ESDM3031 ESD Protection Diode Micro-Packaged Diodes for ESD Protection The ESDM3031 is designed to protect voltage sensitive components that require low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. www.onsemi.com Features Low Clamping Voltage Small Body Outline Dimensions: 0.62 mm x 0.32 mm Low Body Height: 0.3 mm Stand-off Voltage: 3.3 V IEC61000-4-2 Level 4 ESD Protection These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM PIN 1 X3DFN2 CASE 152AF Typical Applications 5 M * mSD Card Protection * Audio Line * GPIO M = Specific Device Code = Date Code ORDERING INFORMATION MAXIMUM RATINGS Rating IEC 61000-4-2 (ESD) 5 * * * * * * 2 1 Symbol Contact Air Value Unit 30 30 kV Total Power Dissipation on FR-5 Board (Note 1) @ TA = 25C Thermal Resistance, Junction-to-Ambient PD 250 mW RqJA 400 C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 C TL 260 C Lead Solder Temperature - Maximum (10 Second Duration) Device Package Shipping ESDM3031MXT5G X3DFN2 (Pb-Free) 10000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. (c) Semiconductor Components Industries, LLC, 2017 October, 2017 - Rev. 2 1 Publication Order Number: ESDM3031/D ESDM3031 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) IPP Parameter Symbol IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR IT I IT VC VBR VRWM IR IR VRWM VBR VC IT Working Peak Reverse Voltage V Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT IPP Test Current Bi-Directional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise specified) Parameter Symbol Reverse Working Voltage Conditions Min Typ VRWM Breakdown Voltage (Note 2) VBR IT = 1 mA 4.4 Max Unit 3.3 V 6.2 V Reverse Leakage Current IR VRWM = 3.3 V 0.1 mA Clamping Voltage (Note 3) VC IPP = 5 A 6.3 V Clamping Voltage (Note 3) VC IPP = 10 A 8.0 V Peak Pulse Current (Note 3) IPP tP = 8/20 ms Clamping Voltage TLP (Note 4) VC IPP = 16 A Junction Capacitance CJ VR = 0 V, f = 1 MHz Dynamic Resistance RDYN 11 A 7.2 IEC 61000-4-2 Level 4 equivalent (8 kV Contact, 15 kV Air) V 20 TLP Pulse pF 0.13 W 40 5 35 0 30 -5 25 -10 VOLTAGE (V) VOLTAGE (V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1. 3. Non-repetitive current pulse at TA = 25C, per IEC61000-4-5 waveform. 4. ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 4 ns, averaging window; t1 = 30 ns to t2 = 60 ns. 20 15 10 -15 -20 -25 5 -30 0 -35 -5 -20 0 20 40 60 80 100 120 -40 -20 140 0 20 40 60 80 100 120 TIME (ns) TIME (ns) Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000-4-2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000-4-2 www.onsemi.com 2 140 ESDM3031 22 -20 20 -18 18 -16 16 -14 ITLP (A) ITLP (A) 14 12 10 8 -12 -10 -8 6 -6 4 -4 2 -2 0 0 4 2 6 8 10 12 16 14 18 0 20 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 VCTLP (V) VCTLP (V) Figure 3. Positive TLP I-V Curve Figure 4. Negative TLP I-V Curve 25 1.E-03 1.E-04 20 1.E-05 1.E-06 IR (A) C (pF) 15 1.E-07 1.E-08 1.E-09 10 5 1.E-10 0 1.E-11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 -5 -4 -3 -2 9 9 8 8 7 7 VC @ IPK (V) VC @ IPK (V) 10 6 5 4 2 1 1 8 4 5 4 2 6 3 5 3 4 2 6 3 2 1 Figure 6. Line Capacitance, f = 1 MHz 10 0 0 VBIAS (V) VR (V) Figure 5. IV Characteristics 0 -1 10 12 14 0 16 0 2 4 6 8 10 IPK (A) IPK (A) Figure 7. Positive Clamping Voltage vs. Peak Pulse Current (tp = 8/20 ms) Figure 8. Negative Clamping Voltage vs. Peak Pulse Current (tp = 8/20 ms) www.onsemi.com 3 12 ESDM3031 60.0 1 50.0 -1 0 -2 -3 S21 (db) C (pF) 40.0 30.0 20.0 -4 -5 -6 -7 -8 10.0 -9 0.0 0.E+00 5.E+08 1.E+09 2.E+09 2.E+09 -10 1.0E+07 1.0E+08 FREQUENCY (Hz) FREQUENCY (Hz) Figure 9. Capacitance Over Frequency Figure 10. RF Insertion Loss www.onsemi.com 4 1.0E+09 ESDM3031 IEC61000-4-2 Waveform IEC 61000-4-2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 11. IEC61000-4-2 Spec Device Under ESD Gun Oscilloscope Test 50 W 50 W Cable Figure 12. Diagram of ESD Test Setup ESD Voltage Clamping at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000-4-2 waveform. Since the IEC61000-4-2 was written as a pass/fail spec for larger systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 13. 8 x 20 ms Pulse Waveform www.onsemi.com 5 80 ESDM3031 Transmission Line Pulse (TLP) Measurement L Transmission Line Pulse (TLP) provides current versus voltage (I-V) curves in which each data point is obtained from a 100 ns long rectangular pulse from a charged transmission line. A simplified schematic of a typical TLP system is shown in Figure 14. TLP I-V curves of ESD protection devices accurately demonstrate the product's ESD capability because the 10s of amps current levels and under 100 ns time scale match those of an ESD event. This is illustrated in Figure 15 where an 8 kV IEC 61000-4-2 current waveform is compared with TLP current pulses at 8 A and 16 A. A TLP I-V curve shows the voltage at which the device turns on as well as how well the device clamps voltage over a range of current levels. 50 W Coax Cable S Attenuator / 50 W Coax Cable 10 MW IM VM DUT VC Oscilloscope Figure 14. Simplified Schematic of a Typical TLP System Figure 15. Comparison Between 8 kV IEC 61000-4-2 and 8 A and 16 A TLP Waveforms www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS X3DFN2, 0.62x0.32, 0.355P, (0201) CASE 152AF ISSUE A DATE 17 FEB 2015 SCALE 8:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. A B D PIN 1 INDICATOR (OPTIONAL) DIM A A1 b D E e L2 E TOP VIEW 0.05 C A 2X 0.05 C A1 SIDE VIEW C MILLIMETERS MIN MAX 0.25 0.33 --- 0.05 0.22 0.28 0.58 0.66 0.28 0.36 0.355 BSC 0.17 0.23 GENERIC MARKING DIAGRAM* SEATING PLANE PIN 1 XM e 1 2X 0.05 M 2 2X b X = Specific Device Code M = Date Code 0.05 L2 M C A B RECOMMENDED MOUNTING FOOTPRINT* C A B BOTTOM VIEW 0.74 2X 0.30 1 2X 0.31 DIMENSIONS: MILLIMETERS See Application Note AND8398/D for more mounting details *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON56472E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. 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