41
ø3.3±0.2
10.1±0.2
4.0±0.2
16.9±0.3
13.0min
8.4±0.2
0.8±0.2
3.9
±0.2
2.542.54
1.35±0.15
0.85
+0.2
-0.1
1.35±0.15
2.2±0.2
4.2±0.2
2.8 c0.5
2.4±0.2
0.45
+0.2
-0.1
BEC
a
b
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Ratings
–120
–120
–6
–10(Pulse–15)
–1
30(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
■
Absolute maximum ratings
■
Electrical Characteristics
Symbol
ICBO
IEBO
V(BR)CEO
hFE
VCE(sat)
VBE(sat)
fT
COB
Ratings
–10max
–10max
–120min
2000min
–1.5max
–2.0max
100typ
145typ
Unit
µ
A
mA
V
V
V
MHz
pF
Conditions
VCB=–120V
VEB=–6V
IC=–10mA
VCE=–4V, IC=–5A
IC=–5A, IB=–10mA
IC=–5A, IB=–10mA
VCE=–12V, IE=0.2A
VCB=–10V, f=1MHz
Darlington 2SB1259
(Ta=25°C) (Ta=25°C)
External Dimensions FM20(TO220F)
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2081)
Application : Driver for Solenoid, Relay and Motor and General Purpose
Weight : Approx 2.0g
a. Part No.
b. Lot No.
IC–VCE Characteristics
(Typical)
hFE–IC Characteristics
(Typical)
hFE–IC
Temperature Characteristics (Typical)
θj-a–t Characteristics
IC–VBE Temperature Characteristics
(Typical)
VCE(sat)–IB Characteristics
(Typical)
Pc–Ta Derating
0
0
–5
–10
–15
–2–1 –6–5–4–3
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
–50mA
–10mA
–5mA
–3mA
–2mA
I
B
=–1mA
–20mA
Safe Operating Area (Single Pulse)
fT–IE Characteristics
(Typical)
0
–3
–2
–1
–0.2
–1 –1000–10 –100
Base Current IB(mA)
Collector-Emitter Saturation Voltage VCE(sat)(V)
–1A
–5A
IC=–10A
–0.03 –0.1 –0.5 –1 –10–5
Collector Current IC(A)
DC Current Gain hFE
(VCE=–4V)
50
100
500
10000
5000
1000
20000
Typ
0.3
0.5
5
1
1 10 100 1000
Time t(ms)
Transient Thermal Resistance θj-a(˚C/W)
–10 –50–5–3 –100 –200
–0.03
–0.05
–1
–0.5
–0.1
–10
–20
–5
Collector-Emitter Voltage VCE(V)
Collector Current IC(A)
DC
100µs
10ms
1ms
Without Heatsink
Natural Cooling
30
20
10
2
00 25 50 75 100 125 150
Ambient Temperature Ta(˚C)
Maximum Power Dissipation PC(W)
50x50x2
100x100x2
150x150x2
With Infinite heatsink
Without Heatsink
0
–10
–4
–6
–8
–2
0 –2.2–2–1
Base-Emittor Voltage VBE(V)
Collector Current IC(A)
(VCE=–4V)
125˚C (Case Temp)
25˚C (Case Temp)
–30˚C (Case Temp)
(VCE=–4V)
–0.02 –0.1 –0.5 –10–5–1
20
100
50
5000
500
1000
20000
10000
Collector Current IC(A)
DC Current Gain hFE
25˚C
–30˚C
125˚C
0.05 0.1 0.5 1 5 10
100
0
200
Cut-off Frequency fT(MHZ)
(VCE=–12V)
Emitter Current IE(A)
Typ
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
–30
RL
(Ω)
10
IC
(A)
–3
VBB2
(V)
5
IB2
(mA)
6
ton
(
µ
s)
0.6typ
tstg
(
µ
s)
1.6typ
tf
(
µ
s)
0.5typ
IB1
(mA)
–6
VBB1
(V)
–10
B
C
E
(3kΩ)(100Ω)
Equivalent circuit
