FARRIS SEMICONDUCTOR HA-5002/883 Monolithic, Wideband, High Slew Rate, aD CAUTION: These devices are sensitive ta electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright Harris Corporation 1994 Spec Number 511017-883 3-83 File Number 3705 July 1994 High Output Current Buffer Features Description * This Circuit is Processed in Accordance to MIL-STD- The HA-5002/883 is a monolithic, wideband, high slew rate, 883 and is Fully Conformant Under the Provisions of high output current, buffer amplifier. Paragraph 1.2.1. Utilizing the advantages of the Harris Dielectric Isolation tech- * Voltage Gain (Ry = 1k02)......+--. +. 20e. cose (Min) nologies, the HA-5002/883 current buffer offers 1300V/us -995 (Typ) slew rate typically and 1000V/1s minimum with 110MHz of (Ry = 100Q) ................ 0.96 (Min) | bandwicth. The 100mA minimum output current capability is 0.971 (Typ) enhanced by a 3Q output impedance. High Input Impedance................. 1.5MQ (Min) The monolithic HA-5002/883 will replace the hybrid LHOO02 3MQ (Typ) with corresponding performance increases. These charac- teristics range from the 3MQ (typ) input impedance to the + Low Output Impedance.................. 5Q (Max) increased output voltage swing. Monolithic design technolo- 3 (Typ) gies have allowed a more precise buffer to be developed * Very High Slew Rate ............... 1000V/us (Min) With more than an order of magnitude smaller gain error. The 3 1300V/us (Typ) voltage gain is 0.98 guaranteed minimum with a 1kQ load qo and 0.96 minimum with a 1009 load. zo Wide Small Signal Bandwidth. ........ 110MHz (Typ) The HA-5002/ F 4 hybrid 2 rz e 5 883 will provide many present hybrid users 5 * High Output Current ...............+. 100mA (Min) with a higher degree of reliability and at the same time ae a * High Pulsed Output Current........... 400mA (Max) increase overall circuit performance. Ww = Monolithic Dielectric Isolation Construction * Replaces Hybrid LHO002 Ordering Information Applications PART TEMPERATURE NUMBER RANGE PACKAGE * Line Driver * Data Acquisition HA2-5002/883 55C to +125C =| 8 Pin Can * 110MHz Buffer HA4-5002/883 | -55C 10 +125C | 20 Lead Ceramic LCC High Power Current Booster * High Power Current Source HA7-5002/863 55C to +125C =| 8 Lead CerDIP Sample and Holds Radar Cable Driver * Video Products Pinouts HA-5002/883 HA-5002/883 HA-5002/883 (CERDIP) (METAL CAN) TOP VIEW TOP VIEW wd v.+G Ta] our ve: [2] [7] ve+ ne [3] re] Nc in [a rs] vy-Specifications HA-5002/883 Absolute Maximum Ratings Thermal Information Voltage Betwaen V+ and V- Terminals. ............0..-..- 44V ss Thermal Resistance CITY Bic Input Voltage... 6... eee c eee ene Equal to Supplies CerDIP Package ......... 00.0 eee eee 115CAW =. 28C/W Peak Output Current (50ms On, ts Off}...............005 +400mA Ceramic LCC Package ...........5.5 B5C(W1SC/AW Junction Temperature (Tj) 2.6... ec cee eee eee +175C Matal Can Package............-.-.. 155CAW 67C/W Storage Temperature Ranga ..............60, -65C to +150C Package Power Dissipation Limit at +75C for Ty s +175C. ESD Rating. .......... 0... ccc cece eee ene eee <4000V CerDIP Package ...... 6. cee eee cece eres 870mW Lead Temperature (Soldering 10s).................... +300C Ceramic LCC Package ...........0. cece eee n seen 1.54W Metal Can Package ..... 6... ccc ccc cree eens 645mW Package Power Dissipation Derating Factor Above +75C CerDIP Package ...... 0. ccc eet eee e eens 8.7mMWPC Ceramic LCC Package ........ 0. : essere eee eee 15.4mWPC Motal Can Package 0.0... 0... cece cee eee eee 6.5mWPC CAUTION: Stresses above those listed in Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the davice at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range................ -55C to +125C = AL > 1000 Operating Supply Voltage.......... 0... eee eee eee +12V to +15V TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: Veuppyy = t12V and 15V, Regurce = 50Q, Croan = 10pF, Vin = OV, Uniess Otherwise Specified. LIMITS GROUP A PARAMETERS | SYMBOL CONDITIONS SUBGROUPS TEMPERATURE MIN MAX UNITS Input Offset Vio | Veup = 15V 1 +25C -20 20 mV Voltage 2,3 +125C, -55C -30 30 mV Viog | Vsup = 12V 1 +25C -20 20 mv 2,3 +125C, -55C 30 30 mV Input Bias Current lay Vsup = 15V, Rg = 1kQ 1 425C 7 7 pA 2,3 +125C, -55C -10 10 HA lee Vgup = 12V, Rg = 1kQ 1 +25C 7 7 pA 2,3 +125C, -55C +10 10 pa Voltage Gain 1 +AV, | Voup = 12V, A = 1kQ, 1 +25C 0.98 - VN Vin = 10V 2,3 +125C, -55C 0.98 . VN AV, | Veup = 12V, Ry = 1kQ, 1 +25C 0.98 : VV Vin = -10V 2,3 +125C, -55C 0.98 - VN Voltage Gain 2 +AV. | Vgyp = t12V, Ry = 1009, 1 +25C 0.96 : VV Vin = 10V AV. | Voyp = #142V, R, = 1000, 1 +25C 0.96 - VN Vin = -10V Voltage Gain 3 +AV, | Voup = t15V, R, = 1000, 1 +25C 0.96 : vv Viy = 10V AV, | Vgyp = +15V, A = 1009, 1 +25C 0.96 - viv Vin = -10V Spec Number 511017-883 3-84Specifications HA-5002/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: Veuppyy = 12V and +15V, Aggurce = 502, Cioap S$ 10PF, Viy = OV, Unless Otherwise Specified. 3-85 LIMITS GROUP A PARAMETERS | SYMBOL CONDITIONS SUBGROUPS TEMPERATURE MIN MAX UNITS Voltage Gain 4 +AV, Vsup = t15V, 1 +25C 0.99 : VN R, = 1k, Viy = +10V 2,3 +125C, -55C 0.99 - vv -AV, Veup = t15V, 1 +25C 0.99 - VV R, = 1kQ, Vin = -10V 2,3 +125C, -55C 0.99 : VN Output Voltage +Vour: | Vsup = 15V, 1 +25C 10 - Vv Swing R, = 1000, Vin = +15V 2,3 +125C, -55C 10 - Vv Vout: | Vsup = +15V, 1 +25C - +10 Vv R, = 1002, Vin = -15V 2,3 +125C, -55C - -10 v +Voutz Veup = t15V, 1 +25C 10 : Vv R, = 1kQ, Vin = +15V 2,3 +125C, -55C 10 : v -Voute | Vsup = 115V, 1 +25C - -10 Vv RA, = 1k2, Viy = -15V 2,3 +125C, -55C - -10 Vv +Vouras | Vsup = 12V, 1 +25C 10 - v R, = 1kQ, Vin = 412V 2,3 +125C, -55C 10 - v -Vouts | Vsup = +12V, 1 +25C - -10 v R, = 1kQ, Vin = -12V 2,3 +125C, -65C : -10 v Output Current +louti Vsup = 15V, 1 +25C. 100 - mA Voyr = +10V 2,3 +125C, -55C 100 - mA lout: | Vsup = +15V, 1 +25C : -100 mA Vour = -10V 2,3 +125C, -55C - -100 mA toute | Vou = 212V, 1 425C 100 - mA Vour = +10V 2,3 +125C, -55C 100 - mA lout2 | Vsup = 12V, 1 +25C - -100 mA Vout = -10V 2,3 +125C, -55C -100 mA Power Supply +PSRR, | AVgup = +5V, 1 +25C 54 - dB Rejection Ratio V+ = +20V, V- = -15V, V+ = +10V, V- = -15V 2,3 +125C, -65C 54 - dB -PSRR, | AVsyp = +5V, 1 +25C 54 - dB V+ = +15V, V- = -20V, V+ = +15V, V- = -10V 2,3 +125C, -55C 54 - dB +PSRR, | AVsup = t5V, 1 +25C 54 : dB V+=+17V, V-= 12V, V+ = 47V, V- = -12V 2,3 +125C, -55C 54 - dB -PSRR2 | AVgyp = +5V, 1 +25C 54 : dB V+ = 4+12V, V- = -17V, V+ = +12V, V-=-7V 2,3 +125C, -55C 54 - dB Spec Number 511017-883 OPERATIONAL AMPLIFIERSSpecifications HA-5002/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: Veuppry = +12V and 15V, Reource = 502, Clogp S 10pF, Viy = OV, Uniess Otherwise Specified. LUMITS GROUP A PARAMETERS | SYMBOL CONDITIONS SUBGROUPS | TEMPERATURE MIN MAX UNITS Power Supply +ICC, Vsup = t15V, 1 425C - 10 mA Current Vout = OV 2,3 +125C, -55C - 10 mA -ICC, Vgup = +15V, 1 +25C -10 - mA Vout = OV 2,3 +125C, -58C -10 - mA +1CCy | Vgup = 12V, 1 +25C . 10 mA Vout = OV 2,3 +128C, -55C - 10 mA ICC Veup = 112V, 1 +25C 10 - mA Vour = OV 2,3 +125C, -55C -10 - mA TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See AC Specifications in Table 3 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: Vguppry = 15V or 12V, Rigap = 1k2, CLoap S$ 10pF, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Input Resistance Pins Veyp = 15V 1 425C 1.5 : MQ Pine Vsup =tt2V 1 +25C 1.5 - MQ Slaw Rate +SR, Vsup = 15V, 1 425C 1000 : Vis Vout = -5V to +5V +128C, -55C 1000 - Vius -SR, Veup = t15V, 1 +25C 1000 - Vis Vout = +5V to -5V +125C, -55C 1000 : Vins +SR, Vsup = 12V, 1 +25C 1000 - Vis Vout = -5V to +5V +125C, -55C 1000 - Vius SR Vsup = 12V, 1 +25C 1000 - Vius Vout = +5V to -5V +125C, -55C 1000 - Vius Rise and Fall Time Tr Vsup = t15V or +12V, 1,2 425C : 10 ns Vout = 0 to +500mV 1,2 +125C, -55C - 10 ns Tr Voyp = 15V or +12V, 1,2 +25C - 10 ns Vout = 0 to -500mV 1,2 +125C, -55C - 10 ns Spec Number 511017-883 3-86Specifications HA-5002/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: Vsuppry = 15V or 12V, Alcan = 1kQ, Croan S 10pF, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS Overshoot +0S Vgup = 12 or t15V, 1 +25C - 30 % Vour = 0 to +500mV +125C, -55C - 30 % -OS Veup = t12V or t15V, 1 +25C : 30 % Vout = 0 to -500mV +125C, -55C - 30 % Quiescent Power PC, Vsup = t15V, 1,3 +25C - 300 mw Consumption Vin = OV, lour = OMA +125C, -55C - 300 mw PCz Vsup = 12V, 1,3 425C - 240 mw Vin = OV, lout = OMA +125C, -55C : 240 mw Output Resistance Rout Veup = t12V 1 425C. - 5 Q 4 qn Rout2 Veyp = t12V 1 +25C - 5 Q z ti NOTES: ES 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param- o & eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization oH < based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Measured between 10% and 90% points. 3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2,3 Group A Test Requirements 1,2,3 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 511017-883 3-87HA-5002/883 Die Characteristics DIE DIMENSIONS: 81 x 80x 19 mils + 1 mils 2050 x 2030 x 483m + 25.4um METALLIZATION: Type: Al, 1% Cu Thickness: 20kA + 2kA GLASSIVATION: Type: Nitride Thickness: 7kA + 0.7kA WORST CASE CURRENT DENSITY: 0.7 x 10 A/cm? at 3.6mA SUBSTRATE POTENTIAL (Powered Up): V1- TRANSISTOR COUNT: 27 PROCESS: Bipolar Dielectric isolation Metallization Mask Layout HA-5002/883 V4- (ALT) V44 (ALT) Vv. HAe5002 Ver TABOIGDA Vit ouT Spec Number 511017-883 3-88