NEC NPN SILICON POWER TRANSISTOR ism. 2SC2682 DESCRIPTION The 25027682 & designed for use in Audio frequency power amplifier. PACKAGE DIMENSIONS in prellieneters (ieichirn! 5.8 MAX a MAE. FEATURES High voltage, Voceg > 1H0 es jo JW MAX) (0110 AAR * Low C,,,. High fy = wT Gated Lbs) fy = 200 MHz, C,, = 3.2 pF ay is Complomentary to the NEC 2541142 PNP Transistor. qt a3 cf s als it re ABSOLUTE MAXIMUM RATINGS 4) Maximum Temporatunes : | per) og z= Storage Temperatura. .....2..... . 55 to +150C | #8 32 Junction Temperatura oc. e+e +++ 160C Maximum Tae Maximum Power Dissipations iS Total Power Dissipation iTg = 25 a | ne ate ee jon 4 Total Power Dissipation (T.=25 C) ...-... 10 W faooaty| | i =35" 2.4/2.4 Maximum Voltages and Currant (Tg = 25 C) euoen ei coen Vepo Collector to Base Voliage - . . ao) OW Veeo Callector to Emitter Voltage... ... lao (OW foo] Vena Emitter to Basm Voltage ,......-- 5.0 WV Ve: Collector Curent... eee eee 100 mA 1. Erittie 2. Collector connected to mounting place 3. few ELECTRICAL CHARACTERISTICS (T, = 25 C) SYMBOL CHARACTERISTIC haord TP MAM LinIT TEST CONDITIONS pet OG Current Gain a 190) = Voce = 50, le 1.oma* hpep Oc Current Gain 109 700 a = Wee = 50 , ic = 10m4" IF Gain Ganchyidth Product 700 MH Viog = 10. Ie = mA tab Qutpet Capacitance a2 Bo pF Vog= 10, lp = 0,1= 1.0 MHz J Vee = 10, le = 1.0 mA, NE Aboiee Figure 4.0 da Fig = 1D kit, t= 1.0 kHz leao Collector Cutoff Current 10 uA Wop? 180 Vig = oO leao Envitter Cuba! Cunnens 1.0 uty Veer d.0,ic=o VeeEtunrh Collector Saturation Velmge O02 0.5 v Ic = S0.mA, Ig = 0 mA* V ae Leet | Bast Saturation Voltage a8 1.5 Ip 2 8O mA tg &.0 ma* "Bulan Test > i! = 250 ps, Dury Cycle & 2% Qashficaton of pe ft 160 to 30 Aank Flange a HOO to 20 Tew Conditions Veep" 6.04, le = oma