M28256-12KA6T - STMicroelectronics

February 2001 1/5

QREE0032

QUALIFICATION REPORT

PDIP28 ChipP AC A ssem bly Pl ant Tran sfer

Using the M28256

THIS R EPO R T

This Qualification Report summarizes the rel iability t rials and results performed to qualify the transfer of

the assembly pl ant of our subcontractor ChipPAC from Korea to China for P DIP28 package (Plasti c Dual

In lin e Package).

This docume nt serves f or the quali fication of the a ssembly plant, using the produc ts . Test cond itions are

presented in Table 2 and results in Tabl e 3.

Table 1. Product and Proce ss used for Qualification

PRODUCT DESCRIPTION

The M2 8256 is 256 Kbits EEP ROM wi th parallel interface orga nized a s 32Kx8 bi ts. These produc ts are

already qualified, and in production.

PROCESS DESCRIPTION

The CMOSF6 Double Poly (DP) process is already qualified, and in production for EEPROM memory

products.

Product Package Process Fab Line

M28256 PDIP28 CMOSF6DP Agrate

QREE0032 - QUALIFICATION REPORT

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Table 2. Plastic package qualif ication, Package-related tests

M28256, PDIP28, CMOSF6DP

No te : 1. Cri teria 0/60 mea ns: acc epted with 0 rej ects out of 6 0units (rejected with 1 r ej ect).

Sub

group Test Procedure Method Test Conditions Num of

Lots Criteria1

1 Temperature Shock Mil Std 883

Method 1011B –55 °C / +125 °C, 500 shocks 1 0/25

2 Temperature Cycling Mil Std 883

Method 1010C –65 °C / +150 °C, 1000 cycles 1 0/60

3Temperature and Humidity

Biased CECC 90000 85 °C, 85% RH, 5.5 V, 1000 hr 1 0/60

4 Pressure Pot Internal spec. 121 °C, 2 atm, 100% RH, 240 hr 1 0/60

5 High Temperature Bake Mil Std 883

Method 1005 150 °C, 1000 hr

or 200 °C, 500 hr 1 0/60

3/5

QREE0032 - QUALIFICATION REPORT

Table 3. Package qualification, Results

M28256, PDIP28, CMOSF6DP

Sub

group Test Procedure Test Conditions M28256

1 Temperature Shock –55 °C / +125 °C, 100 shocks 0/25

–55 °C / +125 °C, 500 shocks 0/25

2 Temperature Cycling –65 °C / +150 °C, 500 cycles 0/80

–65 °C / +150 °C, 1000 cycles 0/80

3 Temperature and Humidity Biased 85 °C, 85% RH, 5.5 V, 500 hr 0/80

85 °C, 85% RH, 5.5 V, 1000 hr 0/80

4 Pressure Pot 121 °C, 2 atm, 100% RH, 168 hr 0/80

121 °C, 2 atm, 100% RH, 240 hr 0/80

5 High Temperature Bake 150 °C, 500 hr 0/80

150 °C, 1000 hr 0/80

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Table 4. Revision Hi story

Date Description

14-Dec-2000 Document written

5/5

QREE0032 - QUALIFICATION REPORT

If you have any questions or suggestions concerning the matters raised in this document, please send

them to the following electronic mail addresses:

ask.memory@st.com

(for general enquiries)

Please remember to include your name, compa ny , location, telephone num ber and fax number.

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No lic ense is granted

by i m pl i cation or oth erwise unde r any pat ent or paten t rights of STMi croelectronics. Specifications ment i oned in this p ublicat i on are subject

to change without notice. This publication supersedes and repl aces all information previously supplied. STMicroel ectronics products are not

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