1,310nm MQW-FP Coaxial Laser FLD3C5KM/LK-B KM FEATURES * * * * * -40~+85C operating temperature range Low operating and threshold current Output Power: 1.6mW (Min.) Laser-welding assembly method Long life and high reliability APPLICATIONS * Digital Signal Transmission * Telecommunication Local loop Interoffice and intraoffice * Data communication * LAN LK DESCRIPTION FLD3C5KM/LK-B is an InGaAsP/lnP double heterostructure laser diode module in a small coaxial type package for single mode fiber including an InGaAs PIN monitor photodiode, designed for use in data links and local area networks in the 1.3m wavelength region. The laser diode which uses a specially designed structure, called MQW (Multi Quantum Well), to ensure low operating current and stable CW operation over a wide temperature range. This assures long life and high reliability. The module can operate from -40 to +85C. The monitor photodiode which receives emission power from the rear facet of the laser diode, can be used to control the optical power coupled into the fiber. YAG laser-welding is used in the package assembly for high package stability. Edition 1.0 April 2002 1 1,310nm MQW-FP Coaxial Laser FLD3C5KM/LK-B ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Pfmax 3.0 mW Forward Current (LD) IFmax 150 mA Reverse Voltage (LD) Vrmax 2 V VDRmax 20 V Tsolder 260 (t<10 sec., d>2.5mm) C Storage Temperature Tstg -40 to +90 C Operating Case Temperature Top -40 to +85 C Storage Humidity (Note 1) Xstg 85 % Operating Humidity (Note 1) Xop 85 % Photodiode Reverse Voltage Soldering Temperature Note 1: Storage or operating within 500 hours maximum. OPTICAL AND ELECTRICAL CHARACTERISTICS (Tc=25C) Parameter Limits Typ. Max. Symbol Conditions Min. Fiber Output Power Pf CW 1.6 - - mW Threshold Current Ith CW 5 8 15 mA Operating Current Iop CW, Pf=1.6mW 20 - 40 mA Forward Voltage VF CW, Pf=1.6mW - 1.2 1.5 V Series Resistance Rs CW, Pf=1.6mW - 5 8 Threshold Output Power Pth CW, If=Ith - 20 40 W Slope Efficiency S CW, Pf=1.6mW 60 - 120 W/mA Linearity of dL/dI Svar CW, 0.16 to 2.0mW - - 15 % Saturation of dL/dI Ssat CW, 0.16 to 2.0mW -30 - - % Center Wavelength c CW, Pf=1.6mW 1,290 - 1,330 nm Spectral Width (RMS) CW, Pf=1.6mW - 2.0 3.0 nm Monitor Current Im CW, Pf=1.6mW, VDR=5V 0.2 - 0.8 mA Monitor Dark Current ID VDR=5V - 1.0 50 nA - CW, 0.16 to 2.0mW, VDR=5V - - 10 % Linearity of Pf-Im 2 Unit 1,310nm MQW-FP Coaxial Laser FLD3C5KM/LK-B OPTICAL AND ELECTRICAL CHARACTERISTICS (Tc=-40 to +85C unless otherwise specified) Limits Typ. Max. Symbol Conditions Min. Fiber Output Power Pf CW 1.6 - - mW Threshold Current Ith CW 2 - 35 mA 0.25 - 4.5 - Parameter Threshold Current Ratio Ith(Tc)/Ith(25) Unit Forward Voltage VF CW, Pf=1.6mW - 1.2 1.5 V Series Resistance Rs CW, Pf=1.6mW 2 - 10 Threshold Output Power Pth CW, If=Ith - - 80 W S CW, Pf=1.6mW 30 - 200 W/mA 0.5 - 1.6 - Slope Efficiency Slope Efficiency Ratio S(Tc)/S(25) Linearity of dL/dI Svar CW, 0.16 to 2.0mW - - 20 % Saturation of dL/dI Ssat CW, 0.16 to 2.0mW -30 - - % Center Wavelength c CW, Pf=1.6mW 1,260 - 1,360 nm Spectral Width (RMS) CW, Pf=1.6mW - - 3.0 nm Laser Rise Time Tr Ib=Ith, Ppk=1.6mW,10 to 90% - 0.2 0.4 ns Laser Fall Time Tf Ib=Ith, Ppk=1.6mW,10 to 90% - 0.3 0.5 ns Monitor Current Im CW, Pf=1.6mW, VDR=5V 0.15 - 1.0 mA Monitor Dark Current ID VDR=5V - - 500 nA Monitor Capacitance Ct VDR=5V, f=1MHz - 6 10 pF - CW, 0.16 to 2.0mW, VDR=5V - - 10 % TE Tc=-40 to 85C, Pf=1.6mW at Tc=25C, APC with monitor PD - - 1.0 dB Linearity of Pf-Im Tracking Error 3 1,310nm MQW-FP Coaxial Laser FLD3C5KM/LK-B Fig. 1 Optical Output Power and Monitor Current vs. Forward Current Tc=-40C 2.0 0.8 25C 85C 1.5 0.6 1.0 0.4 0.5 0 140 120 Forward Current, IF(mA) Pf Im 30 100 80 60 40 20 0.2 0 0 0 90 60 Tc=25C 160 1.0 Monitor Current, Im (mA) at VDR=5V Optical Output Power, Pf (mW) 2.5 Fig. 2 Forward Current vs. Forward Voltage 0 0.5 1.0 1.5 2.0 Forward Current, IF (mA) Forward Voltage, VF (V) Fig. 3 Temperature Dependence of Threshold Current Fig. 4 Lasing Spectrum 100 2.5 Tc=25C 20 Relative Intensity (dB) Threshold Current, Ith (mA) Pf=1.6mW 10 0 -20 -40 -60 -80 1300 1 -60 1310 Wavelength (nm) -40 -20 0 20 40 60 80 100 Case Temperature, Tc (C) 4 1320 1,310nm MQW-FP Coaxial Laser FLD3C5KM/LK-B Fig. 5 Temperature Dependence of Center Wavelength Fig. 6 Tracking Characteristics Pf=1.6mW Tracking Error (%) 30 1320 1300 1280 -40 Pf=1.6mW APC with monitor PD 40 1340 20 10 0 -10 -20 -20 0 20 40 60 80 -30 Case Temperature, Tc (C) -40 -50 0 50 100 Case Temperature, Tc (C) Fig. 7 Pulse Response Fig. 8 Frequency Response Tc=25C Pf=1.6mW Ibias=Ith Tc=25C 12 9 Relative Response (dB) Relative Optical Output Center Wavelength, c (nm) 1360 Pf=1.6mW Ip-p=2mA 6 3 0 -3 -6 -9 -12 20 Time (0.5 nsec./div.) 50 100 200 500 1000 Frequency (MHz) 5 2000 1,310nm MQW-FP Coaxial Laser FLD3C5KM/LK-B "KM" PACKAGE UNIT: mm 3 O7.1 2 O6.3 MAX 0.3 4 1 P.C.D.2.54 16.0 120.15 O0.9 4-O0.45 6.7 10 MIN. 2.5 1000 MIN. 32 MAX. 7.4 LD 1 4 CASE PD 2 3 "LK" PACKAGE 45 1 4 2-fl2.5-0.2 fl6.0 MAX. 4-fl0.45-0.1 UNIT: mm 7.4-0.2 3 12.7-0.15 17.0-0.2 PCD 2.54 fl0.9 2-C1.5 2 4-0.2 2 1.0-0.2 12 MIN. 3.7-0.2 7.4-0.2 PD 2 1 LD 3 4 CASE 6 31 MAX. 1000 MIN. 1,310nm MQW-FP Coaxial Laser FLD3C5KM/LK-B For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: www.fcsi.fujitsu.com * Do not put this product into the mouth. FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. (c) 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200 7