BUL510
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■STMicroelec tronic s PREF ERRE D
SALESTYPE
■NPN TRANSISTOR
■HIGH VOLTAGE CAPABILITY
■LOW SPREAD OF DYNAMIC PARAMETERS
■VERY HIGH SWITCHING SPEED
■FULLY CHAR ACTE RIZED AT 125oC
APPLICATIONS
■ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■SWI TCH MO DE P OW ER SUP P LIE S
■ELECTRONIC TRANSFORMER FOR
HA LO GEN LAM P
DESCRIPTION
The BUL510 is manufactured using high voltage
Multiepitaxial Mesa technology for cost-effective
high performance. It uses a Hollow Emitter
struct ure to enhance switc hing speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
®
INTERNAL SCHEMATIC DIAG RAM
February 2003
A BSO LUT E MAX IMU M RAT IN GS
Symbol Parameter Value Unit
VCES Collector-Emitter Voltage (VBE = 0) 1000 V
VCEO Collector-Emitter Voltage (IB = 0) 450 V
VEBO Emitter-Base Voltage (IC = 0) 9 V
ICCollector Current 10 A
ICM Collector Peak Current (tp < 5 ms) 18 A
IBBase Current 3.5 A
IBM Base Peak Current (tp < 5 ms) 7 A
Ptot Total Dissipation at Tc = 25 oC 100 W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
123
TO-220
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-Case Max
Thermal Resistance Junction-Ambient Max 1.25
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTI CS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ICES Collector Cut-off
Current (VBE = 0) VCE = 1000 V
VCE = 1000 V Tc = 125 oC100
500 µA
µA
ICEO Collector Cut-off
Current (IB = 0) VCE = 450 V 250 µA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA L = 25 mH 450 V
VEBO Emitter-Base Voltage
(IC = 0) IE = 10 mA 9 V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 3 A IB = 0.6 A
IC = 4 A IB = 0.8 A
IC = 5 A IB = 1.25 A
0.8
1
1.5
V
V
V
VBE(sat)∗Base-Emitter
Saturation Voltage IC = 3 A IB = 0.6 A
IC = 5 A IB = 1.25 A 1.2
1.5 V
V
hFE∗DC Current Gain IC = 1 A VCE = 5 V
IC = 10 mA VCE = 5 V 15
10 45
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 4 A VCL = 300 V
IB1 = 0.8 A IB2 = -1.6 A
L = 200 µH2.2
80 3.4
150 µs
ns
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 4 A VCL = 300 V
IB1 = 0.8 A IB2 = -1.6 A
L = 200 µH Tc = 125 oC3
120 µs
ns
∗ P ulsed: P ulse durati on = 300 µs, duty cycle 1.5 %
Safe O perat ing Areas Derating Curve
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DC Current Gai n
C ollec tor E mit ter Sat uration Volt ag e
Induct ive Fall T ime
DC Current Gain
Base Em itt er Saturation Voltage
Inductive Storage Time
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(1 ) Fast elec tronic switch
(2) Non-inductive Resist o r
(3 ) Fast recov e ry rect if i er
Reverse Bias e d SOA RBSOA and Inductive Load Switching Test
Circuits
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.40 0.645
L4 13.00 14.00 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.260
L9 3.50 3.93 0.137 0.154
M 2.60 0.102
DIA. 3.75 3.85 0.147 0.151
P011CI
TO-220 MECHANICAL DATA
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of use of such inform ation nor for any infringe ment o f patents or other rig hts o f th ird par ties wh ich may resul t fro m its u se. N o li cen se i s
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subject t o cha nge without notice. This publication supersedes and r eplaces all information previously supplie d. STMicroelectronics pr oducts
ar e not aut horized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
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