MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR
TIM3742-4SL-341
TECHNICAL DATA
FEATURES
LOW INTERMODULATION DIST ORTION HIGH GAIN
IM3=-45 dBc at Pout= 25.5dBm G1dB=10.0dB at 3.3GHz to 3.6GHz
Single Carrier Level BROAD BAND INTERNALLY MATCHED FET
HIGH POWER HERMETICALLY SEALED PACKAGE
P1dB=36.5dBm at 3.3GHz to 3.6GHz
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Output Power at 1dB Gain
Compression Point P1dB dBm 35.5 36.5 ⎯
Power Gain at 1dB Gain
Compression Point G1dB dB 10.0 ⎯ ⎯
Drain Current IDS1 A ⎯ 1.1 1.3
Gain Flatness ΔG dB ⎯ ⎯ ±0.6
Power Added Efficiency ηadd
VDS= 10V
f= 3.3 to 3.6GHz
% ⎯ 37 ⎯
3
rd Order Intermodulation
Distortion IM3 dBc -42 -45
⎯
Drain Current IDS2
Two-Tone Test
Po=25.5dBm
(Single Carrier Level) A ⎯ 1.1 1.3
Channel Temperature Rise ΔTch (VDS X IDS + Pin – P1dB)
X Rth(c-c) °C ⎯ ⎯ 80
Recommended Gate Resistance(Rg): 150 Ω (Max.)
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX.
Transconductance gm V
DS= 3V
I
DS= 1.5A mS ⎯ 900 ⎯
Pinch-off Voltage VGSoff V
DS= 3V
I
DS= 15mA V -1.0 -2.5 -4.0
Saturated Drain Current IDSS V
DS= 3V
V
GS= 0V A ⎯ 2.6 ⎯
Gate-Source Breakdown
Voltage VGSO I
GS= -50μA V -5
⎯ ⎯
Thermal Resistance Rth(c-c) Channel to Case °C/W ⎯ 4.5 6.5
The information contained herein is presented only as a guide for the applications of our products. No responsibility is
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA
before proceeding with design of equipment incorporating this product.
Rev. Jul., 2006
2
TIM3742-4SL-341
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
CHARACTERISTICS SYMBOL UNIT RATING
Drain-Source Voltage VDS V 15
Gate-Source Voltage VGS V -5
Drain Current IDS A 3.5
Total Power Dissipation (Tc= 25 °C) PT W 23.1
Channel Temperature Tch °C 175
Storage Temperature Tstg °C -65 to +175
PACKAGE OUTLINE (2-11D1B)
Unit in mm
c Gate
d Source
e Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds
at 260°C.
3
TIM3472-4SL-341
RF PERFORMANCE
VDS=10V
IDS≅1.1A
Pin=25.5dBm
37
36
35
34
3.3 3.4 3.5 3.6
Frequency(GHz)
Output Power(Pout) vs. Input Power(Pin)
freq.=3.6GHz
VDS=10V
IDS≅1.1A
Pout
ηadd
Pout(dBm)
Output Power (Pout) vs. Frequency
Pout (dBm)
ηadd (%)
39
38
37
36
35
34
33
32
31
30
80
70
60
50
40
30
20
10
20 22 24 26 28 30
Pin (dBm)
4
TIM3472-4SL-341
POWER DISSIPATION VS. CASE TEMPERATURE
0
5
10
15
20
25
30
0 40 80 120 160 200
Tc (℃)
PT (W)
Power Dissipation vs. Case Temperature
Tc(°C)
PT(W)
-60
-50
-40
-30
-20
-10
21 23
IM3 vs. Out
p
ut Power Characteristics
V
DS= 10
V
IDS≅1.1A
freq.= 3.6GHz
Δf= 5MHz
25 27 29 31
IM
3
IM3 (dBc)
Po(dBm)@ Single Carrier Level
