7 HIGH OUTPUT INFRARED EMITTERS = 880 nmTO46 PACKAGE THREE-FIVE SYSTEMS. INC. TEMT88F/88P/88XX SERIES PACKAGE OUTLINES FEATURES 0.178 - 0.188 < ot 0.480 - 0 198 = nn . . __.- i (45-48) > (46-48) @ GaAlAs heterostructure material. Emits at 880nm t 0223-0257 ore 921 m Super High Conversion Efficiency/Maximum ee 0028 vinx, 7 88) 49-54) power output - ~ ai | tt $4. f @ 2X Total Radiant Power output of 940nm product [ou DIMENSIONS: oo one m@ Increased coupling efficiency to Silicon photo- MAX, INCHES MAX, transistors (Millimeters) m TO46 Hermetic Package 1.000 1.000 Bal (esa) = Two Beam angles available GATHODE LEAD CATHODE LEAD Narrow 10 half angle Dome Lens Wide 32.5 half angle Flat Lens pia. ryp.2019 _, |e: 0.035 - 0.947 DIA. TYP gan lee 0.035 - 0.947 _ (08) / (09-12) (03) (9-12) oor LLY Ae aes vam | 21s , \ es . APPLICATIONS oor (08- 1.1) es) (08-11) . v + WN @ Disk Drives Photoelectric Controls 2252 non, 2 voy m Tape Drives m Slotted Switches 2202 21 oy m@ Printers = Reflective Switches : = TEMT88F TEMT88P, TEMT8830, TEMT8850 Optical Encoders m Intrusion Alarms = Remote Actuators a Smoke Detectors io TYPICAL eye ~ : ee 2 860nm GaAtAs o "I 3 940m GaAs i @ #80 4 700nm GaP 7 = _ - - | \ DESCRIPTION 3 a S The 880nm wavelength 2 , Ny significantly improves The TEMT88F/88P/88XX series is Gallium Aluminum z ia \ | the coupling efficiency Arsenide high output infrared emitting diodes in TO46 . aN VA Pee phototran- hermetic packages. They emit non-coherent, infrared \ energy at 880nm and provide significantly improved coupling efficiency to silicon phototransistors. These / devices are constructed with (LPE) solution grown diodes 500 700 800 300 1000 for the highest conversion efficiency and long, useful WAVELENGTH IN NANOMETERS operating life span. Spectral Matching Comparison TOTAL RADIANT OUTPUT POWER ABSOLUTE MAXIMUM RATINGS Part Number Minimum Output Half Angle TEMT88FA 7.0mW @ 100mA 32.5 Average Power Dissipation: 200mW TEMT88FB 9.0mW @ 100mA 32,5 Derate Linearly from 25C: -1.6mW/C TEMT88FC 10.5mW @ 100mA 32.5 Average Forward Current: 100mA TEMT88FD 12.0mW @ 100mA 32.5 Reverse Voltage: 3.0V TEMT88PA 7.0mW @ 100mA 10" Operating & Storage Temp.: -65 to +125C TEMT88PB 9.0mW @ 100mA 10 Soldering Time @ 260C TEMT88PC 10.5mW @ 100mA 10 1/16" From Case: 5 seconds TEMT88PD 12.0mW @ 100mA 10 Peak Pulse Current TEMT8830 30mW/SR @ 100mA 710 ; 100usec Pulse, 10pps: 3.0A TEMT8850 50mW/SR @ 100mA 10 qs THREE-FIVE SYSTEMS, INC. Optoelectronics Group Zam TEL: 602-496-0035; TWX: 510-601-1436; FAX: 602-496-0168 Form IE 1105 HIGH OUTPUT INFRARED EMITTERS 880 nmT046 PACKAGE TEMT88F/88P/88XX SERIES ELECTRO-OPTICAL CHARACTERISTICS Symbol Parameter Conditions (TA = 25C) Min. Typ. Max. Units APo/AT | Temp. Coef. of Power Output lr = 100mA -0.53 %/C AV-/AT | Temp. Coef. of Forward Voltage le = 100mA -18 mV/C Ve Forward Voltage lr = 100mA 1.6 1.9 Vv Ra Dynamic Resistance le = 100mA 1.2 Q 0% Half Angie Between Half Radiant Intensity Points TEMT88P, TEMT8830/50 10 Deg. TEMT88F 32.5 Deg. A peak Peak Wavelength le = 100mA 880 nm AA Line Halfwidth lp = 100mA 80 nm In Reverse Current Va = -3.0V 10 HA t Rise Time 06 usec ty Fall Time 0.75 usec Typical off-axis angle at which the radiant intensity is half the axial radiant intensity. TYPICAL CHARACTERISTICS 80 0 30 bE Pulse = 1 5 40 a Ta = 25 3 20 = 10usec, 100Hz n = 25C Ke 10 5 Fi 2 5 Ised 5 a 60 = 20 > 40 z Zz > = s - 20 > > < a Ww 40 T 06 - 0.4 to \ 01 02 04 06 07 02 0406 10 20 O02 006 01 02 05 0102 0.5 10 20 40 0 40 80 120 160 le IN AMPS lr IN AMPS TEMPERATURE, C IF versus Normalized Power Out Forward Voltage versus IF Forward Voltage versus Temperature 10 100 D 60 F 90 TEMTB8P, = 40 5 80 TEMT8830, g 4 < a TEMT88F TEMT8850 5 5 70 a 0 x c aa 3 Ws 5 = Wl & = L230 Oo. 20Hz Rep Rate iE 4 < 2 i a uw Wi 10 a4 0 1 10 10 or 40% -20 0 20 40 60 PULSE WIDTH (SECONDS) ANGULAR DISPLACEMENT FROM OPTICAL AXIS Max. Peak Pulse Current versus Pulse Width Typical Radiation Pattern q. THREE-FIVE SYSTEMS, INC, Optoelectronics Group tm TEL: 602-496-0035; TWX: 510-601-1436; FAX: 602-496-0168 Form IE 1105 3/88 Copyright 3/88 THREE-! FIVE SYSTEMS, INC. reserves the right to change electrical and mechanical characteristics as specified herein. Printed in U.S.A. a