NES1823M-180-A - Renesas Electronics

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DESCRIPTION

The NES1823M-180 is a 180 W push-pull type GaAs FET designed for high power transmitter applications for IMT-

2000 base station systems. It operates at 12 V and is capable of delivering 180 W of output power (CW) with high

linear gain, high efficiency and low distortion. Its primary band is 1.8 to 2.3 GHz. The device employs 0.7

Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide passivation for superior performance, thermal

characteristics, and reliability.

FEATURES

• Push-pull type GaAs FET

• VDS = 12.0 V operation

• High output power: Pout = 180 W TYP.

• High linear gain: GL = 12.5 dB TYP.

• High power added efficiency:

add = 48% TYP. @ VDS = 12.0 V, IDset = 2.0 A (total), f = 2.17 GHz

• Hollow plastic package

ORDERING INFORMATION

Part Number Order Number Package Supplying Form

NES1823M-180 NES1823M-180-A T-92M (Pb-Free) ESD protective tray

Remark To order evaluation samples, contact your nearby sales office.

DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

GaAs FET

NES1823M-180

180 W L, S-BAND PUSH-PULL POWER GaAs FET

Document No. PG10357EJ02V0DS (2nd edition)

Date Published October 2004 CP(K)

Printed in Japan 

NEC Compound Semiconductor Devices, Ltd. 2003, 2004

The mark  shows major revised points.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Operation in excess of any one of these parameters may result in permanent damage.

Parameter Symbol Ratings Unit

Drain to Source Voltage VDS 19 V

Gate to Source Voltage VGSO −7 V

Gate to Drain Voltage VGDO −26 V

Gate Current IG 900 mA

Total Power Dissipation Ptot 250 W

Channel Temperature Tch 175 °C

Storage Temperature Tstg −65 to +150 °C

Gain Compression (CW) Gcomp 3.0 dB

RECOMMENDED OPERATING LIMITS

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Drain to Source Voltage VDS − 12.0 12.0 V

Channel Temperature Tch − − +150 °C

Set Drain Current IDset VDS = 12.0 V, RF OFF − 3.0 6.0 A

Gate Resistance RgNote − 0.6 1.2 Ω

Note R

g is the series resistance between the gate supply and the FET gate.

g =

ELECTRICAL CHARACTERISTICS (TA = +25°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Pinch-off Voltage Vp VDS = 2.5 V, ID = 650 mA −0.8 −0.5 −0.2 V

Thermal Resistance Rth Channel to Case − 0.30 0.40 °C/W

Output Power Pout f = 2.17 GHz CW, VDS = 12 V, 51.5 52.5 − dBm

Drain Current ID Pin = 43.0 dBm, Rg = 0.6 Ω, − 32 − A

Power Added Efficiency

add IDset = 2.0 A Total (RF OFF) Note − 48 − %

Linear Gain GL (GL : Pin = 31 dBm) 11.5 12.5 − dB

Note IDset = 1.0 A each drain

Rg1 × Rg2

Rg1 + Rg2

Data Sheet PG10357EJ02V0DS

NES1823M-180

TYPICAL CHARACTERISTICS (TA = +25°C)

2.2 2.42.32.12.01.9

Gain GL (dB)

Frequency f (GHz)

GAIN vs. FREQUNCY RESPONSE

VDS= 12 V, IDset = 2.0 A

Rg = 0.6 Ω, CW, Pin = 31 dBm

−20

−50

−30

−25

−60

−55

40 5045353025

3rd/5th Order Inter Modulation Distortion IM3/IM5 (dBc)

Average Output Power Pout (dBm)

−35

−40

−45

VDS= 12 V, IDset = 2 A

Rg = 0.6 Ω,

W-CDMA,

3 GPP test model 1, 64 DPCH,

2 carriers, Clipping 100%

f1 = 2.135 GHz

f2 = 2.145 GHz

( f = 10 MHz)

IM3, IDset = 2 A

IM3, IDset = 3 A

IM5, IDset = 2 A

IM5, IDset = 3 A

IM5@Bandwidth = 3.84 MHz

IM3@Bandwidth = 3.84 MHz

10 MHz 10 MHz

10 MHz

(SET I

DEPENDENCE)

/IM

vs. AVERAGE OUTPUT POWER

(SET I

DEPENDENCE)

VDS= 12 V, IDset = 2 A

Rg = 0.6 Ω,

W-CDMA,

3 GPP test model 1, 64 DPCH,

2 carriers, Clipping 100%

f1 = 2.135 GHz

f2 = 2.145 GHz

( f = 10 MHz)

IDset = 2 A

IDset = 3 A

40 5045353025

Power Added Efficiency add (%)

Average Output Power Pout (dBm)

add

vs. AVERAGE OUTPUT POWER

VDS= 12 V, IDset = 2.0 A

Rg = 0.6 Ω, CW-signal,

f = 2.14 GHz

OUTPUT POWER,

add

Pout

100

35 4540302515

Output Power Pout (dBm)

Input Power Pin (dBm)

Power Added Efficiency

add (%)

add

vs. INPUT POWER

∆

Remark The graphs indicate nominal characteristics.

Data Sheet PG10357EJ02V0DS 3

NES1823M-180

−25

−55

−35

−30

−65

−60

40 5045353025

Adjacent Channel Leakage Power Ratio ACPR (dBc)

Average Output Power P

out

(dBm)

−40

−45

−50

= 12 V,

= 0.6 Ω,

W-CDMA,

3 GPP test model 1, 64 DPCH,

1 carriers, Clipping 100%

f = 2.14 GHz

5 MHz, I

Dset

= 2 A

(SET IDS DEPENDENCE)

ACPR

vs. AVERAGE OUTPUT POWER

5 MHz, I

Dset

= 3 A

10 MHz, I

Dset

= 2 A

10 MHz, I

Dset

= 3 A

5 MHz

10 MHz

5 MHz

10 MHz

f = 5 MHz, 10 MHz

@Bandwidth = 3.84 MHz

∆

Remark The graphs indicate nominal characteristics.

Data Sheet PG10357EJ02V0DS

NES1823M-180

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.ncsd.necel.com/

Data Sheet PG10357EJ02V0DS 5

NES1823M-180

EVALUATION PWB CIRCUIT

OUTPUT

(50 Ω)

STB out

C25

C23 +

C3 C11

C1 C4

L1 L3

BALUN in (gnd)

INPUT

(50 Ω)

STB in

C8 C9

C10

C12

STB in (R)

C26

C24

C6 C13

C2 C5

L2 L4

BALUN in (sig)

STB in (L)

Device in

C29 C27

C21

C17

C15

BALUN out (sig)

C18

C19

C14

STB out (R)

C32 C28

C16

BALUN out (gnd)

STB out (L)

Device out

(12 V)

C31

C20

C22

C30

Data Sheet PG10357EJ02V0DS

NES1823M-180

EVALUATION PWB PARTS LAYOUT

B1 B2

Gate Bias

Drain Bias (12 V)

Drain Bias (12V)

INPUT

(50 Ω)

C26Note

C25Note

C29Note C31Note

C32Note

C30Note

C24

C13

C23

C11

C10

C12

C14

C15

C17

C21

C27

C18

C19

OUTPUT

(50 Ω)

C20

C16

C22

C28

60 mm

69 mm 69 mm

Note Feed-through capacitor

Parts Name Parts Value

C12, C14 1 pF chip capacitor

C4, C5, C11, C13 4 pF chip capacitor

C18, C19 10 pF chip capacitor

C7, C8, C9, C10 12 pF chip capacitor

C15, C16 22 pF chip capacitor

C1, C2, C3, C6 1 000 pF chip capacitor

C25, C26, C29, C30, C31, C32 1 000 pF feed-through capacitor

C17, C20 0.1

F chip capacitor

C21, C22 10

F chip capacitor (25 V)

C23, C24, C27, C28 100

F Electrolytic capacitor (25 V)

R3, R4, R5, R6 2.2 Ω chip resistor (1/4 W)

R1, R2 10 Ω chip resistor (1/4 W)

B1, B2 BALUN

Circuit Board Material ; Teflon, Er = 2.6,

PWB Thickness : 0.8 mm,

Cu-Pattern Thickness : 18

BALUN

(An example of Assembly)

24.5 mm

7 mm

Data Sheet PG10357EJ02V0DS 7

NES1823M-180

PACKAGE DIMENSIONS

T-92M (UNIT: mm)

PIN CONNECTIONS

G1, G2

D1, D2

: Gate

: Drain

: Source

4.0±0.3 1.4±0.3

30.4±0.25

8.0±0.20.6±0.3

17.4±0.15

9.7±0.2

35.2±0.25

23.9±0.3

2.6±0.3

4–R1.3

4–C1.5

D1 D2

G1 G2

45˚

2.4±0.2

5.7 MAX.

2.1±0.3

2.7 MIN.2.7 MIN.

Data Sheet PG10357EJ02V0DS

NES1823M-180

RECOMMENDED MOUNTING CONDITIONS FOR CORRECT USE

(1) Fix to a heat sink or mount surface completely with screws at the four holes of the flange.

(2) The recommended torque strength of the screws is 29.4 N⋅cm typical using M2.3 type screws.

(3) The recommended flatness of the mount surface is less than ±10

m (roughness of surface is ∇∇∇).

RECOMMENDED SOLDERING CONDITIONS

This product should be soldered and mounted under the following recommended conditions. For soldering

methods and conditions other than those recommended below, contact your nearby sales office.

Soldering Method Soldering Conditions Condition Symbol

Partial Heating Peak temperature (terminal temperature) : 350°C or below

Soldering time (per terminal of device) : 3 seconds or less

Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below

HS350-P3

Caution Do not use different soldering methods together (except for partial heating).

DEFINIITON OF THERMAL RESISTANCE

This thermal resistance (Rth : channel to case) guaranteed in the electrical characteristics shows the value between

chip surface and the backside surface of the package.

The thermal resistance between chip surface and mount surface is 0.2 (MAX.) °C/W larger than the thermal

resistance value guaranteed in the electrical characteristics, when the package is under the above-mentioned

recommendation mounting condition screwed down.

Data Sheet PG10357EJ02V0DS 9

NES1823M-180

M8E 00. 4 - 0110

The information in this document is current as of October, 2004. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or

data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all

products and/or types are available in every country. Please check with an NEC sales representative

for availability and additional information.

No part of this document may be copied or reproduced in any form or by any means without prior

written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.

NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of

third parties by or arising from the use of NEC semiconductor products listed in this document or any other

liability arising from the use of such products. No license, express, implied or otherwise, is granted under any

patents, copyrights or other intellectual property rights of NEC or others.

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of customer's equipment shall be done under the full

responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third

parties arising from the use of these circuits, software and information.

While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers

agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize

risks of damage to property or injury (including death) to persons arising from defects in NEC

semiconductor products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment, and anti-failure features.

NEC semiconductor products are classified into the following three quality grades:

"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products

developed based on a customer-designated "quality assurance program" for a specific application. The

recommended applications of a semiconductor product depend on its quality grade, as indicated below.

Customers must check the quality grade of each semiconductor product before using it in a particular

application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support)

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's

data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not

intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness

to support a given application.

(Note)

(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.

and also includes its majority-owned subsidiaries.

(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for

NEC (as defined above).

•

Data Sheet PG10357EJ02V0DS

NES1823M-180

Caution GaAs Products This product uses gallium arsenide (GaAs).

GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe

the following points.

• Follow related laws and ordinances when disposing of the product. If there are no applicable laws

and/or ordinances, dispose of the product as recommended below.

1. Commission a disposal company able to (with a license to) collect, transport and dispose of

materials that contain arsenic and other such industrial waste materials.

2. Exclude the product from general industrial waste and household garbage, and ensure that the

product is controlled (as industrial waste subject to special control) up until final disposal.

• Do not burn, destroy, cut, crush, or chemically dissolve the product.

• Do not lick the product or in any way allow it to enter the mouth.

NEC Compound Semiconductor Devices Hong Kong Limited

E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general)

Hong Kong Head Office

Taipei Branch Office

Korea Branch Office

TEL: +852-3107-7303

TEL: +886-2-8712-0478

TEL: +82-2-558-2120

FAX: +852-3107-7309

FAX: +886-2-2545-3859

FAX: +82-2-558-5209

NEC Electronics (Europe) GmbH http://www.ee.nec.de/

TEL: +49-211-6503-0 FAX: +49-211-6503-1327

California Eastern Laboratories, Inc. http://www.cel.com/

TEL: +1-408-988-3500 FAX: +1-408-988-0279

0406

NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/

E-mail: salesinfo@ml.ncsd.necel.com (sales and general)

techinfo@ml.ncsd.necel.com (technical)

Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579

For further information, please contact

NES1823M-180