CD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
Features
■ RoHS compliant*
■ Reverse voltage from 20 to 60 V
■ Forward current of 2 A
■ High current capability
■ For use in low voltage high frequency
inverters, free wheeling and polarity protec-
tion applications
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer PCB
real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 2 A with a
choice of repetitive peak reverse voltage of 20 V up to 60 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration
minimizes roll away.
Parameter Symbol CD214B- Unit
B220 B230 B240 B250 B260
Forward Voltage (Max.) VF 0.5 0.5 0.5 0.7 0.7 V
(If = 2 A)
Typical Junction CT 200 pF
Capacitance*
Reverse Current (Max.) IR 0.5 0.5 0.5 0.5 0.5 mA
(at Rated VR )
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter Symbol CD214B- Unit
B220 B230 B240 B250 B260
Repetitive Peak VRRM 20 30 40 50 60 V
Reverse Voltage
Reverse Voltage VR 20 30 40 50 60 V
Maximum RMS Voltage VRMS 14 21 28 35 42 V
Avg. Forward Current IO 2 A
Forward Current,
Surge Peak Isurge 50 50 50 50 50 A
(60 Hz, 1 cycle)
Typical Thermal RΘJL 15 15 15 15 15 °C/W
Resistance**
Storage Temperature TSTG -55 to +150 °C
Junction Temperature TJ -55 to +125 °C
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
** Thermal resistance junction to lead.
*RoHS COMPLIANT
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
CD214B-B220 ...................................................................... 220
CD214B-B230 ...................................................................... 230
CD214B-B240 ...................................................................... 240
CD214B-B250 ...................................................................... 250
CD214B-B260 ...................................................................... 260
CD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
Product Dimensions Recommended Pad Layout
Physical Specifications
Typical Part Marking
Case ............................................................................ Molded plastic
Polarity .................................................... Indicated by cathode band
Weight ................................................... 0.003 ounces / 0.093 grams
Dimension SMB (DO-214AA)
A 4.06 - 4.57
(0.160 - 0.180)
B 3.30 - 3.94
(0.130 - 0.155)
C 1.96 - 2.21
(0.078 - 0.087)
D 0.15 - 0.31
(0.006 - 0.112)
E 5.21 - 5.59
(0.205 - 0.220)
F 0.05 - 0.20
(0.002 - 0.008)
G 2.01 - 2.62
(0.080 - 0.103)
H 0.76 - 1.52
(0.030 - 0.060)
How To Order
CD 214B - B 2 30 LF
Common Code
Chip Diode
Package
• 214B = SMB/DO-214AA
Model
B = Schottky Barrier Series
Average Forward Current (Io) Code
2 = 2 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
20 = 20 V
30 = 30 V
40 = 40 V
50 = 50 V
60 = 60 V
Terminations
LF = 100 % Sn (RoHS Compliant)
A
C
B
Dimension SMA (DO-214AC)
A2.90
(0.114)
B3.00
(0.118)
C2.30
(0.091)
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
B
G
F D
C
H
E
A
DIMENSIONS: MM
(INCHES)
DIMENSIONS: MM
(INCHES)
CD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves
Forward Current Derating Curve Maximum Non-Repetitive Surge Current
Typical Forward Characteristics Typical Junction Capacitance
Typical Reverse Characteristics
3.50
2.00
1.50
1.00
0.50
0.00
25 50 75 100 125 150 175
Average Forward Current (Amps)
Lead Temperature (°C)
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
60
40
50
30
20
10
0
12 5 10 20 50 100
Peak Forward Surge Current (Amps)
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
10
1.0
0.1
.01
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Current (Amps)
Instantaneous Forward Voltage (Volts)
Ta = 25 °C
Pulsewidth: 300 µs
B250 to B260
B220 to B240
1000
100
0
0.1 4.0 10.01.0 100
Capacitance (pF)
Reverse Voltage (Volts)
F = 1 MHz
TJ = 25 °C
0.01
0.1
1.0
10
100
0.001
020
40 60 80 100 120 140
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
Ta = 100 °C
Ta = 25 °C
Ta = 125 °C
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
.......
.......
....... ..............
....... ..............
P A
F
ET
120 °
D2
DD
1
W1
C
Index Hole
P
0
P
1
W
B
10 pitches (min.)
Direction of Feed
10 pitches (min.)
End
Trailer Device Leader
Start
d
CD214B-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
Packaging Information
Item Symbol SMB (DO-214AA)
Carrier Width A 4.94 ± 0.10
(0.194 ± 0.004)
Carrier Length B 5.57 ± 0.10
(0.219 ± 0.004)
Carrier Depth C 2.36 ± 0.10
(0.093 ± 0.004)
Sprocket Hole d 1.55 ± 0.05
(0.061 ± 0.002)
Reel Outside Diameter D 330
(12.992)
Reel Inner Diameter D1
50.0 MIN.
(1.969)
Feed Hole Diameter D2
13.0 ± 0.20
(0.512 ± 0.008)
Sprocket Hole Position E 1.75 ± 0.10
(0.069 ± 0.004))
Punch Hole Position F 5.50 ± 0.05
(0.217 ± 0.002)
Punch Hole Pitch P 4.00 ± 0.10
(0.157 ± 0.004)
Sprocket Hole Pitch P0
4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center P1
2.00 ± 0.05
(0.079 ± 0.002)
Overall Tape Thickness T 0.30 ± 0.10
(0.012 ± 0.004)
Tape Width W 12.00 ± 0.20
(0.472 ± 0.008)
Reel Width W1
18.4 MAX.
(0.724)
Quantity per Reel -- 3,000
Specifi cations are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specifi c applications.
REV. 09/15
The product will be dispensed in Tape and Reel format (see diagram below).
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
DIMENSIONS: MM
(INCHES)
