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Pacific Silicon Sensor Series 11 Data Sheet
Part Description AD800-11-TO52-S1
Order # 06-112
PIN 1 Ø 2.54
3 PL
CATHODE
PIN 3
ANODE
12.7
3 PL
PIN CIRCLE
±1 PIN 4
CASE
ACTIVE AREA: 0.50 mm
(800 µm DIA) 2
BACKSIDE VIEW
Ø5.40 64°
VIEWING
ANGLE
Ø 4.70
5.2
FRONTSIDE VIEW
Ø0.46
2.70
Ø3.90
FEATURES DESCRIPTION APPLICATIONS
800 µm active area
Blue enhanced
High QE at blue range
Fast rise time
0.50 mm
2
High Speed, High Gain, Blue Enhanced
Avalanche Photodiode with P on N construction.
Hermetically packaged in a case isolated TO-52-S1 with a
UV transmitting clear glass window cap.
Analytical equipment
Scintillation
Medical equipment
High speed photometry
ABSOLUTE MAXIMUM RATING SPECTRAL RESPONSE M=100
SYMBOL PARAMETER MIN MAX UNITS
TSTG Storage Temp -55 +125 C
TOP Operating Temp -40 +85 C
TSOLDERING Soldering Temp
10 seconds +260 C
Electrical Power
Dissipation @ 22C - 100 mW
Optical Peak Value,
once for 1 second - 200 mW
IPH (DC) Continuous Optical
Operation
1 mA for signal 50 µs
“on” / 1 ms “off”
- 250 µA
ELECTRO-OPTICAL CHARACTERISTICS @ 23 C
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
ID Dark Current M = 100 --- 1.0 5.0 nA
C Capacitance M = 100 --- 2.5 --- pF
VBR Breakdown Voltage ID = 2 µA 100 200 --- V
Temperature Coefficient of VBR --- 0.88 --- V/K
Responsivity M = 100; = 400 nm --- 25 --- A/W
M = 100; = 500 nm --- 35 ---
M = 100; = 600 nm --- 40 ---
3dB Bandwidth -3dB --- 175 --- MHz
t
r
Rise Time = 410 nm; RL = 50 --- 1 --- ns
Optimum Gain 50 --- 80
Noise Current M = 100 --- 0.25 --- pA/Hz1/2
Max Gain 200 500
---
NEP Noise Equivalent Power M = 100; = 410 nm --- 1.0 X 10-14 --- W/Hz1/2
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
200
75% of V
85% of V
92% of V
300 400 500 600 700 800 900 1000 1100
WAVELENGTH (nm)
RESPONSIVITY (A/W)
0
5
10
15
20
25
30
35
40
45
50 BR
BR
BR
H
o
R
S
C
O
M
P
L
I
A
N
T
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TYPICAL GAIN vs BIAS VOLTAGE TYPICAL DARK CURRENT v s BIAS VOLTA GE
20 40 60 80 100 120 1400
0.01
0.1
1
10
100
1000
BIAS VOLTAGE (Vr)
GAIN
20 40 60 80 100 120 1400
0.01
0.1
1
10
100
1000
BIAS VOLTAGE (Vr)
DARK CUR RENT (Id)
DEVICE SCHEMATIC SUGGESTED CIRCUIT SCHEMATIC
PIN 1
PIN 4
PIN 3
BIAS SUPPLY VOLTAGE
CURRENT LIMITING RESISTOR
MIN. 0.1 µF CAPACITOR
CLOSEST TO APD
APD
DIODE, PROTECTIVE CIRCUIT
READ-OUT CIRCUIT OR
50 Ohm LOAD RESISTANCE
APPLICATION NOTES
Current should be limited by a protecting resistor or current limiting IC inside the power supply.
Use of low noise read-out IC.
For high gain applications (M>50) bias voltage should be temperature compensated.
For low light level applications, blocking of ambient light should be used.
HANDLING PRECAUTIONS:
Soldering temperature - 260C for 10 seconds max. The device must be protected against solder flux vapor.
Minimum pin length - 2 mm
ESD protection - Standard precautionary measures are sufficient.
Storage - Store devices in conductive foam.
Avoid skin contact with window.
Clean window with Ethyl alcohol if necessary.
Do not scratch or abrade window.
USA:
Pacific Silicon Sensor, Inc.
5700 Corsa Avenue, #105
Westlake Village, CA 91362 USA
Phone (818) 706-3400
Fax (818) 889-7053
Email: sales@pacific-sensor.com
www.pacific-sensor.com
Proud Members of the Silicon Sensor International AG Group of companies
International sales:
Silicon Sensor International AG
Peter-Behrens-Str. 15
D-12459 Berlin, Germany
Phone +49 (0)30-63 99 23 10
Fax +49 (0)30-63 99 23 33
Email: sales@silicon-sensor.de
www.silicon-sensor.de
