74HC138
http://onsemi.com
3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
Vin DC Input Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
Vout DC Output Voltage (Referenced to GND) – 0.5 to VCC + 0.5 V
Iin DC Input Current, per Pin ±20 mA
Iout DC Output Current, per Pin ±25 mA
ICC DC Supply Current, VCC and GND Pins ±50 mA
PDPower Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
Tstg Storage Temperature – 65 to + 150 _C
TLLead Temperature, 1 mm from Case for 10 Seconds
(SOIC or TSSOP Package) 260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
†Derating −SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 .W/_C from 65_ to 125_C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
VCC DC Supply Voltage (Referenced to GND) 2.0 6.0 V
Vin, Vout DC Input Voltage, Output Voltage (Referenced to GND) 0 VCC V
TAOperating Temperature, All Package Types – 55 + 125 _C
tr, tfInput Rise and Fall Time VCC = 2.0 V
(Figure 2) VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.