© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11 1Publication Order Number:
MJE340/D
MJE340
Plastic Medium−Power
NPN Silicon Transistor
This device is useful for high−voltage general purpose applications.
Features
•Suitable for Transformerless, Line−Operated Equipment
•Thermopad Construction Provides High Power Dissipation Rating
for High Reliability
•Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
300
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎ
ÎÎÎÎ
3.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current − Continuous
ÎÎÎÎ
IC
ÎÎÎÎ
500
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
20
0.16
ÎÎÎ
Î
Î
Î
ÎÎÎ
W
mW/_C
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
_C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎÎ
ÎÎÎÎ
qJC
ÎÎÎÎ
ÎÎÎÎ
6.25
ÎÎÎ
ÎÎÎ
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless ot herwise noted)
Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
ÎÎÎÎ
ÎÎÎÎ
VCEO(sus)
ÎÎ
ÎÎ
300
ÎÎÎ
ÎÎÎ
−
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 300 Vdc, IE = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICBO
ÎÎ
ÎÎ
ÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
100
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
IEBO
ÎÎ
ÎÎ
−
ÎÎÎ
ÎÎÎ
100
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
hFE
ÎÎ
ÎÎ
ÎÎ
30
ÎÎÎ
Î
Î
Î
ÎÎÎ
240
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MJE340 TO−225 500 Units/Box
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
300 VOLTS, 20 WATTS
http://onsemi.com
MJE340G TO−225
(Pb−Free) 500 Units/Box
TO−225
CASE 77
STYLE 1
21
3
MARKING DIAGRAM
YWW
JE340G
Y = Year
WW = Work Week
JE340 = Device Code
G = Pb−Free Package
MJE340
http://onsemi.com
2
28
0
TC, CASE TEMPERATURE (°C)
020 40 80 120 160
20
12
PD, POWER DISSIPATION (WATTS)
MJE340
32
24
16
8.0
4.0
1.0
10
IC, COLLECTOR CURRENT (mA)
0
20 30 50 100 200 500
0.4
0.8
0.6
V, VOLTAGE (VOLTS)
0.2
300
TJ = 25°CVBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
Figure 1. Power Temperature Derating Figure 2. “On” Voltages
60 100 140
IC/IB = 5.0
Figure 3. MJE340
1.0
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.5
0.01 50 100
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT TC = 25°C
SINGLE PULSE
I
C,
COLLECTOR
CURRENT
(AMP)
dc
10 ms
0.3
0.05
20 30
1.0ms
200 300
0.2
70
0.1
0.03
0.02
TJ = 150°C500 ms
ACTIVE−REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.The data of Figure 3 is
based on TJ(pk) = 150_C; TC is variable depending on
conditions. Second breakdown pulse limits are valid for
duty cycles to 10% provided TJ(pk) v 150_C. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
MJE340
http://onsemi.com
3
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN, NORMALIZED
7.0
10
0.02 0.03 0.1 4.00.01
1.0
0.7
0.5
0.1
0.05 0.3 0.50.2
150°CTJ = 25°C
−55 °C
Figure 4. DC Current Gain Figure 5. “On” Voltage
2.0
IC, COLLECTOR CURRENT (AMP)
1.6
0.4
0
TJ = 25°C
VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1.0 V
5.0
0.3
0.2
1.2
0.8
t, TIME OR PULSE WIDTH (ms)
0.01
0.01 0.03 1.0 2.0 5.0 10 20 50 100 2000.1 0.50.2
1.0
0.2
0.1
0.05
r(t), EFFECTIVE TRANSIENT
qJC(t) = r(t) qJC
qJC = 3.12°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
THERMAL RESISTANCE (NORMALIZED)
Figure 6. Thermal Response
0.5 D = 0.5
0.1
0.01
0.3
0.7
0.07
0.03
0.02
3.0
2.0
1.0 3.02.0
VCE = 1.0 Vdc
VCE(sat) @ IC/IB = 10
0.01 0.02 0.05 4.00.005 0.03 0.2 0.30.1 0.5 2.0 3.01.0
0.02 0.05 0.3 3.0 500 1000
0.02
0.05
0.2
IC, COLLECTOR CURRENT (mAdc)
hFE, DC CURRENT GAIN
TJ = 150°C
+25 °C
VCE = 10 V
VCE = 2.0 V
−55 °C
Figure 7. DC Current Gain
300
10
200
100
1.0 2.0 3.0 5.0 10 20 30 500
70
50
7.0 50 70 100 200 300
+100°C
30
20
MJE340
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
−B−
−A− M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 −−− 1.02 −−−
__
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its of ficers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Phone: 81−3−5773−3850
MJE340/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
