
Collector-Emitter voltage : VCE [V]
10
Capacitance : Cies, Coes, Cres [nF]
Capacitance vs. Collector-Emitter voltage
Tj=25°C
0 5 10 15 20 25 30 35
100
IGBT Module
Switching time vs. RG
Vcc=600V, Ic=15A, VGE=±15V, Tj=25°C
Dynamic input characteristics
Tj=25°C
Gate resistance : RG [ohm]
Gate charge : Qg [nC]
100
1000
Switching time : ton, tr, toff, tf [n sec.]
Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
35
30
25
20
15
10
5
0 0 200 400 600 800 1000 1200
Collector-Emitter voltage : VCE [V]
Collector current : Ic [A]
0 50 100 150 200
25
20
15
10
5
0
1000
800
600
400
200
0
Switching time vs. RG
Vcc=600V, Ic=15A, VGE=±15V, Tj=125°C
Gate resistance : RG [ohm]
100
1000
100
Switching time : ton, tr, toff, tf [n sec.]
Reversed biased safe operating area
+VGE=15V, -VGE = 15V, Tj = 125°C, RG = 120 ohm
<<> Typical short circuit capability
Vcc=800V, RG=120 ohm, Tj=125°C
Short circuit time : tsc [µs]
1000
500
400
300
200
100
0 5 10 15 20 25
50
40
30
20
10
0
Short circuit time current : Isc [A]
Characteristics
1MBH15-120,1MBH15D-120
1MBH15-120, 1MBH15D-120
Gate voltage : VGE [V]
100
10000