© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ500 V
VGSM Transient ± 40 V
VGSM Continuous ± 30 V
ID25 TC= 25°C45A
IDM TC= 25°C, pulse width limited by TJM 200 A
IAR TC= 25°C80A
EAR TC= 25°C80mJ
EAS TC= 25°C 3.5 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 20 V/ns
TJ≤ 150°C, RG = 2 Ω
PDTC= 25°C 360 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
FCMounting force 20..120/4.5..25 N/lb
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
Weight 5g
DS99438E(03/06)
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 500 µA 500 V
VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V
IGSS VGS = ± 30 VDC, VDS = 0 ± 200 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 40 A 72 mΩ
PolarHVTM HiPerFET
Power MOSFET
ISOPLUS247TM
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFR 80N50P VDSS = 500 V
ID25 = 45 A
RDS(on) ≤≤
≤≤
≤ 72 mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 200 ns
G = Gate D = Drain
S = Source
(Isolated Tab)
GDS
ISOPLUS247 (IXFR)
E153432
Features
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lLow drain to tab capacitance(<30pF)
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lRated for Unclamped Inductive Load
Switching (UIS)
lFast intrinsic Rectifier
Applications
lDC-DC converters
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lAC motor control
Advantages
lEasy assembly
lSpace savings
lHigh power density
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 80N50P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs VDS= 20 V; ID = 40 A, ID25, Note 1 45 70 S
Ciss 12.7 nF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 pF
Crss 120 pF
td(on) 25 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 40 A 27 ns
td(off) RG = 1 Ω (External) 70 ns
tf16 ns
Qg(on) 197 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 40 A 70 nC
Qgd 64 nC
RthJC 0.35°C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C unless otherwise specified
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 80 A
ISM Repetitive 200 A
VSD IF = IS, VGS = 0 V, 1.5 V
trr IF = 25 A, -di/dt = 100 A/µs 200 ns
QRM VR = 100 V, VGS = 0 V 0.6 µC
IRM 6A
Notes:
1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
ISOPLUS247TM Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2006 IXYS All rights reserved
IXFR 80N50P
Fig. 2. Extended Output Characte ristics
@ 25
°
C
0
20
40
60
80
100
120
140
160
180
0 3 6 9 12 15 18 21 24 27
VD S - Volts
I D - Amperes
V
GS
= 10V
8V
5V
6V
7V
Fig. 3. Output Characte ris tics
@ 125
°
C
0
10
20
30
40
50
60
70
80
02468101214
VD S - Volts
I D - Amperes
V
GS
= 10V
7V
6V
5V
Fig. 1. Output Characteristics
@ 25
°
C
0
10
20
30
40
50
60
70
80
012 3456
VD S - Volts
I D - Amperes
V
GS =
10V
8V
5V
6V
7V
Fig. 4. RDS(on
)
Nor m aliz e d to I
D
= 40 A
Value vs. Junction Tem perature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
3.4
-50 -25 0 25 50 75 100 125 150
TJ
- Degrees Centigrade
R D S ( o n ) - Normalized
I
D
= 80A
I
D
= 40A
V
GS
= 10V
Fig. 5. RDS(on) Norm alize d to
I
D
= 40 A Value vs . ID
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
3.2
0 20 40 60 80 100 120 140 160 180
I D - Amperes
R D S ( o n ) - Normalized
T
J
= 125
°
C
T
J
= 25
°
C
V
GS
= 10V
Fig. 6. Drain Current vs . Case
Tem perature
0
5
10
15
20
25
30
35
40
45
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
I D - Amperes
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR 80N50P
Fig. 11. Capacitance
10
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - PicoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180 200
Q
G
- NanoCoulombs
V
G S
- Volts
V
DS
= 250V
I
D
= 40A
I
G
= 10m A
Fig. 7. Input Adm ittance
0
20
40
60
80
100
120
140
44.555.5 66.577.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125
°
C
25
°
C
-40
°
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 20406080100120140
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
°
C
25
°
C
125
°
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
0.4 0.6 0.8 1 1.2 1.4 1.6
V
S D
- Volts
I
S
- Amperes
T
J
= 125
°
C
T
J
= 25
°
C
Fig. 12. Forw ard-Bias
Safe Operating Area
1
10
100
1000
10 100 1000
VD S - Volts
I D - Amperes
100µs
1ms
DC
TJ = 150°C
TC = 25°C
RDS(on) Limit
10ms
25µs
© 2006 IXYS All rights reserved
IXFR 80N50P
Fig. 13. Maxim um Transient Therm al Resis tance
0.00
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R ( t h ) J C - ºC / W
