5
Optical/Electrical Characteristics at TA = 25˚C
GaP Red
Devices
HDSP- Parameter Symbol Min. Typ. Max. Units Test Conditions
Luminous Intensity/Dot Iv0.82 1.2 mcd IFP = 40 mA,
(Digit Average)[1] 1/8 Duty Factor
Peak Wavelength λpeak 632 nm IF = 20 mA
Dominant Wavelength[2] λd622 nm IF = 20 mA
Forward Voltage VF2.1 2.4 V IF = 20 mA
Reverse Voltage[3] VR3.0 V IR = 100 µA
Luminous Intensity Iv-m 2:1 IFP = 40 mA,
Matching Ratio 1/8 Duty Factor
GaP Green
Devices
HDSP- Parameter Symbol Min. Typ. Max. Units Test Conditions
Luminous Intensity/Dot Iv1.0 1.5 mcd IFP = 40 mA,
(Digit Average)[1] 1/8 Duty Factor
Peak Wavelength λpeak 568 nm IF = 20 mA
Dominant Wavelength[2] λd573 nm IF = 20 mA
Forward Voltage VF2.3 2.6 V IF = 20 mA
Reverse Voltage[3] VR3.0 V IR = 100 µA
Luminous Intensity Iv-m 2:1 IFP = 40 mA,
Matching Ratio 1/8 Duty Factor
S80E/
S85E
S80G\
S85G
Notes:
1. The digits are categorized for luminous intensity. The intensity category is designated by a letter on the side of the package.
2. The dominant wavelength, λd, is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.
3. Typical specification for reference only. Do not exceed absolute maximum ratings.
Absolute Maximum Ratings at TA = 25˚C
GaP Red GaP Green
Parameter HDSP-S80E/S85E HDSP-S80G/S85G Units
Average Power per Dot[1] 65 65 mW
Peak Forward Current per Dot[1]
(1/8 Duty Cycle at 10 KHz) 8 0 1 0 0 mA
Average Forward Current per Dot 25[1,2] 25[1,3] mA
Reverse Voltage per Dot 3 3 V
Operating Temperature –35 to +85 –35 to +85 °C
Storage Temperature –35 to +85 –35 to +85 °C
Wave Soldering Temperature for 3 seconds[4]
(2 mm [0.078 in.] below Body) 250 250 °C
Notes:
1. Do not exceed maximum average current per dot.
2. Derate above 25°C at 0.20 mA/°C.
3. Derate above 25°C at 0.33 mA/°C.
4. Not recommended to be soldered more than 2 times. Minimum interval between solderings is 15 minutes. Total soldering time not to exceed 3 seconds.