All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DISCONTINUED 1 of 10 Rev. 06, 2013-05-16
PTFA091203EL
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
VDD = 30 V, IDQ = 1050 mA, POUT = 28 W Avg
ƒ1 = 950 MHz, ƒ2 = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.0 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps — 17 — dB
Drain Efficiency hD — 27 — %
Intermodulation Distortion IMD — –36 — dBc
Thermally-Enhanced High Power RF LDMOS FETs
120 W, 920 – 960 MHz
Description
The PTFA091203EL is a 120-watt, internally-matched FET intended
for use in power amplifier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced
open cavity ceramic package. Manufactured with Infineon's ad-
vanced LDMOS process, this device provides excellent thermal
performance and superior reliability..
PTFA091203EL
Package H-33288-6
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance,
960 MHz, 30 V
- Average output power = 28 W
- Gain = 17 dB
- Efficiency = 27%
- Intermodulation Distortion = –36 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P1dB = 140 W
- Gain = 17 dB
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
120 W (CW) output power
• Pb-free and RoHS-compliant
0
5
10
15
20
25
30
35
40
-55
-50
-45
-40
-35
-30
-25
-20
-15
32 34 36 38 40 42 44 46 48
Drain Efficiency (%)
Intermodulation Distortion (dBc)
Output Power (dBm)
Two-carrier WCDMA Performance
3GPP signal, 10 MHz carrier spacing,
BW = 3.84 MHz, PAR = 8 dB
V
DD
= 30 V , I
DQ
= 1.05 A
960 MHz
940 MHz
920 MHz
Efficiency
IMD Low
IMD Up
discontinued product
Data Sheet – DISCONTINUED 2 of 10 Rev. 06, 2013-05-16
PTFA091203EL
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1050 mA, POUT = 110 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 17 18 — dB
Drain Efficiency hD 38 40 — %
Intermodulation Distortion IMD — –30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.07 — W
Operating Gate Voltage VDS = 30 V, IDQ = 1050 mA VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 120 W CW) RqJC 0.42 °C/W
Ordering Information
Type and Version Package Type Package Description Shipping
PTFA091203EL V4 H-33288-6 Thermally-enhanced slotted flange, single-ended Tray
PTFA091203EL V4 R250 H-33288-6 Thermally-enhanced slotted flange, single-ended Tape & Reel, 250 pcs
discontinued product
PTFA091203EL
Data Sheet – DISCONTINUED 3 of 10 Rev. 06, 2013-05-16
Typical Performance (data taken in a production test fixture)
Broadband Circuit Impedance
Frequency Z Source W Z Load W
MHz R jX R jX
910 1.42 –2.36 2.43 –3.11
920 1.40 –2.21 2.41 –2.97
930 1.38 –2.07 2.39 –2.83
940 1.35 –1.92 2.37 –2.68
950 1.33 –1.78 2.36 –2.54
960 1.32 –1.64 2.34 –2.40
970 1.30 –1.50 2.33 –2.26
0.1
0.2
0.1
7
0.1
0.3
0
.2
-
W
AV
E
LE
N
GT
H
ST
O
W
AR
D
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
6
1
7
2
8
4
0
Z Source
970 MHz
910 MHz
910 MHz
Z Load
970 MHz
0
5
10
15
20
25
30
35
40
45
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
33 35 37 39 41 43 45 47 49
Drain Efficiency (%)
Intermodulation Distortion (dBc)
Average Output Power (dBm)
Two-tone Drive Up
V
DD
= 30V, I
DQ
= 1.05 A
Efficiency
IMD3
960 MHz
940 MHz
920 MHz
10
20
30
40
50
60
15
16
17
18
19
20
36 38 40 42 44 46 48 50 52
Drain Efficiency (%)
Gain (dB)
Output Power (dBm)
CW Conditions
V
DD
= 30V, I
DQ
= 1.05 A
Efficiency
Gain
960 MHz
940 MHz
920 MHz
Z0 = 50 W
Z Source Z Load
G
S
D
discontinued product
Data Sheet – DISCONTINUED 4 of 10 Rev. 06, 2013-05-16
PTFA091203EL
Reference Circuit
Reference circuit input schematic for ƒ = 960 MHz
Reference circuit output schematic for ƒ = 960 MHz
TL113
TL114
TL115
TL116
TL117
TL118
TL119 TL120
TL121
TL122 TL123
TL124
TL101
TL102
C108
33 pF
1 2
3
TL128
1 2
3
TL129
12
3
TL130
1 2
3
TL131
1 2
3
TL132
12
3
TL133 TL134
TL135
TL136
TL103
TL104
TL105
TL106
TL107
TL108
TL109
TL110
TL111
TL112
C104
10000 pF
C105
4710000 pF R102
5100 Ohm
R101
10 Ohm
C101
4.7 pF
C102
10000 pF
R103
10 Ohm
C106
5.1 pF
C107
6.2 pF
C804
10000
C805
10000 pF
1 2
3
TL125
1 2
3
TL126
1 2
3
TL127
S
C
B
E
1
2
3
4
S2
3
S1
In Out
NC NC
1
2 3
45
6 7
8
S3
R803
1000 Ohm C803
10000 R801
1300 Ohm
R805
1200 Ohm C801
100000 pF
C802
100000 pF
R804
10 Ohm
R802
10 Ohm
C103
33 pF
RF_IN GATE DUT
(Pin A)
a091203el_bdin_09-07-2010
TL201
TL202
TL203
TL204
TL205 TL206
TL207
TL208
1
2
3
4
TL209 TL210
TL211
TL212 TL213
C201
1000000 pF
C202
10000000 pF
C203
10000000 pF
C204
10000000 pF
C205
10000000 pF
TL214
C206
10000000 pF
C207
10000000 pF
12
3
TL215
C208
1000000 pF
C209
10000000 pF
C210
10000000 pF
12
3
TL216
1
2
3
TL217
TL218
TL219
TL220
TL221
RF_OUT
12
3
TL222
12
3
TL223
1
2
3
TL224
TL225
TL226
VDD
C211
20000 pF
1
2
3
4
TL227
C212
33 pF
C213
1.5 pF
C214
1.5 pF
C215
20000 pF
1
2
3
4
TL228
a091203el_bdout_09-07-2010
DUT
(Pin D)
DRAIN DUT
(Pin C)
DUT
(Pin D)
VDD
discontinued product
PTFA091203EL
Data Sheet – DISCONTINUED 5 of 10 Rev. 06, 2013-05-16
Reference Circuit (cont.)
Description
DUT PTFA091203EL
PCB 0.760 mm [.030"] thick, er = 3.48, Rogers 4350, 1 oz. copper
Electrical Characteristics at 960 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL101, TL102, TL122, W = 0.762 W = 30
TL123, TL124
TL103 0.059 λ, 8.94 W W = 15.240, L = 10.287 W = 600, L = 405
TL104, TL106 0.040 λ, 51.58 W W = 1.651, L = 7.620 W = 65, L = 300
TL105 0.086 λ, 38.82 W W = 2.540, L = 15.900 W = 100, L = 626
TL107 0.007 λ, 78.27 W W = 0.762, L = 1.270 W = 30, L = 50
TL108 0.002 λ, 38.82 W W = 2.540, L = 0.330 W = 100, L = 13
TL109 0.015 λ, 78.27 W W = 0.762, L = 2.921 W = 30, L = 115
TL110 0.098 λ, 78.27 W W = 0.762, L = 19.050 W = 30, L = 750
TL111 0.004 λ, 51.58 W W = 1.651, L = 0.762 W = 65, L = 30
TL112 0.026 λ, 78.27 W W = 0.762, L = 5.080 W = 30, L = 200
TL113 0.014 λ, 36.29 W W = 2.794, L = 2.642 W = 110, L = 104
TL114 0.039 λ, 8.94 W W = 15.240, L = 6.731 W = 600, L = 265
TL115 0.033 λ, 51.58 W W = 1.651, L = 6.302 W = 65, L = 248
TL116 0.001 λ, 36.29 W W = 2.794, L = 0.254 W = 110, L = 10
TL117 0.007 λ, 51.58 W W = 1.651, L = 1.270 W = 65, L = 50
TL118, TL119, TL120, W = 1.651 W = 65
TL121
TL125, TL126, TL127, 0.011 λ, 36.29 W W1 = 2.794, W2 = 2.794, W3 = 2.032 W1 = 110, W2 = 110, W3 = 80
TL128
TL129, TL131 0.012 λ, 36.29 W W1 = 2.794, W2 = 2.794, W3 = 2.286 W1 = 110, W2 = 110, W3 = 90
TL130 0.015 λ, 8.94 W W1 = 15.240, W2 = 15.240, W3 = 2.540 W1 = 600, W2 = 600, W3 = 100
TL132 0.004 λ, 8.94 W W1 = 15.240, W2 = 15.240, W3 = 0.762 W1 = 600, W2 = 600, W3 = 30
TL133 0.000 λ, 38.82 W W1 = 2.540, W2 = 2.540, W3 = 0.025 W1 = 100, W2 = 100, W3 = 1
TL134 W1 = 17.780, W2 = 12.700 W1 = 700, W2 = 500
TL135 W1 = 2.540, W2 = 15.240 W1 = 100, W2 = 600
TL136 0.003 λ, 78.27 W W = 0.762, L = 0.508 W = 30, L = 20
table continued on page 6
discontinued product
Data Sheet – DISCONTINUED 6 of 10 Rev. 06, 2013-05-16
PTFA091203EL
Reference Circuit (cont.)
Electrical Characteristics at 960 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201, TL221 0.058 λ, 51.58 W W = 1.651, L = 10.922 W = 65, L = 430
TL202 0.014 λ, 51.58 W W = 1.651, L = 2.720 W = 65, L = 107
TL203, TL204 0.000 λ, 146.88 W W = 0.025, L = 0.025 W = 1, L = 1
TL205 0.014 λ, 38.82 W W = 2.540, L = 2.540 W = 100, L = 100
TL206 0.013 λ, 51.58 W W = 1.651, L = 2.540 W = 65, L = 100
TL207 0.128 λ, 10.17 W W = 13.208, L = 22.352 W = 520, L = 880
TL208, TL226 0.014 λ, 23.03 W W = 5.080, L = 2.540 W = 200, L = 100
TL209 W1 = 5.080, W2 = 0.025, W3 = 5.080 W1 = 200, W2 = 1, W3 = 200,
W4 = 0.025 W4 = 1
TL210, TL211, TL212, TL213 W = 1.651 W = 65
TL214, TL225 0.090 λ, 28.85 W W = 3.810, L = 16.398 W = 150, L = 646
TL215, TL223 0.021 λ, 28.85 W W1 = 3.810, W2 = 3.810, W3 = 3.810 W1 = 150, W2 = 150, W3 = 150
TL216, TL222 0.004 λ, 28.85 W W1 = 3.810, W2 = 3.810, W3 = 0.762 W1 = 150, W2 = 150, W3 = 30
TL217, TL224 0.021 λ, 23.03 W W1 = 5.080, W2 = 5.080, W3 = 3.810 W1 = 200, W2 = 200, W3 = 150
TL218 (taper) 0.015 λ, 23.03 W / 38.82 W W1 = 5.080, W2 = 2.540, L = 2.794 W1 = 200, W2 = 100, L = 110
TL219 (taper) 0.064 λ, 10.17 W / 23.03 W W1 = 13.208, W2 = 5.080, L = 11.176 W1 = 520, W2 = 200, L = 440
TL220 0.004 λ, 51.58 W W = 1.651, L = 0.762 W = 65, L = 30
TL227, TL228 W1 = 3.810, W2 = 2.540, W3 = 3.810 W1 = 150, W2 = 100, W3 = 150,
W4 = 2.540 W4 = 100
See further reference circuit information on next page
discontinued product
PTFA091203EL
Data Sheet – DISCONTINUED 7 of 10 Rev. 06, 2013-05-16
Reference Circuit (cont.)
Circuit Assembly Information
Test Fixture Part No. LTN/PTFA091203EF
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Reference circuit assembly diagram (not to scale)
+
S3
S1
S2
C102
R804
R803
R802
R801
R805
R102 C801
C802
C803
C101
C103
C104 C105
C106
R103
C107
C108
R101
+
10 µF
+
10 µF
+
10 µF
+
10 µF
a091203el_CD_11-12-2010
PTFA091203_OUT_01 RO4350, .030 (62)
PTFA091203_IN_01 RO4350, .030 (62)
C804
C805
C201
C205
C202
C212
C213
C214
C208
C209
C210
C211
C203
C206
C204
C207
C215
RF_IN RF_OUT
VDD
VDD
VDD
discontinued product
Data Sheet – DISCONTINUED 8 of 10 Rev. 06, 2013-05-16
PTFA091203EL
Reference Circuit (cont.)
Component Description Suggested Manufacturer P/N
Input
C101 Chip capacitor, 4.7 pF ATC ATC100B4R7BW500XB
C102 Chip capacitor, 10000 pF ATC ATC200B103MW
C103, C108 Chip capacitor, 33 pF ATC ATC100B330FW500XB
C104 Chip capacitor, 0.01 µF ATC ATC200B103MW
C105 Chip capacitor, 4.71 µF Digi-Key 493-2372-2-ND
C106 Chip capacitor, 5.1 pF ATC ATC100B5R1BW500XB
C107 Chip capacitor, 6.2 pF ATC ATC100B6R2BW500XB
C801, C802 Chip capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C803, C804, C805 Capacitor, 0.01 µF Digi-Key PCC1772CT-ND
R101, R103, R802, R804 Resistor, 10 W Digi-Key P10ECT-ND
R102 Resistor, 5100 W Digi-Key P5.1KECT-ND
R801 Resistor, 1300 W Digi-Key P1.3KGCT-ND
R803 Resistor, 1000 W Digi-Key P1.0KECT-ND
R805 Resistor, 1200 W Digi-Key P1.2KGCT-ND
S1 Potentiometer, 2k W Digi-Key 3224W-202ECT-ND
S2 Transistor Digi-Key BCP5616TA-ND
S3 Voltage Regulator Digi-Key LM78L05ACM-ND
Output
C201, C208 Chip capacitor, 1 µF Digi-Key 478-3993-2-ND
C202, C203, C206, C207 Capacitor, 10 µF Digi-Key 281M5002106K
C204, C205, C209, C210 Capacitor, 10 µF Digi-Key 587-1818-2-ND
C211, C215 Chip capacitor, 20000 pF ATC ATC200B203MW
C212 Chip capacitor, 33 pF ATC ATC100B330FW500XB
C213, C214 Chip capacitor, 1.5 pF ATC ATC100B1R5BW500XB
discontinued product
PTFA091203EL
Data Sheet – DISCONTINUED 9 of 10 Rev. 06, 2013-05-16
Package Outline Specifications
Package H-33288-6
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.inneon.com/rfpower
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G = gate, S = source, D = drain, V = VDD, E, F = N.C.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
discontinued product
Data Sheet – DISCONTINUED 10 of 10 Rev. 06, 2013-05-16
Edition 2013-05-16
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended
to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFA091203EL V4
Revision History: 2013-05-16 Discontinued Data Sheet
Previous Version: 2010-11-12 Data Sheet
Page Subjects (major changes since last revision)
All Product Discontinued. Please see PD Notes : PD_044_13
discontinued product