SMD Schottky Barrier Diodes CDBV1100-HF Forward current: 1.0 A Reverse voltage: 100V RoHS Device Halogen Free SOD-323 0.071(1.80) 0.063(1.60) Features 0.012(0.30) Typ. - Low leakage current. 0.055(1.40) 0.047(1.20) 0.108(2.75) 0.100(2.55) - Easy pick and place. - Plastic package has Underwriters Lab. Flammability Classification 94V-0 0.004(0.10) Typ. 0.035(0.90) Max. - Exceeds environmental standard MIL-S-19500/228. 0.004(0.10) 0.001(0.02) Mechanical Data 0.017(0.42) 0.009(0.22) - Case: SOD-323, molded plastic. Dimensions in inches and (millimeter) - Terminals: Solderable per MIL-STD-750, method 2026. Circuit Diagram - Polarity: Indicated by cathode end. Maximum Ratings (at TA=25C unless otherwise noted) Symbol Value Unit 100 V VR(RMS) 70 V IO 1 A Non-repetitive peak forward surge current @ t=8.3ms IFSM 9 A Power dissipation PD 250 mW RJA 400 C/W Junction temperature range TJ -55 ~ +150 C Storage temperature range TSTG -55 ~ +150 C Parameter Peak repetitive reverse voltage VRRM Working peak reverse voltage VRWM RMS reverse voltage Average rectified output current Thermal resistance from junction to ambient Electrical Characteristics (at TA=25C unless otherwise noted) Conditions Parameter Reverse current VR = 100V , TJ=25C Symbol IR IF = 0.1A Min. Typ. Max. Unit 0.2 50 A 0.52 Forward voltage (Note 1) VF V 0.82 IF = 1A Total capacitance f = 1MHz , VR = 4V Ctot 25 pF Notes: (1) Pulse test : tp300s ; 0.02 Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 1 QW-JB067 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes RATING AND CHARACTERISTIC CURVES (CDBV1100-HF) Fig.1 - Power Derating Curve Fig.2 - Typical Forward Characteristics 1000 Instantaneous Forward Current, (mA) 300 Power Dissipation, (mW) 250 200 150 100 50 0 TJ=150C TJ=125C 100 TJ=100C TJ=75C 10 TJ=50C TJ=25C 1 0 0 25 50 75 100 0 125 Ambient Temperature, (C) 0.3 0.4 0.5 0.6 0.7 0.8 Fig.4 - Typical Capacitance or Diodes 1000.00 TJ=150C TJ=125C 10.00 TJ=100C 1.00 TJ=75C TJ=50C 0.10 TJ=25C 0.01 Caoacutance of Diode, (pF) 80 100.00 Reverse Current, (A) 0.2 Forward Voltage, (V) Fig.3 - Typical Reverse Characteristics 0 0 0.1 70 60 50 40 30 20 10 0 20 40 60 80 100 Reverse Voltage, (V) 0 10 20 30 40 Reverse Voltage, (V) Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 2 QW-JB067 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes Reel Taping Specification 12 o 0 D2 D1 D W1 SOD-323 SOD-323 SYMBOL A B C d D D1 D2 (mm) 1.46 0.05 3.30 0.05 1.25 0.05 1.50 + 0.10 178.00 1.00 54.40 1.00 13.00 0.50 (inch) 0.057 0.002 0.130 0.002 0.049 0.002 0.059 + 0.004 7.008 0.039 2.142 0.039 0.512 0.020 SYMBOL E F P P0 P1 W W1 12.30 1.00 0.484 0.039 (mm) 1.75 0.10 3.50 0.05 4.00 0.10 4.00 0.10 2.00 0.05 8.00 + 0.30 - 0.10 (inch) 0.069 0.004 0.138 0.002 0.158 0.004 0.158 0.004 0.079 0.002 0.315 + 0.012 - 0.004 Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 3 QW-JB067 Comchip Technology CO., LTD. SMD Schottky Barrier Diodes Marking Code Part Number Marking Code CDBV1100-HF 10 XX XX = Product type marking code = The marking bar indicates the cathode. Suggested PAD Layout SOD-323 B SIZE (mm) (inch) A 1.60 0.063 B 0.63 0.024 C 0.83 0.033 A D 2.86 0.112 D C Note: 1.The pad layout is for reference purposes only. Standard Packaging REEL PACK Case Type SOD-323 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV: B Page 4 QW-JB067 Comchip Technology CO., LTD.