GENERAL DESCRIPTION The JTDASO is a common basis transistor providing 50 watts of pulsed RF output power across the 960-1215 MHz Band. This hermetically sealed transistor is specifically designed for JTIDS and other similar high power, long pulse width, high duty cycle applications. It utilizes gold metallization and emitter ballasting to provide ruggedness and high reliability along with internal matching for ease of design. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25% Case Temperature 220 W Maximum Voltage and Current BVces Collector to Emitter Voltage 55 V BVebo Emitter to Base Voltage 35 V Ic Collector Current 7.0A Maximum Temperatures Storage Temperature -65 to +200 c Operating JunctionTemperature +200 C 490 Race Street, San Jose, CA 95126 al Phone (408) 294-4200, TWX (910) 338-2172 [LREVA AUG 1987 Ewenny Rd., Bridgend, Mid Glamorgan, CF31 3LQ, United Kingdom, Phone (0656) 68021 - AVIONICS E (2 pis) L1 M i. Ey F f Li:c L2:b6 L3:6 DIM | Millimeter | TOL | Inches Printed in USA . 74 4 0182998 ACRIAN INC 47 pe Bouaeqds on01093 4 ff io [ELECTRICAL CHARACTERISTICS" T-33-15 SYMBOL] CHARACTERISTICS TEST CONDITIONS MIN. TYP. MAX. UNITS Pout 2 Power Output 50 Watts 7) 10 Pin Power Input f=960-1215 MHz Watts Pg Power Gain Voce 25 mA 7.0 dB Ne Collector Efficiency 40 % VSWR? 1 Load Mismatch Tolerance f= 960 MHz 10:1 BVebo Breakdown Voltage Ic= OA, le= 25mA 35 Volts (Emitter to Base) BVces | Breakdown Voltage Vbe= 0A, c= 25mA 55 Volts (Collector to Emitter) h FE DC-Current Gain lex 750 mA, Vce= 5V 20 100 Gic Thermal Resistance 0.8 CW Note 1: Tc = +25C unless otherwise specified Note 2: Pulse Width = 10 psec; Duty Cycle= 20%; Vec= 36 Volts SPECIFICATIONS MAY BE SUBJECT TO CHANGE WITHOUT NOTICE