Siliconix DG183/184/185 A Member of the TEMIC Group High-Speed Drivers with Dual DPST JFET Switches Features Benefits Applications Constant On-Resistance Over Entire @ Low Distortion @ Audio Switching Analog Range @ Eliminates Large Signal Errors Precision Switching @ Low Leakage High Precision Video Switching @ Low Crosstalk Improved Channel Isolation @ Video Routing e Break-Before-Make Switching Eliminates Inadvertent i @ Sample/Hold @ Rad Hardness e@ Aerospace Description The DG183/184/185 are precision d , video switching, and single-throw (DPST) analog switches des. accurate switching of video and audio si; ideally suited for applicati on-resistance over the,gatire eve fast and accurate switch performance, each levice comprises four n-channel JFET transistors and a om resistance TTL compatible bipolar driver. In the on state, each switch G18575 2). Reduced conducts current equally well in either direction. In the off 1 low leakage current (Ipjon) condition, the switches will block up to 20 V peak-to-peak, ich benefit from the flat JF PET with feedthrough of less than 60 dB at 10 MHz. The major differen (DG18310 Q, DG errors are achieved < 2 nA). Applications Functional Block Diagram and Pin Configuration Dual-In-Line Flat Package YL So 14 Ss p15) D4 13 D3 b<pyis| I Do 12 Di 4 ul v- S 11 S Lp Ve IN2 10 INy 13 V+ 9 v- B Be =" V+ | ia} Top View t~<ty10} LL L.~__| 9 Sz Refer to JAN38510 Information, Military Section *Common to Substrate and Case Top View Ordering Information DC183/184/185 Truth Table DGI83BP Logic ce Switch 25 to 85C 16-Pin Sidebraze 0 OFF 1 ON Logic 0 < 08V Logic 1 = 2.0V Switches Shown for Logic 1 Input 16-Pin Sidebraze 55 to 125C 14-Pin Flat Pack P-32167Rev. B (11/15/93) 1-11DG183/184/185 Siliconix Absolute Maximum Ratings Current (S or D) DG183 2.0.0... cece cece eee eeees 200 mA Current (S or D) DG184, DG185 1.0.20... cee eee eee 30mA Current (All Other Pins) 30 mA Storage Temperature .........--- 0 0c e eee eee eee -65 to 150C Power Dissipation 16-Pin Sidebraze? 0.0... 0... c ee ete erect ete eee 900 mw 14-Pin Flat Pack . 2.0.0. eee ee eees 900 mw Notes: a. All leads welded or soldered to PC Board. b. Derate 12 mW/C above 75C c. Derate 10 mW/C above 75C Specifications for DG183 Test Conditions A Suffix B Suffix Unless Otherwise Specified 55 to 125C 25 to 85C Vt = 15V,V- = -15V,VL=5V Parameter Symbol Vr =0V, Vin = 0.8 Vor2 VE Temp> | Typ | Min | Max? | Min | Max? | Unit Analog Signal Range VANALOG Drain-Source Room 1S 10 15 On-Resistance "DS(on) Is = 10mA, Vp = 75V Full 20 25 Vs=210V,Vp= F10V Room | 0.05 10 15 Source Off V+ =10V,V- = -20V Hot 1000 300 Ts(oft Leakage Current Soff) Room 0.05 10 15 Vs = 75V, Vp = F75V Mae 1000 300 Vs = +10V, Vp = F10V Room 0.04 10 15 Drain Off : V+ =10V,V- = 20V Hot 1000 300 | nA Leakage Current Dioff) ag Vs=475V,Vp=F75V | Room | 008 1000 ss Channel On _Vv.- Room -0.1 2 ~10 Leakage Current TD(on) Vp = Vs = 75V Hot -200 -200 Saturation Drain Current Ipss 2 ms Pulse Duration Room 300 mA Input Current with Room | <0.01 10 10 Input Voltage High INH Vin =5V Hot 20 20 7 pA Input Current with _ Input Voltage Low Int Vin =0V Full ~30 | ~250 250 Turn-On Time ton Se. Time Test C Saitch t Ciroui Turn-Off Time toll g time West Creu Room | 140 200 20 +) Source-Off Capacitance Cs(ott) Vs =-5V,Ipn=0 Room 21 Drain-Off Capacitance Croft) f= 1 MHz Vp = -5V Is =0 Room 17 pF Channel-On Capacitance Cpyon) Vp = Vs =0V Room 17 Off Isolation f= 1 MHz, Ry = 75Q Room >55 dB Positive Supply Current I+ Negative Supply Current I- V oVorsV Logic Supply Current IL ween or Room 3.1 4 mA Reference Supply Current IR Room -1 -2 -2 1-12 P-32167Rev. B (11/15/93)Siliconix AMember of the TEMIC Group Specifications for DG184 DG183/184/185 Parameter Symbol Test Conditions Unless Otherwise Specified V+ =15V,V- = -15V,VL=5V Vr = OV, Vin = 08Vor2VE Temp A Suffix B Suffix 55 to 125C 25 to 85C Min@ | Max@ | Min? Max! | Unit Analog Signal Range VANALOG Drain-Source _ Room 22 30 50 On-Resistance "Ds(on) Is = 10 mA, Vp = -7.5V Full 60 6 Vs = +10V, Vp = F10V Room 0.06 1 5 Source Off V+ =10V,V- =-20V Hot 100 100 I Leakage Current S(off) Room 0.05 1 5 Vs = 75V, Vp = F75V Mor 100 100 Vs = +10V, Vp = F10V Room 0.4 1 5 nA Drain Off V+ =10V, V- = -20V Hot 100 100 Ip Leakage Current (off) Room 03 1 5 Vs = 75V, Vp = F75V Mot 100 100 Channel On _w.ie Room | 0,02 2 -10 Leakage Current ic) Vp = Vs = 7.5V Hot 200 200 Input Current with Input Voltage High Input Current with Input Voltage Low Tint Vin = OV Full -250 250 Turn-On Time ton 85 150 180 See Switching Time Test Circuit ns Turn-Off Time loft Room 95 130 150 Source-Off Capacitance Cgoft) Vs = -SV,Ip =0 Room 9 Drain-Off Capacitance Crotty f= 1MHz Vp = ~5V Is =0 Room 6 pF Channel-On Capacitance Cron) Vp = Vs =0V Room 14 Off Isolation OIRR f = 1 MHz, Ry, = 752 Peer Suppl oO ad Positive Supply Current I+ Negative Su; Current I- 6 ely Vn = OV, or 5 V Logic Supply Current IL Reference Supply Current Ig P-32167Rev. B (11/1593) 1-13DG183/184/185 Specifications? for DG185 Siliconix A Member of the TEMIC Group Test Conditions A Suffix B Suffix Unless Otherwise Specified 55 to 125C 25 to 85C V+ =15V,V- =-15V,VL=5V Parameter Symbol Vp = OV, Vin = 08 Vor2Vi Temp | Typ | Min? | Max? | Min? | Max? | Unit Analog Switch . Analog Signal Range VANALOG Full -10 15 -10 15 Vv Drain-Source _ _ Room 35 75 100 On-Resistance "DS(on) Is = 10 mA, Vp = ~7.5V Full 150 150 Vs = 10 V, Vp = F10V Room 0.05 1 5 V+ =10V,V- = ~20V Hot 100 100 Source Off [scott Leakage Current Room 0.07 1 5 Vs = +10V, Vp = F10V Hot 100 100 Vs = +10V, Vp = 10V Room 0.4 1 5 nA : V+ =10V,V- = -20V Hot 100 100 Drain Off Tei Leakage Current o Room 03 1 5 Vs = 10 V, Vp = F10V Hot 100 100 Channel On _VUe = Room | 0.03 -2 -10 Leakage Current Ip(on) Vp = Vs = +10V Hot 200 -200 Digital-Input Input Current with I Vin =5V Room | <0.01 10 10 Input Voltage High INH IN Hot 20 20 WA Input Current with _ _ _ _ Input Voltage Low INL Vin = 0V Full 30 250 250 Dynamic Characteristics Turn-On Time ton . . Room 120 250 300 See Switching Time Test Circuit ns Turn-Off Time tote Room 100 130 150 Source-Off Capacitance Cscoft) Vs = -5V,Ip =0 Room 9 Drain-Off Capacitance Cpyotty f = 1 MHz Vp = -5 Vi Is = 0 Room 6 pF Channel-On Capacitance Cpyon) Vp =Vs=0V Room 14 Off Isolation OIRR f= 1 MHz, Ry = 75Q Room >50 dB Power Supplies s Positive Supply Current I+ Room 0.6 3 3 Negative Supply Current I- Room -2.7 ~5.5 -5.5 Vin = OV, or5V mA Logic Supply Current I Room 3.1 4.5 45 Reference Supply Current Ir Room -1 -2 -2 Notes: Room = 25C, Full = as determined by the operating temperature suffix. Refer to PROCESS OPTION FLOWCHART (Section 5 of the 1994 Data Book or FaxBack number 7103). The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. Guaranteed by design, not subject to production test. Vin = input voltage to perform proper function. 1-14 a. b. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d e. P-32167-Rev. B (11/15/93)Siliconix A Member of the TEMIC Group Typical Characteristics Supply Current vs. Temperature 5 4 x 3 2 2 i 2 4 4 1 0 -55 -35 -15 5 25 45 65 85 105 125 Temperature (C) ps(on) YS. Temperature DG185 a g a & a E Z -50 -25 9 0 25 S0 75 100 125 Temperature (C) Leakage vs. Temperature (DG183) V+=10V V- =-20V VL=5V VrR=0 g E 25 45 65 85 105 125 Temperature (C) P.32167Rev. B (11/15/93) DG183/184/185 Igy vs. Vypy and Temperature 100 Vint = 0 Vinn = 5 V 80 60 40 20 IinH 0 ~55 -35 -15 5 25 45 65 85 105 125 Temperature (C) Switching Time vs. Vp and Temperature (DG183) 230 oe VD =H 75 V 210 | We Vp =-75V 190 170 150 130 110 90 -55 -35 -15 25 45 65 85 105 125 Temperature (C) Switching Time vs. Vp and Temperature (DG184/185) 130 120 L. = Vp =7.5V ito Lo Y= -75V 100 90 80 70 60 50 -55 -35 -15 5 25 45 65 85 105 125 Temperature (C) 1-15DG183/184/185 Typical Characteristics (Cont'd) Ipcorr VS. Temperature (DG184/185) Ip (nA) Cs,p (pF) 100 V+ =10V, V- = -20V Vp = -10V, Vs = 10V 10 1 0.1 25 45 65 85 105 125 Temperature (C) Capacitance vs. Vp or Vs (DG184/185) 20 18 Vint = 0.8 V Vino =2V 16 f= 1MHz 14 12 10 8 6 Cott) 4 Capacitance is measured from test terminal 2 T tocommon. 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 Vp or Vs Drain or Source Voltage (V) Schematic Diagram (Typical Channel) 1-16 Cs,p (pF) ISO (dB) 105 i ix A Member of the TEMIC Group Capacitance vs. Vp or Vs (DG183) f=1MHz -8 -4 0 4 8 Vp or Vs Drain or Source Voltage (V) Off Isolation vs. Frequency DG184/185 V+ =15V,V- = -15V Vp =0, VL =5V RL = 752 Vin 2 220mVepms 106 107 108 f Frequency (Hz) VVV Vi Ov+ im =| a s > IN _ a It It We I fF < < 3 ") < i VRP | vV- Figure 1. P-32167Revy. B (11/15/93)Siliconix AMember of the TEMIC Group Test Circuits Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform. Logic Input Switch Output +5V +15V VL V+ ton: vs =3 ay torr: Vs =~ Ss Vsi1 o4=! ofa21 T Vou | S. D: Vex O_o | IN > J Cu GND v- te os _ -15V S_- = Cy (includes fixture and stray capacitance) Ry Vour = Vs x Ry fpsony Figure 2. Switching Time Application Hints? DG183/184/185 t <10 ns 90% Switch -7.5 1015 DG183 on, DG184 GND 2.0/0.8 12.5 to 10 GND 2.0/0.8 4.5 to 12 GND 2.0/0.8 10 to 15 DG185 10 GND 2.0/0.8 15 to 10 12 GND 2.0/0.8 -7to12 Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. b. Elecirical Parameter Chart based on V+ = 15 V, Vy = 5 V, Vr = GND. P-32167Rev. B (11/15/93) 1-17