Supertex inc.
Supertex inc.
www.supertex.com
Doc.# DSFP-VP2206
E082313
VP2206
P-Channel Enhancement-Mode
Vertical DMOS FET
YY = Year Sealed
WW = Week Sealed
VP
2206N2
YYWW
Features
►Free from secondary breakdown
►Low power drive requirement
►Ease of paralleling
►Low CISS and fast switching speeds
►High input impedance and high gain
►Excellent thermal stability
►Integral source-to-drain diode
Applications
►Motor controls
►Converters, ampliers, and switches
►Power supply circuits
►Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
General Description
The Supertex VP2206 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure and
Supertex’s well-proven silicon-gate manufacturing process.
This combination produces a device with the power handling
capabilities of bipolar transistors, and the high input
impedance and positive temperature coefcient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiVP
2206
YYWW
TO-39
GATE
SOURCE
DRAIN
TO-39
Package may or may not include the following marks: Si or
GATE
SOURCE
DRAIN
TO-92
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSS
Drain-to-gate voltage BVDGS
Gate-to-source voltage ±20V
Operating and storage temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
TO-92
Product Marking
Pin Conguration
Package may or may not include the following marks: Si or
Ordering Information
Part Number Package
Option Packing
VP2206N2-G TO-39 500/Bag
VP2206N3-G TO-92 1000/Bag
VP2206N3-G P002
TO-92 2000/Reel
VP2206N3-G P003
VP2206N3-G P005
VP2206N3-G P013
VP2206N3-G P014
Product Summary
BVDSS/BVDGS
RDS(ON)
(max)
ID(ON)
(min)
-60V 0.9Ω-4.0A
Typical Thermal Resistance
Package θja
TO-39 N/A
TO-92 132OC/W
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.