Cou pled isolator H11B1,H11 B2, H11B3 snen RELIRETERS _INEHES. Tones Ga As Infrared Emitting Diode & NPN Silicon Photo-Darlington Amplifier A aie t aay: a0 1 300 The GE Solid State H11B1, H1{B2 and H11B3 are gallium arsenide, ar) Jos} | - ee aa Lo infrared emitting diodes coupled with a silicon photo-darlington 20-1 - Q 406 it O16 ozo ; amplifier in a dual in-line package. These devices are also available in 3 I ! al F . $00 7 178. O40 070 Surface-Mount packaging. SEATING aad S| 278 280 90 | 110 | . . PLANE : : > nae E absolute maximum ratings: (25C) 4] rt 5 TAA, + SF me et ey oe eel I po-. Poe INFRARED EMITTING DIODE FASS efroeview) sf and Sf ote | : 4 e| J] & f - : 983 f | 375 Power Dissipation *100 milliwatts | 4, yr & | 3% i 2 Toute | oo Forward Current (Continuous) 60 milliamps | 41 tofufe [el Notes. 1 Forward Current (Peak) 3 ampere Tr Pane 1. INSTALLED POSITION LEAD CENTERS. (Pulse width 1 usec 300 P Ps) P Tr i [ J r 2. OVERALL INSTALLED DIMENSION. 3 THESE MEASUREMENTS ARE MACE FROM THE Reverse Voltage 3 volts io wd SEATING PLANE. *Derate 1,33mW/C above 25C ambient. am ey 4. FOUR PLACES TOTAL DEVICE PHOTO-DARLINGTON Storage Temperature -55 to 150C Power Dissipation **150 milliwatts Operating Temperature -55 to 100C Vero 25 volts Lead Soldering Time (at 260C) 10 seconds Vepo 30 volts Surge Isolation Voltage (Input to Output). Vero 7 volts 5656V peas 4000V ams) Collector Current (Continuous) 100 milliamps Steady-State Isolation Voltage (Input to Output). **Derate 2.0mW/C above 25C ambient. 5300V pests 3750V ams) individual electrical characteristics (25C) INFRARED EMITTING DIODE | TYP. | MAX. UNITS PHOTO-DARLINGTON MIN.| TYP./MAX.| UNITS Forward Voltage Breakdown Voltage Visryceo | 25 | | volts H11B1, B2 (Ip = 10mA) 11 | 1.5 | volts (Ic = LOmA, Ip = 0) H11B3 (Ip = 50mA) 1.1 1.5 | volts Breakdown Voltage Vsryczo | 30 | - | volts (Ic = 100uA, Ip = 0) Reverse Current : Breakdown Voltage V, 71 4} [volts = - 10 | microamps (BR)EBO (Vp =3V) toroamp: (Ig = 100uA, Ip = 0) Collector Dark Current Icgo | 5 | 100 }nanoamps (Vcr = 10V, Ip = 0) Capacitance Capacitance - | 6 | |picofarads (V=0,f = 1MHz) 50 | picofarads (Vcg = 10V,f = 1MHz) coupled electrical characteristics (25C) MIN. | TYP. | MAX. UNITS DC Current Transfer Ratio (Ip = ImA, Vox = 5V) H11B1 500 - - |% H11B2 200 - - % Hi1B3 100 - - |% Saturation Voltage Collector to Emitter (Ip = ImA, Ic = 1mA) - 0.7 1.9 | volts Isolation Resistance (Input to Output Voltage = 500Vpc) 100 - | gigaohms Input to Output Capacitance (Input to Output Voltage = O,f = 1MHz) _ - 2 picofarads Switching Speeds: (Vc = 10V, Ic = 10mA, Ry, = 1002) On-Time - 125 {microseconds Off-Time - 100 | microseconds % Covered under U.L component recognitionprogram, reference file E51868 VDE Approved to 0883/6.80 0110b Certificate # 35025 234 G E SOLID STATE. H11B1, H11B2, H11B3 TYPICAL CHARACTERISTICS OUTPUT CURRENT VS INPUT CURRENT Vp-VOLT = Vp- FORWARD VOLTAGE - VOLTS INPUT CHARACTERISTICS RESISTANCE NORMALIZEO Voge 1OV Rys00n mA Tgp OUTPUT CI al ' NORMALIZED SWITCHING SPEED fgt ty+tgt ty SWITCHING SPEED VS OUTPUT CURRENT 3875081 OOL4711 4 i ol dE i - Jptoeiectronic speciicauons T'S NORMALIZED TO: Vee 2 5 Teetma The +26C Zegp ~NORMALIZED QUTPUT CURRENT =8B ~18 28 65 190 Ta~ AMBIENT TEMPERATURE ~ C OUTPUT CURRENT VS TEMPERATURE Ar 17} UT wonmatizeo To! lee - NORMALIZED OUTPUT CURRENT 2 a4 68 4 68 2 i 10 Vog - COLLESTOR TO EMITTER VOLTAGE = VOLTS OUTPUT CHARACTERISTICS URRENT 6 3. a NORMALIZED TO: Teo NORMALIZED DARK Cl Tat 428C +85 +100 J, -AMBIENT TEMPERATURE - C NORMALIZED DARK CURRENT VS TEMPERATURE 235