BCV27 NPN Darlington Transistor Description C This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from process 05. E SOT-23 Mark: FF B Ordering Information Part Number Marking Package Packing Method BCV27 FF SOT-23 3L Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 10 V Collector Current - Continuous 1.2 A -55 to +150 C IC TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. (c) 1997 Fairchild Semiconductor Corporation BCV27 Rev. 1.1.0 www.fairchildsemi.com BCV27 -- NPN Darlington Transistor October 2014 Values are at TA = 25C unless otherwise noted. Symbol PD RJA Parameter Max. Unit 350 mW Derate Above 25C 2.8 mW/C Thermal Resistance, Junction-to-Ambient 357 C/W Total Device Dissipation Note: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 40 V V(BR)EBO 10 Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 0.1 A V IEBO Emitter Cut-Off Current VEB = 10 V, IC = 0 0.1 A IC = 1.0 mA, VCE = 5.0 V 4000 hFE DC Current Gain IC = 10 mA, VCE = 5.0 V 10000 IC = 100 mA, VCE = 5.0 V 20000 VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1.5 V fT Current Gain - Bandwidth Product IC = 30 mA, VCE = 5.0 V, f = 100 MHz 220 MHz Cc Collector Capacitance VCB = 30 V, IE = 0, f = 1.0 MHz 3.5 pF (c) 1997 Fairchild Semiconductor Corporation BCV27 Rev. 1.1.0 www.fairchildsemi.com 2 BCV27 -- NPN Darlington Transistor Thermal Characteristics(3) VCESAT - COLLECTOR EMITTE R VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN (K) 250 VCE = 5V 200 125 C 150 25 C 100 - 40 C 50 0 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 - 40 C 25 C 1.2 125 C 0.8 0.4 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 25C 125 C 0.4 0 1000 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 2 - 40 C 1.6 25 C 1.2 125 C 0.8 VCE = 5V 0.4 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 1000 Figure 4. Base Emitter On Voltage vs. Collector Current Figure 3. Base-Emitter Saturation Voltage vs. Collector Current 100 BVCER - BREAKDOWN VOLTAGE (V) I CBO - COLLE CTOR CURRENT (nA) - 40 C 0.8 V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTE R VOLTAGE (V) = 1000 1.6 = 1000 1.2 Figure 2. Collector-Emitter Saturation Voltage vs. Collector Current Figure 1. Typical Pulsed Current Gain vs. Collector Current 2 1.6 62.5 VCB = 30V 10 62 61.5 1 61 60.5 0.1 0.01 25 50 75 100 T A - AMBIE NT TEMP ERATURE ( C) 59.5 0.1 125 Figure 5. Collector Cut-Off Current vs. Ambient Temperature (c) 1997 Fairchild Semiconductor Corporation BCV27 Rev. 1.1.0 60 1 10 100 1000 RESISTANCE (k ) Figure 6. Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base www.fairchildsemi.com 3 BCV27 -- NPN Darlington Transistor Typical Performance Characteristics f T - GAIN BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) f = 1.0 MHz 20 10 Cib 5 Cob 2 0.1 1 V 10 100 - COLLECTOR VOLTAGE(V) 500 V ce = 5V 400 300 200 100 0 1 10 20 50 100 150 IC - COLLECTOR CURRENT (mA) Figure 8. Gain Bandwidth Product vs. Collector Current Figure 7. Input and Output Capacitance vs. Reverser Voltage P D - POWER DISSIPATION (mW) 350 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Figure 9. Power Dissipation vs. Ambient Temperature (c) 1997 Fairchild Semiconductor Corporation BCV27 Rev. 1.1.0 www.fairchildsemi.com 4 BCV27 -- NPN Darlington Transistor Typical Performance Characteristics (Continued) 0.95 2.920.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.400.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 0.25 0.20 MIN (0.55) SCALE: 2X SEATING PLANE A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I75 (c) Fairchild Semiconductor Corporation www.fairchildsemi.com