(3 k )(1 0 0) E 2SB1259 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081) A hFE mA -120min VCE=-4V, IC=-5A 2000min V IB -1 A VCE(sat) IC=-5A, IB=-10mA -1.5max PC 30(Tc=25C) W VBE(sat) IC=-5A, IB=-10mA -2.0max V Tj 150 C fT VCE=-12V, IE=0.2A 100typ MHz -55 to +150 C COB VCB=-10V, f=1MHz 145typ pF Tstg 3.9 V 1.350.15 1.350.15 RL () IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (s) tstg (s) tf (s) -30 10 -3 -10 5 -6 6 0.6typ 1.6typ 0.5typ I B =-1mA -5 0 0 -1 -2 -3 -4 -5 -2 I C =-10A -5A -1 -2 0 -0.2 -6 -1 -10 -100 D C Cur r ent Gai n h F E 5000 1000 500 100 5000 12 1000 5C C 25 500 -3 0C 100 50 -1 -5 20 -0.02 -10 -0.1 Collector Current I C (A) -0.5 -1 -5 -10 1 0.5 0.3 Safe Operating Area (Single Pulse) at si 10 nk 10 he 5 ite 1 150x150x2 100x100x2 50x50x2 Without Heatsink -0.05 0.5 fin -0.1 In Without Heatsink Natural Cooling ith -0.5 20 W M aximu m Power Dissipat io n P C (W) s Co lle ctor Cu rren t I C (A) 0 s -1 -0.03 -3 1000 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 10 m DC s 10 -5 100 1m Typ 100 30 -10 Emitter Current I E (A) 10 P c - T a Derating -20 0.1 1 Time t(ms) (V C E =-12V) 200 -2 -2.2 5 Collector Current I C (A) f T - I E Characteristics (Typical) Cut- off F req uency f T (MH Z ) D C Cur r ent Gai n h F E (V C E =-4V) 20000 10000 Typ 0 0.05 -1 j-a - t Characteristics h FE - I C Temperature Characteristics (Typical) 20000 -0.5 0 Base-Emittor Voltage V B E (V) (V C E =-4V) -0.1 0 -1000 Base Current I B (mA) h FE - I C Characteristics (Typical) 50 -0.03 -4 -1A Collector-Emitter Voltage V C E (V) 10000 -6 ) -2mA -8 Temp A (V C E =-4V) (Case -10 -10 125C A -3m -3 Collector Current I C (A) A -5m I C - V BE Temperature Characteristics (Typical) j - a (C /W) - m 10 B C E Transient Thermal Resistance A Weight : Approx 2.0g a. Part No. b. Lot No. V CE ( sat ) - I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m Collector Current I C (A) -5 -2 0m 2.40.2 2.20.2 VCC (V) -15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 Typical Switching Characteristics (Common Emitter) I C - V CE Characteristics (Typical) o3.30.2 a b ) -10(Pulse-15) IC -10max VEB=-6V IC=-10mA Temp V(BR)CEO 4.20.2 2.8 c0.5 (Case IEBO V 10.10.2 -30C V -6 A 4.00.2 -120 VEBO -10max 0.80.2 VCEO VCB=-120V 0.2 ICBO Unit mp) V Ratings e Te -120 External Dimensions FM20(TO220F) (Ta=25C) Conditions (Cas VCBO Symbol 25C Unit 8.40.2 Electrical Characteristics (Ta=25C) Ratings Symbol C Application : Driver for Solenoid, Relay and Motor and General Purpose 16.90.3 Absolute maximum ratings B Equivalent circuit 13.0min Darlington 2 -5 -10 -50 -100 Collector-Emitter Voltage V C E (V) -200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 41