2SK2958(L), 2SK2958(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1058-0400 (Previous: ADE-208-568B) Rev.4.00 Sep 07, 2005 Features * Low on-resistance RDS(on) = 5.5 m typ. * 4 V gate drive devices. * High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) 4 D 4 1. Gate 2. Drain 3. Source 4. Drain G 1 1 2 3 Rev.4.00 Sep 07, 2005 page 1 of 7 2 3 S 2SK2958(L), 2SK2958(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID Ratings 30 20 75 300 75 100 150 -55 to +150 ID(pulse)Note1 IDR Pch Note2 Tch Tstg Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Rev.4.00 Sep 07, 2005 page 2 of 7 Symbol V(BR)DSS V(BR)GSS Min 30 20 Typ -- -- Max -- -- Unit V V Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 IDSS IGSS VGS(off) RDS(on) -- -- 1.0 -- -- 35 -- -- -- -- -- -- -- -- -- -- -- -- 5.5 9.0 60 4100 2700 800 45 430 460 440 1.0 90 10 10 2.0 7.0 14.0 -- -- -- -- -- -- -- -- -- -- A A V m m S pF pF pF ns ns ns ns V ns VDS = 30 V, VGS = 0 VGS = 1 6V, VDS = 0 ID = 1 mA, VDS = 10V ID = 40 A, VGS = 10V Note3 ID = 40 A, VGS = 4V Note3 ID = 40 A, VDS = 10V Note3 RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr VDS = 10 V, VGS = 0, f = 1 MHz VGS = 10 V, ID = 40 A, RL = 0.25 IF = 75A, VGS = 0 IF = 75A, VGS = 0 diF/ dt = 50 A/s 2SK2958(L), 2SK2958(S) Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating 1000 Drain Current ID (A) 120 80 40 100 PW 30 DC 10 10 = 1 10 m ms ( 0 s s s Op 1s e ho (T rati t) c = on 25 C ) Operation in this area is limited by RDS(on) 3 1 0.3 0 100 Drain Current ID (A) 10 300 80 50 100 150 0.1 Ta = 25C 0.1 0.3 1 200 3 10 30 100 Case Temperature TC (C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 100 VGS = 10 V Pulse Test 6V 5V 4V Drain Current ID (A) Channel Dissipation Pch (W) 160 3.5 V 60 40 3V 20 VDS = 10 V Pulse Test 80 60 25C 40 75C 20 Tc = -25C 2.5 V 2 4 6 8 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.4 0.3 ID = 50 A 0.2 20 A 0.1 10 A 0 0 10 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.4.00 Sep 07, 2005 page 3 of 7 Static Drain to Source on State Resistance RDS (on) (m) Drain to Source Saturation Voltage VDS (on) (V) 0 50 Pulse Test 20 VGS = 4 V 10 10 V 5 2 1 1 3 10 30 100 300 Drain Current ID (A) 1000 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 20 A ID = 50 A 12 10 A VGS = 4 V 8 50 A 10, 20 A 4 10 V 0 -40 0 40 80 120 160 500 100 50 5 1 0.5 0.1 0.3 1 3 10 30 100 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Capacitance C (pF) 30000 200 100 50 20 0.3 1 3 10 30 10000 Ciss 3000 Coss 1000 Crss 300 di / dt = 50 A / s VGS = 0, Ta = 25C VGS = 0 f = 1 MHz 100 0 100 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics VGS 16 VDD = 5 V 10 V 25 V 30 VDS 12 8 VDD = 25 V 10 V 5V 10 80 160 240 4 320 Gate Charge Qg (nc) Rev.4.00 Sep 07, 2005 page 4 of 7 0 400 5000 2000 Switching Time t (ns) 20 ID = 75 A 40 0 75C 2 500 20 25C 10 100000 50 Tc = -25C 20 1000 10 0.1 VDS = 10 V Pulse Test 200 Case Temperature TC (C) Gate to Source Voltage VGS (V) Drain to Source Voltage VDS (V) Reverse Recovery Time trr (ns) Static Drain to Source on State Resistance RDS (on) (m) 2SK2958(L), 2SK2958(S) VGS = 10 V, VDD = 10 V PW = 5 s, duty < 1 % 1000 td(off) 500 tf 200 tr 100 td(on) 50 20 10 5 0.1 0.2 0.5 1 2 5 10 20 Drain Current ID (A) 50 100 2SK2958(L), 2SK2958(S) (A) 100 Reverse Drain Current IDR Reverse Drain Current vs. Source to Drain Voltage 80 10 V 5V 60 VGS = 0, -5 V 40 20 Pulse Test 0 0.4 0.8 1.2 1.6 Source to Drain Voltage 2.0 VSD (V) Normalized Transient Thermal Impedance s (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 ch - c(t) = s (t) * ch - c ch - c = 1.25C/W, Tc = 25C 0.1 0.05 0.03 PDM 0.02 1 lse 0.0 t pu o h 1s 0.01 10 D= PW T 100 1m 10 m Pulse Width 100 m 1 10 PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10 V PW T 50 VDD = 10 V 10% 10% 90% td(on) Rev.4.00 Sep 07, 2005 page 5 of 7 10% tr 90% td(off) tf 2SK2958(L), 2SK2958(S) Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] PRSS0004AE-A LDPAK(L) / LDPAK(L)V 1.40g 8.6 0.3 1.3 0.15 1.3 0.2 1.37 0.2 0.76 0.1 2.54 0.5 2.54 0.5 RENESAS Code Package Name PRSS0004AE-B LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 0.1 MASS[Typ.] Unit: mm 1.30g (1.5) 10.0 Rev.4.00 Sep 07, 2005 page 6 of 7 2.54 0.5 0.4 0.1 0.3 3.0 +- 0.5 2.54 0.5 0.2 0.86 +- 0.1 7.8 7.0 2.49 0.2 0.2 0.1 +- 0.1 1.37 0.2 1.3 0.2 7.8 6.6 1.3 0.15 + 0.3 - 0.5 8.6 0.3 (1.5) (1.4) 4.44 0.2 10.2 0.3 1.7 SC-83 2.49 0.2 11.0 0.5 11.3 0.5 0.3 10.0 +- 0.5 (1.4) 4.44 0.2 10.2 0.3 0.2 0.86 +- 0.1 JEITA Package Code Unit: mm 2.2 2SK2958(L), 2SK2958(S) Ordering Information Part Name 2SK2958L-E 2SK2958STL-E Quantity 500 pcs 1000 pcs Shipping Container Box (Sack) Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.4.00 Sep 07, 2005 page 7 of 7 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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