MICROWAVE POWER GaAs FET TIM3742-4SL-341 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 25.5dBm Single Carrier Level HIGH POWER P1dB=36.5dBm at 3.3GHz to 3.6GHz HIGH GAIN G1dB=10.0dB at 3.3GHz to 3.6GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL P1dB Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise add G1dB IDS1 ( Ta= 25C ) CONDITIONS VDS= 10V f= 3.3 to 3.6GHz G IM3 Two-Tone Test Po=25.5dBm IDS2 Tch (Single Carrier Level) (VDS X IDS + Pin - P1dB) UNIT dBm MIN. 35.5 TYP. MAX. 36.5 dB 10.0 A 1.1 1.3 dB % dBc -42 37 -45 0.6 A C 1.1 1.3 80 UNIT mS MIN. MAX. TYP. 900 V -1.0 -2.5 -4.0 A 2.6 V -5 C/W 4.5 6.5 X Rth(c-c) Recommended Gate Resistance(Rg): 150 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Saturated Drain Current IDSS Gate-Source Breakdown Voltage Thermal Resistance VGSO CONDITIONS VDS= 3V IDS= 1.5A VDS= 3V IDS= 15mA VDS= 3V VGS= 0V IGS= -50A Rth(c-c) Channel to Case Pinch-off Voltage SYMBOL ( Ta= 25C ) gm VGSoff The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul., 2006 TIM3742-4SL-341 ABSOLUTE MAXIMUM RATINGS ( Ta= 25C ) CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 3.5 Total Power Dissipation (Tc= 25 C) PT W 23.1 Channel Temperature Tch C 175 Storage Temperature Tstg C -65 to +175 PACKAGE OUTLINE (2-11D1B) Unit in mm c Gate d Source e Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM3472-4SL-341 RF PERFORMANCE Output Power (Pout) vs. Frequency VDS=10V Pout(dBm) IDS1.1A Pin=25.5dBm 37 36 35 34 3.3 3.4 3.5 3.6 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 39 freq.=3.6GHz 38 VDS=10V IDS1.1A 80 Pout 36 70 35 60 34 50 33 40 add 32 30 31 20 30 10 20 22 24 26 Pin (dBm) 3 28 30 add (%) Pout (dBm) 37 TIM3472-4SL-341 POWER DISSIPATION TEMPERATURE Power DissipationVS. vs.CASE Case Temperature 30 25 PT (W) PT(W) 20 15 10 5 0 0 40 80 120 160 200 Tc () Tc(C) IM3 vs. Output Power Characteristics -10 VDS= 10 V IDS1.1A freq.= 3.6GHz f= 5MHz -20 IM3 (dBc) -30 IM 3 -40 -50 -60 21 23 25 27 Po(dBm)@ Single Carrier Level 4 29 31