Rev.4.00 Sep 07, 2005 page 1 of 7
2SK2958(L), 2SK2958(S)
Silicon N Channel MOS FET
High Speed Power Switching REJ03G1058-0400
(Previous: ADE-208-568B)
Rev.4.00
Sep 07, 2005
Features
Low on-resistance
RDS(on) = 5.5 m typ.
4 V gate drive devices .
High speed switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK(L))
1. Gate
2. Drain
3. Source
4. Drain
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1))
D
G
S
123
4
123
4
2SK2958(L), 2SK2958(S)
Rev.4.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID 75 A
Drain peak current ID(pulse)Note1 300 A
Body-drain diode reverse drain current IDR 75 A
Channel dissipation Pch Note2 100 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V(BR)DSS 30 V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — V IG = ±100 µA, VDS = 0
Zero gate voltage drain current IDSS10 µA VDS = 30 V, VGS = 0
Gate to source leak current IGSS±10 µA VGS = ±1 6V, VDS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 1 mA, VDS = 10V
RDS(on) 5.5 7.0 m I
D = 40 A, VGS = 10V Note3
Static drain to source on state
resistance RDS(on) 9.0 14.0 m I
D = 40 A, VGS = 4V Note3
Forward transfer admittance |yfs| 35 60 S ID = 40 A, VDS = 10V Note3
Input capacitance Ciss 4100 pF
Output capacitance Coss 2700 pF
Reverse transfer capacitance Crss 800 pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time td(on) — 45 — ns
Rise time tr430 ns
Turn-off delay time td(off)460 ns
Fall time tf440 ns
VGS = 10 V, ID = 40 A,
RL = 0.25
Body–drain diode forward voltage VDF — 1.0 — V IF = 75A, VGS = 0
Body–drain diode reverse
recovery time trr — 90 — ns
IF = 75A, VGS = 0
diF/ dt = 50 A/µs
Note: 3. Pulse test
2SK2958(L), 2SK2958(S)
Rev.4.00 Sep 07, 2005 page 3 of 7
Main Characteristics
Power vs. Temperature Derating
Channel Dissipation Pch (W)
Case Temperature T
C
(°C)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Drain Current I
D
(A)
Drain to Source Voltage V
DS
(V)
Typical Transfer Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS (on)
(V)
Drain Current I
D
(A)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain to Source on State Resistance
R
DS (on)
(m)
160
120
80
050 100 150 200 0.1 0.3 1 310 30 100
100
80
60
40
20
0246810
1000
300
100
30
10
1
0.3
0.1
3
Ta = 25°C
10 µs
100 µs
1 ms
DC Operation
(Tc = 25°C)
Operation in
this area is
limited by RDS(on)
PW = 10 ms (1 shot)
5 V
4 V 3.5 V
3 V
40
VGS = 10 V
6 V
2.5 V
100
80
60
40
20
012345
Tc = –25°C
25°C
75°C
VDS = 10 V
Pulse Test
Pulse Test
048
12 16 20
0.5
0.4
0.3
0.2
0.1
Pulse Test
ID = 50 A
20 A
10 A
1 30 1003
50
2
5
1
10 100
0
300
20
10 VGS = 4 V
10 V
Pulse Test
2SK2958(L), 2SK2958(S)
Rev.4.00 Sep 07, 2005 page 4 of 7
Case Temperature T
C
(°C)
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(m)
Forward Transfer Admittance
vs. Drain Current
Drain Current I
D
(A)
Forward Transfer Admittance yfs (S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Capacitance C (pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Switching Time t (ns)
Drain Current I
D
(A)
20
16
12
8
4
–40 0 40 80 120 160
0
V
GS
= 4 V
10 V
Pulse Test
10, 20 A
I
D
= 50 A 20 A 10 A
50 A
0.1 0.3 1 3 10 30 100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25°C
75°C
25°C
V
DS
= 10 V
Pulse Test
0.1 0.3 1 3 10 30 100 01020304050
3000
100000
10000
30000
50
40
30
20
10
0
20
16
12
8
4
80 160 240 320 400
0
1000
100
200
20
10
0.1 0.2 210 100
1000
500
100
200
20
50
10
di / dt = 50 A / µs
V
GS
= 0, Ta = 25°C
1000
300
20
1
100
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 75 A
V
GS
V
DS
V
DD
= 5 V
10 V
25 V
V
DD
= 25 V
10 V
5 V
0.5 5
5
2000
5000
500
50
50
V
GS
= 10 V, V
DD
= 10 V
PW = 5 µs, duty < 1 %
tr
td(on)
td(off)
tf
2SK2958(L), 2SK2958(S)
Rev.4.00 Sep 07, 2005 page 5 of 7
Pulse Width PW (S)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
Source to Drain Voltage VSD (V)
Reverse Drain Current IDR (A)
Reverse Drain Current vs.
Source to Drain Voltage
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
DD
= 10 V
tr
td(on)
Vin
90% 90%
10%
10%
Vout
td(off)
Vout
Monitor
50
90%
10%
tf
Switching Time Test Circuit Waveform
100
80
60
40
20
00.4 0.8 1.2 1.6 2.0
Pulse Test
V
GS
= 0, –5 V
5 V
10 V
3
1
0.3
0.1
0.03
0.01
10 µ100 µ1 m 10 m 100 m 1 10
DM
P
PW
T
D = PW
T
ch – c(t) = s (t) ch – c
ch – c = 1.25°C/W, Tc = 25°C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
2SK2958(L), 2SK2958(S)
Rev.4.00 Sep 07, 2005 page 6 of 7
Package Dimensions
10.2 ± 0.3
0.86
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
+ 0.2
– 0.1
1.3 ± 0.2
4.44 ± 0.2
1.3 ± 0.15
2.49 ± 0.2
0.4 ± 0.1
11.0 ± 0.5
8.6 ± 0.3
10.0
11.3 ± 0.5
+ 0.3
– 0.5
(1.4)
1.37 ± 0.2
Package Name
PRSS0004AE-A LDPAK(L) / LDPAK(L)V
MASS[Typ.]
1.40g
RENESAS CodeJEITA Package Code
Unit: mm
10.2 ± 0.3
1.37 ± 0.2
(1.5)
(1.4)
8.6 ± 0.3
10.0
+ 0.3
– 0.5
4.44 ± 0.2
1.3 ± 0.15
0.1
+ 0.2
– 0.1
0.4 ± 0.1
2.49 ± 0.2
0.86
+ 0.2
– 0.1
2.54 ± 0.5
2.54 ± 0.5
1.3 ± 0.2
3.0
+ 0.3
– 0.5
(1.5)
7.8
6.6
2.2
1.7
7.8
7.0
SC-83 1.30g
MASS[Typ.]
LDPAK(S)-(1) / LDPAK(S)-(1)V
PRSS0004AE-B
RENESAS CodeJEITA Package Code Package Name
Unit: mm
2SK2958(L), 2SK2958(S)
Rev.4.00 Sep 07, 2005 page 7 of 7
Ordering Information
Part Name Quantity Shipping Container
2SK2958L-E 500 pcs Box (Sack)
2SK2958STL-E 1000 pcs Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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