Edition 1.0
April 2002
1
1,310nm MQW-FP
Coaxial Laser FLD3C5KM/LK-B
FEATURES
• -40~+85°C operating temperature range
• Low operating and threshold current
• Output Power: 1.6mW (Min.)
• Laser-welding assembly method
• Long life and high reliability
APPLICATIONS
• Digital Signal Transmission
• Telecommunication
Local loop
Interoffice and intraoffice
• Data communication
• LAN
DESCRIPTION
FLD3C5KM/LK-B is an InGaAsP/lnP double heterostructure laser
diode module in a small coaxial type package for single mode fiber
including an InGaAs PIN monitor photodiode, designed for use in
data links and local area networks in the 1.3µm wavelength region.
The laser diode which uses a specially designed structure, called
MQW (Multi Quantum Well), to ensure low operating current and stable
CW operation over a wide temperature range. This assures long life and high
reliability.
The module can operate from -40 to +85°C. The monitor photodiode which receives
emission power from the rear facet of the laser diode, can be used to control the optical power
coupled into the fiber. YAG laser-welding is used in the package assembly for high package stability.
KM
LK
2
1,310nm MQW-FP
Coaxial Laser
FLD3C5KM/LK-B
Parameter
Operating Current
Series Resistance
Linearity of dL/dI
20 -40
-58
--
±15
CW, Pf=1.6mW
CW, Pf=1.6mW
CW, 0.16 to 2.0mW
Threshold Output Power -2040
CW, If=Ith µW
mA
Ω
%
Forward Voltage - 1.2 1.5
CW, Pf=1.6mW V
Fiber Output Power 1.6 - -
CW mW
Threshold Current 5815
CW mA
Slope Efficiency 60 -120
CW, Pf=1.6mW µW/mA
Center Wavelength 1,290 - 1,330
CW, Pf=1.6mW nm
Spectral Width (RMS) - 2.0 3.0
CW, Pf=1.6mW nm
Monitor Current 0.2 - 0.8
CW, Pf=1.6mW, VDR=5V mA
Monitor Dark Current - 1.0 50
VDR=5V nA
Linearity of Pf-Im --±10
CW, 0.16 to 2.0mW, VDR=5V %
Saturation of dL/dI -30 - -
CW, 0.16 to 2.0mW %
Symbol
Pth
VF
Pf
Ith
S
Iop
Rs
λc
σ
Im
ID
-
Svar
Ssat
Conditions Unit
Limits
Typ. Max.Min.
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tc=25°C)
Parameter
Optical Output Power
Forward Current (LD)
Reverse Voltage (LD)
Photodiode Reverse Voltage
Soldering Temperature
Symbol
Pfmax
IFmax
Vrmax
VDRmax
Tsolder
3.0
150
2
20
260 (t<10 sec., d>2.5mm)
Ratings
V
V
°C
mW
mA
Unit
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Operating Case Temperature
Storage Humidity (Note 1)
Operating Humidity (Note 1)
Tstg
Top
Xstg
Xop
-40 to +90
-40 to +85
85
85
%
%
°C
°C
Note 1: Storage or operating within 500 hours maximum.
3
1,310nm MQW-FP
Coaxial Laser FLD3C5KM/LK-B
Parameter
Threshold Current Ratio
Symbol
0.25 -4.5
Threshold Output Power Pth --80CW, If=Ith µW
-
Forward Voltage - 1.2 1.5
CW, Pf=1.6mW VVF
Fiber Output Power 1.6 - -
CW mW
Pf
Threshold Current 2-35CW mA
Ith
Slope Efficiency 30 -200
CW, Pf=1.6mW µW/mA
S
Slope Efficiency Ratio 0.5 -1.6 -
S(Tc)/S(25)
Ith(Tc)/Ith(25)
Series Resistance 2-10
CW, Pf=1.6mW Ω
Rs
Center Wavelength 1,260 - 1,360
CW, Pf=1.6mW nm
λc
Spectral Width (RMS) - - 3.0
CW, Pf=1.6mW nm
σ
Laser Rise Time - 0.2 0.4
Ib=Ith, Ppk=1.6mW,10 to 90%
Ib=Ith, Ppk=1.6mW,10 to 90%
ns
Tr
Laser Fall Time - 0.3 0.5 ns
Tf
Monitor Current 0.15 - 1.0
CW, Pf=1.6mW, VDR=5V mA
Im
Monitor Dark Current
-610
VDR=5V nA
ID
Monitor Capacitance
- - 500
VDR=5V, f=1MHz pF
Ct
Linearity of Pf-Im -- CW, 0.16 to 2.0mW, VDR=5V %-
Tracking Error --±1.0
±10
Tc=-40 to 85°C, Pf=1.6mW
at Tc=25°C,
APC with monitor PD
dBTE
Linearity of dL/dI --
±20
CW, 0.16 to 2.0mW %
Svar
Saturation of dL/dI -30 - -
CW, 0.16 to 2.0mW %
Ssat
Conditions Unit
Limits
Typ. Max.Min.
OPTICAL AND ELECTRICAL CHARACTERISTICS (Tc=-40 to +85°C unless otherwise specified)
4
Fig. 1 Optical Output Power and Monitor Current
vs. Forward Current
Fig. 2 Forward Current vs. Forward Voltage
Forward Current, IF (mA) Forward Voltage, VF (V)
Optical Output Power, Pf (mW)
Monitor Current, Im (mA) at VDR=5V
Forward Current, IF(mA)
1.0
0.5
1.5
Pf
Im
2.0
2.5
0.2
0.4
0.6
1.0
0.8
0
20
40
60
80
100
120
140
160
0
00
30 60 90
Fig. 3 Temperature Dependence of Threshold Current
Case Temperature, Tc (°C)
Threshold Current, Ith (mA)
10
100
-60
1-40 -20 0 20 40 60 80 100
00.5 1.0 1.5 2.0 2.5
Fig. 4 Lasing Spectrum
Wavelength (nm)
Relative Intensity (dB)
-60
-40
-80
-20
20
0
1300 1310 1320
Tc=-40°C
25°C
85°C
Tc=25°C
Tc=25°C
Pf=1.6mW
1,310nm MQW-FP
Coaxial Laser
FLD3C5KM/LK-B
5
Fig. 5 Temperature Dependence of Center Wavelength
Case Temperature, Tc (°C)
Center Wavelength, λc (nm)
-40 -20 0 20 40 60 80
1300
1320
1360
1280
1340
Fig. 6 Tracking Characteristics
Case Temperature, Tc (°C)
Tracking Error (%)
-50 0 50 100
-20
0
40
30
10
-10
-30
-40
20
Pf=1.6mW Pf=1.6mW
APC with monitor PD
Fig. 7 Pulse Response Fig. 8 Frequency Response
Time (0.5 nsec./div.)
Frequency (MHz)
Relative Response (dB)
Relative Optical Output
20 50 100 200 500 1000 2000
12
-12
-9
-6
-3
0
3
6
9
Pf=1.6mW
Ibias=Ith Pf=1.6mW
Ip-p=2mA
Tc=25°CTc=25°C
1,310nm MQW-FP
Coaxial Laser FLD3C5KM/LK-B
6
Ø0.9
Ø7.1
Ø6.3 MAX
23
4
1
14
23
7.4
2.5
4-Ø0.45
P.C.D.2.54
12±0.15
16.0
0.3
10 MIN.
32 MAX.
CASE
LD
PD
1000 MIN.
6.7
fl0.9
4
32
2
1
34
2
2-C1.5
2-fl2.5–0.2
7.4–0.2
4-fl0.45–0.1
fl6.0 MAX.
PCD 2.54
7.4–0.2
3.7–0.2
1.0–0.2
12.7–0.15
17.0–0.2
12 MIN. 31 MAX.
CASE
LD
PD
1000 MIN.
4–0.2
45¡
1
“KM” PACKAGE
“LK” PACKAGE
UNIT: mm
UNIT: mm
1,310nm MQW-FP
Coaxial Laser
FLD3C5KM/LK-B
7
1,310nm MQW-FP
Coaxial Laser FLD3C5KM/LK-B
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
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Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0302M200
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division
11th Floor, Hachioji Daiichi-Seimei Bldg.
3-20-6 Myojin-cho
Hachioji-city, Tokyo 192-0046, Japan
TEL: +81-426-43-5885
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